Fairchild/ON Semiconductor FDMS8050ET30
- Part Number:
- FDMS8050ET30
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849211-FDMS8050ET30
- Description:
- MOSFET N-CH 30V 55A 8-PQFN
- ECAD Model:
-
- Datasheet:
- FDMS8050ET30
Fairchild/ON Semiconductor FDMS8050ET30 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8050ET30.
- Lifecycle StatusACTIVE, NOT REC (Last Updated: 2 days ago)
- Factory Lead Time6 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight56.5mg
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Power Dissipation-Max3.3W Ta 180W Tc
- Element ConfigurationSingle
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs0.65m Ω @ 55A, 10V
- Vgs(th) (Max) @ Id3V @ 750μA
- Input Capacitance (Ciss) (Max) @ Vds22610pF @ 15V
- Current - Continuous Drain (Id) @ 25°C55A Ta 423A Tc
- Gate Charge (Qg) (Max) @ Vgs285nC @ 10V
- Drain to Source Voltage (Vdss)30V
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)423A
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS8050ET30 Description
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDs(on).
FDMS8050ET30 Features Extended Tj rating to 175*C Max Tps(on)= 0.65 mQ atVcs= 10V,lp= 55A Max Tps(on)= 0.9 mQatVcs=4.5V,lp=47 A Advanced Package and Silicon combination for low Ts(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant
FQPF33N10L Applications OringFET Synchronous Rectifier
FDMS8050ET30 Features Extended Tj rating to 175*C Max Tps(on)= 0.65 mQ atVcs= 10V,lp= 55A Max Tps(on)= 0.9 mQatVcs=4.5V,lp=47 A Advanced Package and Silicon combination for low Ts(on) and high efficiency MSL1 robust package design 100% UIL tested RoHS Compliant
FQPF33N10L Applications OringFET Synchronous Rectifier
FDMS8050ET30 More Descriptions
N-Channel PowerTrench® MOSFET 30V, 423A, 0.65mΩ
Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R - Tape and Reel
MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:423A; Source Voltage Vds:30V; On Resistance
Power Field-Effect Transistor, 423A I(D), 30V, 0.00065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 423A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 500µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 180W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
Trans MOSFET N-CH 30V 55A 8-Pin PQFN T/R - Tape and Reel
MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity:N Channel; Continuous Drain Current Id:423A; Source Voltage Vds:30V; On Resistance
Power Field-Effect Transistor, 423A I(D), 30V, 0.00065ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge and extremely low rDS(on).
MOSFET, N-CH, 30V, 423A, POWER 56-8; Transistor Polarity: N Channel; Continuous Drain Current Id: 423A; Drain Source Voltage Vds: 30V; On Resistance Rds(on): 500µohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 1.8V; Power Dissipation Pd: 180W; Transistor Case Style: Power 56; No. of Pins: 8Pins; Operating Temperature Max: 175°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: Lead (27-Jun-2018)
The three parts on the right have similar specifications to FDMS8050ET30.
-
ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Power Dissipation-MaxElement ConfigurationFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)RoHS StatusLead FreeTransistor Element MaterialNumber of TerminationsResistanceSubcategoryTerminal PositionJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionTurn On Delay TimeTransistor ApplicationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)Nominal VgsHeightLengthWidthREACH SVHCRadiation HardeningThreshold VoltageJEDEC-95 CodeView Compare
-
FDMS8050ET30ACTIVE, NOT REC (Last Updated: 2 days ago)6 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg-55°C~175°C TJTape & Reel (TR)PowerTrench®2017e3yesNot For New Designs1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)260not_compliantNOT SPECIFIED3.3W Ta 180W TcSingleN-Channel0.65m Ω @ 55A, 10V3V @ 750μA22610pF @ 15V55A Ta 423A Tc285nC @ 10V30V4.5V 10V±20V423AROHS3 CompliantLead Free---------------------------- -
ACTIVE (Last Updated: 1 week ago)12 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg-55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)260not_compliantNOT SPECIFIED3.33W Ta 125W TcSingleN-Channel0.85m Ω @ 47A, 10V3V @ 250μA16590pF @ 20V49A Ta 300A Tc219nC @ 10V40V4.5V 10V±20V300AROHS3 Compliant----------------------------
-
ACTIVE (Last Updated: 3 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mg-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™-e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)---2.5W Ta 46W TcSingleN-Channel4m Ω @ 18A, 10V3V @ 1mA2820pF @ 15V19A Ta 42A Tc46nC @ 10V-4.5V 10V±20V42AROHS3 CompliantLead FreeSILICON53.5MOhmFET General Purpose PowerDUALR-XDSO-N51ENHANCEMENT MODE45WDRAIN12 nsSWITCHING5ns4 ns28 ns20V30V90A60 mJ1.9 V1.05mm5mm6mmNo SVHCNo--
-
ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mg-55°C~150°C TJTape & Reel (TR)PowerTrench®2007e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)---2.5W Ta 78W TcSingleN-Channel2.8m Ω @ 25A, 10V3V @ 250μA5565pF @ 15V25A Ta 42A Tc84nC @ 10V-4.5V 10V±20V25AROHS3 CompliantLead FreeSILICON52.8MOhmFET General Purpose PowerDUALR-PDSO-N51ENHANCEMENT MODE2.5WDRAIN17 nsSWITCHING9ns7 ns37 ns20V30V--1.9 V1.05mm5mm6mmNo SVHCNo1.9VMO-240AA
Popular Search Part Number
Related Keywords
Search Tags
Latest News
-
19 September 2023
Comparison Between 2N3055 vs TIP3055
Ⅰ. Overview of 2N3055Ⅱ. Overview of TIP3055Ⅲ. Pin diagram comparisonⅣ. Technical parametersⅤ. Comparison of current amplification factorsⅥ. Package comparisonⅦ. Symbol of 2N3055 and TIP3055Ⅷ. Application scenarios comparisonⅨ. Can... -
19 September 2023
STM32F303CCT6 Microcontroller: Footprint, Equivalent and Advantages
Ⅰ. What is STM32F303CCT6?Ⅱ. 3D Model and footprint of STM32F303CCT6Ⅲ. Technical parametersⅣ. Features of STM32F303CCT6Ⅴ. Package and packaging of STM32F303CCT6Ⅵ. Typical and maximum current consumptionⅦ. Advantages of STM32F303CCT6... -
20 September 2023
ATMEGA8-16PU Microcontroller: Symbol, Equivalent and Electrical Characteristics
Ⅰ. Overview of ATMEGA8-16PUⅡ. Symbol, Footprint and Pin Configuration of ATMEGA8-16PUⅢ. Technical parametersⅣ. Electrical characteristics of ATMEGA8-16PUⅤ. What is the difference between ATMEGA8-16PU and ATMEGA8-16PI?Ⅵ. I/O Memory of... -
20 September 2023
The Pinout, Advantages, and Electrical Characteristics of AO4466
Ⅰ. What is AO4466?Ⅱ. Symbol, Pinout and Footprint of AO4466Ⅲ. Technical parametersⅣ. What are the advantages of AO4466?Ⅴ. Application fields of AO4466Ⅵ. Typical electrical characteristicsⅦ. How to detect...
Help you to save your cost and time.
Reliable package for your goods.
Fast Reliable Delivery to save time.
Quality premium after-sale service.