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FDMS8020

Fairchild/ON Semiconductor FDMS8020

Part Number:
FDMS8020
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2483851-FDMS8020
Description:
MOSFET N-CH 30V 26A 8-PQFN
ECAD Model:
Datasheet:
FDMS8020

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Specifications
Fairchild/ON Semiconductor FDMS8020 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8020.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 day ago)
  • Factory Lead Time
    18 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    68.1mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • Published
    2010
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 65W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    65W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.5m Ω @ 26A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    3800pF @ 15V
  • Current - Continuous Drain (Id) @ 25°C
    26A Ta 42A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    61nC @ 10V
  • Rise Time
    5.7ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    4 ns
  • Turn-Off Delay Time
    32 ns
  • Continuous Drain Current (ID)
    26A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    42A
  • Drain-source On Resistance-Max
    0.0025Ohm
  • Drain to Source Breakdown Voltage
    30V
  • Avalanche Energy Rating (Eas)
    93 mJ
  • Height
    1.05mm
  • Length
    5mm
  • Width
    6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
FDMS8020 Description
The FDMS8020 N-Channel MOSFET has been specifically designed to improve overall efficiency and reduce switch node ringing in DC/DC converters utilizing either synchronous or traditional switching PWM controllers. It has been tuned for low gate charge, low RDS(on), quick switching speed, and reverse-recovery performance in body diodes.

FDMS8020 Features
Max rDS(on) = 2.5 mΩ at VGS = 10V, ID = 26 A
Max rDS(on) = 3.6 mΩ at VGS = 4.5V, ID = 21.5 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant

FDMS8020 Applications
Consumer

FDMS8020 More Descriptions
N-Channel PowerTrench® MOSFET 30V, 131A, 2.5mΩ
Power Field-Effect Transistor, 26A I(D), 30V, 0.0025ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(on), fast switching speed, and body diode reverse-recovery performance.
Product Comparison
The three parts on the right have similar specifications to FDMS8020.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Resistance
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Lead Free
    Reach Compliance Code
    Number of Channels
    Drain to Source Voltage (Vdss)
    View Compare
  • FDMS8020
    FDMS8020
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 day ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    260
    30
    R-PDSO-F5
    1
    2.5W Ta 65W Tc
    Single
    ENHANCEMENT MODE
    65W
    DRAIN
    12 ns
    N-Channel
    SWITCHING
    2.5m Ω @ 26A, 10V
    3V @ 250μA
    3800pF @ 15V
    26A Ta 42A Tc
    61nC @ 10V
    5.7ns
    4.5V 10V
    ±20V
    4 ns
    32 ns
    26A
    MO-240AA
    20V
    42A
    0.0025Ohm
    30V
    93 mJ
    1.05mm
    5mm
    6mm
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7660
    FDMS7660
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2007
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    -
    -
    R-PDSO-N5
    1
    2.5W Ta 78W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 25A, 10V
    3V @ 250μA
    5565pF @ 15V
    25A Ta 42A Tc
    84nC @ 10V
    9ns
    4.5V 10V
    ±20V
    7 ns
    37 ns
    25A
    MO-240AA
    20V
    -
    -
    30V
    -
    1.05mm
    5mm
    6mm
    No
    ROHS3 Compliant
    2.8MOhm
    1.9V
    1.9 V
    No SVHC
    Lead Free
    -
    -
    -
    FDMS8020 vs FDMS7660
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    260
    NOT SPECIFIED
    -
    -
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    -
    20V
    -
    -
    60V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    Lead Free
    not_compliant
    1
    -
    FDMS8020 vs FDMS86550ET60
  • FDMS8050ET30
    FDMS8050ET30
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2017
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    260
    NOT SPECIFIED
    -
    -
    3.3W Ta 180W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    Lead Free
    not_compliant
    -
    30V
    FDMS8020 vs FDMS8050ET30
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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