Fairchild/ON Semiconductor FDMS7660

Name: FDMS7660
Brand: Fairchild/ON Semiconductor
SKU: 2849642-FDMS7660
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS7660

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849642-FDMS7660

Description:: MOSFET N-CH 30V 25A POWER56

ECAD Model:

Datasheet:: FDMS7660

Specifications

Fairchild/ON Semiconductor FDMS7660 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS7660.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
18 Weeks
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
68.1mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Published
2007
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Resistance
2.8MOhm
Terminal Finish
Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
JESD-30 Code
R-PDSO-N5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 78W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
2.5W
Case Connection
DRAIN
Turn On Delay Time
17 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2.8m Ω @ 25A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
5565pF @ 15V
Current - Continuous Drain (Id) @ 25°C
25A Ta 42A Tc
Gate Charge (Qg) (Max) @ Vgs
84nC @ 10V
Rise Time
9ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
7 ns
Turn-Off Delay Time
37 ns
Continuous Drain Current (ID)
25A
Threshold Voltage
1.9V
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Nominal Vgs
1.9 V
Height
1.05mm
Length
5mm
Width
6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

FDMS7660 Description
This N-Channel MOSFET was created with the goal of increasing overall efficiency and reducing switch node ringing in DC/DC converters with synchronous or traditional switching PWM controllers. Low gate charge, low rDS(on), quick switching speed, and body diode reverse recovery performance have all been tuned.

FDMS7660 Features
Max rDS(on) = 2.8 mΩ at VGS = 10 V, ID = 25 A
Max rDS(on) = 3.5 mΩ at VGS = 4.5 V, ID = 19 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
Next generation enhanced body diode technology, engineered for soft recovery. Provides Schottky-like performance with minimum EMI in sync buck converter applications
MSL1 robust package design
100% UIL tested
RoHS Compliant

FDMS7660 Applications
Power Management
Consumer Electronics
Portable Devices
Industrial

FDMS7660 More Descriptions

N-Channel 30 V 2.8 mOhm Surface Mount Power Trench Mosfet - Power 56
N-Channel 30V 25A (Ta), 42A (Tc) 2.5W (Ta), 78W (Tc) Surface Mount 8-PQFN (5x6)
Trans MOSFET N-CH 30V 25A 8-Pin PQFN T/R - Tape and Reel
N-Channel PowerTrench® MOSFET 30V, 2.8mΩ
Power Field-Effect Transistor, 25A I(D), 30V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low rDS(on, fast switching speed and body diode reverse recovery performance.
MOSFET, N CH, 30V, 42A, POWER56; Transistor Polarity:N Channel; Continuous Drain Current Id:42A; Drain Source Voltage Vds:30V; On Resistance Rds(on):0.0019ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.9V; Power Dissipation Pd:78W; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (19-Dec-2012)

Product Comparison

The three parts on the right have similar specifications to FDMS7660.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Terminal Position

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Terminal Form

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

FET Feature

Drain Current-Max (Abs) (ID)

Contact Plating

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Drain-source On Resistance-Max

View Compare
FDMS7660

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

2007

e3

yes

Active

1 (Unlimited)

5

EAR99

2.8MOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-N5

1

2.5W Ta 78W Tc

Single

ENHANCEMENT MODE

2.5W

DRAIN

17 ns

N-Channel

SWITCHING

2.8m Ω @ 25A, 10V

3V @ 250μA

5565pF @ 15V

25A Ta 42A Tc

84nC @ 10V

9ns

4.5V 10V

±20V

7 ns

37 ns

25A

1.9V

MO-240AA

20V

30V

1.9 V

1.05mm

5mm

6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-
FDMS8570SDC

Fairchild/ON Semiconductor

LAST SHIPMENTS (Last Updated: 1 week ago)

-

Surface Mount

Surface Mount

8-PowerTDFN

8

90mg

SILICON

-55°C~150°C TJ

Digi-Reel®

PowerTrench®, SyncFET™

2017

e3

yes

Obsolete

1 (Unlimited)

5

EAR99

-

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-F5

1

3.3W Ta 59W Tc

Single

ENHANCEMENT MODE

59W

DRAIN

11 ns

N-Channel

SWITCHING

2.8m Ω @ 28A, 10V

2.2V @ 1mA

2825pF @ 13V

28A Ta 60A Tc

42nC @ 10V

4ns

4.5V 10V

±12V

3 ns

33 ns

60A

1.5V

MO-240AA

12V

25V

-

-

-

-

No SVHC

No

RoHS Compliant

-

FLAT

100A

45 mJ

Schottky Diode (Body)

-

-

-

-

-

-

FDMS7660 vs FDMS8570SDC
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

-

e3

yes

Active

1 (Unlimited)

5

EAR99

-

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-F5

1

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

96W

DRAIN

28 ns

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

-

MO-240AA

20V

80V

-

1.05mm

5.1mm

5.85mm

-

No

ROHS3 Compliant

Lead Free

FLAT

-

-

-

50A

-

-

-

-

-

FDMS7660 vs FDMS86310
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

-

e3

yes

Active

1 (Unlimited)

5

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

R-PDSO-F5

1

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

-

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

-

MO-240AA

20V

30V

-

1mm

6mm

5mm

-

-

ROHS3 Compliant

-

FLAT

100A

33 mJ

-

22A

Tin

NOT SPECIFIED

not_compliant

NOT SPECIFIED

0.005Ohm

FDMS7660 vs FDMS0312AS