Fairchild/ON Semiconductor FDMS0312AS

Name: FDMS0312AS
Brand: Fairchild/ON Semiconductor
SKU: 2849178-FDMS0312AS
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS0312AS

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2849178-FDMS0312AS

Description:: MOSFET N-CH 30V 18A PT8

ECAD Model:

Datasheet:: FDMS0312AS

Specifications

Fairchild/ON Semiconductor FDMS0312AS technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS0312AS.

Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Factory Lead Time
26 Weeks
Contact Plating
Tin
Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Number of Pins
8
Weight
74mg
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®, SyncFET™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
FLAT
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
JESD-30 Code
R-PDSO-F5
Number of Elements
1
Power Dissipation-Max
2.5W Ta 36W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
Turn On Delay Time
10 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
5m Ω @ 18A, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds
1815pF @ 15V
Current - Continuous Drain (Id) @ 25°C
18A Ta 22A Tc
Gate Charge (Qg) (Max) @ Vgs
31nC @ 10V
Rise Time
2.3ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
6 ns
Turn-Off Delay Time
25 ns
Continuous Drain Current (ID)
18A
JEDEC-95 Code
MO-240AA
Gate to Source Voltage (Vgs)
20V
Drain Current-Max (Abs) (ID)
22A
Drain-source On Resistance-Max
0.005Ohm
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
100A
Avalanche Energy Rating (Eas)
33 mJ
Height
1mm
Length
6mm
Width
5mm
RoHS Status
ROHS3 Compliant

Description

FDMS0312AS Description
FDMS0312AS is N-Channel PowerTrench? SyncFET? manufactured by onsemi. The FDMS0312AS has been designed to minimize losses in power conversion applications. Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance. The onsemi FDMS0312AS has the added benefit of an efficient monolithic Schottky body diode.

FDMS0312AS Features
Max rDS(on) = 5.0 mΩ at VGS = 10 V, ID = 18 A
Max rDS(on) = 6.2 mΩ at VGS = 4.5 V, ID = 16 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
SyncFET Schottky Body Diode
MSL1 robust package design

FDMS0312AS Applications
Synchronous Rectifier for DC/DC Converters
Notebook Vcore/GPU low side switch
Networking Point of Load low side switch
Telecom secondary side rectification
Notebook PC

FDMS0312AS More Descriptions

RS422/RS485 Transceiver, 1 Driver, 1 Receiver, 4.5V to 5.5V Supply, SOIC-8
Power Field-Effect Transistor, 18A I(D), 30V, 0.005ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
The FDMS0312AS has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance.This device has the added benefit of an efficient monolithic Schottky body diode.

Product Comparison

The three parts on the right have similar specifications to FDMS0312AS.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Contact Plating

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Subcategory

Technology

Terminal Position

Terminal Form

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

JESD-30 Code

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Case Connection

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Height

Length

Width

RoHS Status

Published

Number of Channels

Terminal Finish

Drain to Source Voltage (Vdss)

Lead Free

Power Dissipation

Radiation Hardening

View Compare
FDMS0312AS

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

26 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

74mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®, SyncFET™

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-F5

1

2.5W Ta 36W Tc

Single

ENHANCEMENT MODE

DRAIN

10 ns

N-Channel

SWITCHING

5m Ω @ 18A, 10V

3V @ 1mA

1815pF @ 15V

18A Ta 22A Tc

31nC @ 10V

2.3ns

4.5V 10V

±20V

6 ns

25 ns

18A

MO-240AA

20V

22A

0.005Ohm

30V

100A

33 mJ

1mm

6mm

5mm

ROHS3 Compliant

-

-

-

-

-

-

-

-
FDMS86550

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Tin

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

NO LEAD

NOT SPECIFIED

not_compliant

NOT SPECIFIED

R-PDSO-N5

1

2.7W Ta 156W Tc

Single

ENHANCEMENT MODE

DRAIN

43 ns

N-Channel

SWITCHING

1.65m Ω @ 32A, 10V

4.5V @ 250μA

11530pF @ 30V

32A Ta 155A Tc

154nC @ 10V

27ns

8V 10V

±20V

11 ns

42 ns

155A

MO-240AA

20V

32A

-

60V

320A

937 mJ

1.05mm

5.1mm

6.25mm

ROHS3 Compliant

2010

1

-

-

-

-

-

FDMS0312AS vs FDMS86550
FDMS8050ET30

Fairchild/ON Semiconductor

ACTIVE, NOT REC (Last Updated: 2 days ago)

6 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

56.5mg

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Not For New Designs

1 (Unlimited)

-

EAR99

-

MOSFET (Metal Oxide)

-

-

260

not_compliant

NOT SPECIFIED

-

-

3.3W Ta 180W Tc

Single

-

-

-

N-Channel

-

0.65m Ω @ 55A, 10V

3V @ 750μA

22610pF @ 15V

55A Ta 423A Tc

285nC @ 10V

-

4.5V 10V

±20V

-

-

423A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

2017

-

Tin (Sn)

30V

Lead Free

-

-

FDMS0312AS vs FDMS8050ET30
FDMS86310

Fairchild/ON Semiconductor

ACTIVE (Last Updated: 2 days ago)

13 Weeks

-

Surface Mount

Surface Mount

8-PowerTDFN

8

68.1mg

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

e3

yes

Active

1 (Unlimited)

5

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

DUAL

FLAT

-

-

-

R-PDSO-F5

1

2.5W Ta 96W Tc

Single

ENHANCEMENT MODE

DRAIN

28 ns

N-Channel

SWITCHING

4.8m Ω @ 17A, 10V

4.5V @ 250μA

6290pF @ 40V

17A Ta 50A Tc

95nC @ 10V

23ns

8V 10V

±20V

9 ns

35 ns

17A

MO-240AA

20V

50A

-

80V

-

-

1.05mm

5.1mm

5.85mm

ROHS3 Compliant

-

-

Tin (Sn)

-

Lead Free

96W

No

FDMS0312AS vs FDMS86310