Fairchild/ON Semiconductor FDMS7672AS

Name: FDMS7672AS
Brand: Fairchild/ON Semiconductor
SKU: 2849849-FDMS7672AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS7672AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849849-FDMS7672AS

Description:: MOSFET N-CH 30V SYNCFET POWER56

ECAD Model:

Datasheet:: FDMS7672AS

Part Pictures

Specifications

Fairchild/ON Semiconductor FDMS7672AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7672AS.

Lifecycle Status
ACTIVE (Last Updated: 3 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
3.5MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
R-XDSO-N5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 46W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
45W
Case Connection
DRAIN
Turn On Delay Time
12 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
4m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
2820pF @ 15V
Current - Continuous Drain (Id) @ 25°C
19A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
46nC @ 10V
Rise Time
5ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
4 ns
Turn-Off Delay Time
28 ns
Continuous Drain Current (ID)
42A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
90A
Avalanche Energy Rating (Eas)
60 mJ
Nominal Vgs
1.9 V
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS7672AS Description
The FDMS7672AS was created with the goal of reducing power conversion losses. The lowest RDS(on) while maintaining great switching performance has been achieved by combining advances in both semiconductor and packaging technology. This device also has a monolithic Schottky body diode, which is very efficient.

FDMS7672AS Features 100% UIL tested
RoHS Compliant
MSL1 robust package design
SyncFET Schottky Body Diode
Max rDS(on) = 4.0 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 4.5 mΩ at VGS = 7 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency

FDMS7672AS Applications
Telecom secondary side rectification
Notebook Vcore/GPU low-side switch
Networking Point of Load low-side switch
Synchronous Rectifier for DC/DC Converters

FDMS7672AS More Descriptions

Trans MOSFET N-CH Si 30V 19A 8-Pin PQFN EP T/R
The FDMS7672AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic Schottky body diode.
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0032ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:46W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMS7672AS.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain to Source Voltage (Vdss)

Published

Terminal Form

Threshold Voltage

JEDEC-95 Code

FET Feature

View Compare
FDMS7672AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

18 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e3

yes

Active

1 (Unlimited)

5

EAR99

3.5MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-XDSO-N5

1

2.5W Ta 46W Tc

Single

ENHANCEMENT MODE

45W

DRAIN

12 ns

N-Channel

SWITCHING

4m Ω @ 18A, 10V

3V @ 1mA

2820pF @ 15V

19A Ta 42A Tc

46nC @ 10V

5ns

4.5V 10V

±20V

4 ns

28 ns

42A

20V

30V

90A

60 mJ

1.9 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-
FDMS8350LET40

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 1 week ago)

12 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

-

EAR99

-

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

-

3.33W Ta 125W Tc

Single

-

-

-

-

N-Channel

-

0.85m Ω @ 47A, 10V

3V @ 250μA

16590pF @ 20V

49A Ta 300A Tc

219nC @ 10V

-

4.5V 10V

±20V

-

-

300A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

260

not_compliant

NOT SPECIFIED

40V

-

-

-

-

-

FDMS7672AS vs FDMS8350LET40
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-F5

1

3.3W Ta 59W Tc

Single

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

12V

25V

100A

45 mJ

-

-

-

-

No SVHC

No

RoHS Compliant

-

-

-

-

-

2017

FLAT

1.5V

MO-240AA

Schottky Diode (Body)

FDMS7672AS vs FDMS8570SDC
FDMS8050ET30

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Not For New Designs

1 (Unlimited)

-

EAR99

-

Tin (Sn)

-

MOSFET (Metal Oxide)

-

-

-

3.3W Ta 180W Tc

Single

-

-

-

-

N-Channel

-

0.65m Ω @ 55A, 10V

3V @ 750μA

22610pF @ 15V

55A Ta 423A Tc

285nC @ 10V

-

4.5V 10V

±20V

-

-

423A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

Lead Free

260

not_compliant

NOT SPECIFIED

30V

2017

-

-

-

-

FDMS7672AS vs FDMS8050ET30