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FDMS86310

Fairchild/ON Semiconductor FDMS86310

Part Number:
FDMS86310
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849180-FDMS86310
Description:
MOSFET N-CH 80V 17A 8-PQFN
ECAD Model:
Datasheet:
FDMS86310

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Specifications
Fairchild/ON Semiconductor FDMS86310 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86310.
  • Lifecycle Status
    ACTIVE (Last Updated: 2 days ago)
  • Factory Lead Time
    13 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    68.1mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    2.5W Ta 96W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    96W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    28 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    4.8m Ω @ 17A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    6290pF @ 40V
  • Current - Continuous Drain (Id) @ 25°C
    17A Ta 50A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    95nC @ 10V
  • Rise Time
    23ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    9 ns
  • Turn-Off Delay Time
    35 ns
  • Continuous Drain Current (ID)
    17A
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    50A
  • Drain to Source Breakdown Voltage
    80V
  • Height
    1.05mm
  • Length
    5.1mm
  • Width
    5.85mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS86310 Description     This N-channel MOSFET FDMS86310 is designed to improve the overall efficiency of DC/DC converters using synchronous or conventional switching PWM controllers and to minimize switch node ringing, and is optimized for low gate charge, low rDS (conduction), fast switching speed and body diode reverse recovery performance.   FDMS86310 Features   Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A Advanced Package and Silicon combination for low rDS(on) and high efficiency Next generation enhanced body diode technology, engineered for soft recovery MSL1 robust package design 100% UIL tested RoHS Compliant   FDMS86310 Applications DC-DC Merchant Power Supply    

FDMS86310 More Descriptions
Trans MOSFET N-CH Si 80V 17A 8-Pin PQFN EP T/R / MOSFET N-CH 80V 17A 8-PQFN
Power Field-Effect Transistor, 17A I(D), 80V, 0.0048ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charge, low rDS(on), fast switching speed and bodydiode reverse recovery performance.
Product Comparison
The three parts on the right have similar specifications to FDMS86310.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Published
    Resistance
    Threshold Voltage
    Nominal Vgs
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Drain to Source Voltage (Vdss)
    Contact Plating
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    2.5W Ta 96W Tc
    Single
    ENHANCEMENT MODE
    96W
    DRAIN
    28 ns
    N-Channel
    SWITCHING
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    MO-240AA
    20V
    50A
    80V
    1.05mm
    5.1mm
    5.85mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7660
    FDMS7660
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    -
    R-PDSO-N5
    1
    2.5W Ta 78W Tc
    Single
    ENHANCEMENT MODE
    2.5W
    DRAIN
    17 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 25A, 10V
    3V @ 250μA
    5565pF @ 15V
    25A Ta 42A Tc
    84nC @ 10V
    9ns
    4.5V 10V
    ±20V
    7 ns
    37 ns
    25A
    MO-240AA
    20V
    -
    30V
    1.05mm
    5mm
    6mm
    No
    ROHS3 Compliant
    Lead Free
    2007
    2.8MOhm
    1.9V
    1.9 V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    FDMS86310 vs FDMS7660
  • FDMS8050ET30
    FDMS8050ET30
    Fairchild/ON Semiconductor
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 180W Tc
    Single
    -
    -
    -
    -
    N-Channel
    -
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    2017
    -
    -
    -
    -
    260
    not_compliant
    NOT SPECIFIED
    30V
    -
    -
    -
    -
    FDMS86310 vs FDMS8050ET30
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    MO-240AA
    20V
    22A
    30V
    1mm
    6mm
    5mm
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    Tin
    0.005Ohm
    100A
    33 mJ
    FDMS86310 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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