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FDMS8350LET40

Fairchild/ON Semiconductor FDMS8350LET40

Part Number:
FDMS8350LET40
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2850713-FDMS8350LET40
Description:
PT8 40V/20V NCH POWERTRENCH MOSF
ECAD Model:
Datasheet:
FDMS8350LET40

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Specifications
Fairchild/ON Semiconductor FDMS8350LET40 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8350LET40.
  • Lifecycle Status
    ACTIVE (Last Updated: 1 week ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Power Dissipation-Max
    3.33W Ta 125W Tc
  • Element Configuration
    Single
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    0.85m Ω @ 47A, 10V
  • Vgs(th) (Max) @ Id
    3V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    16590pF @ 20V
  • Current - Continuous Drain (Id) @ 25°C
    49A Ta 300A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    219nC @ 10V
  • Drain to Source Voltage (Vdss)
    40V
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    300A
  • RoHS Status
    ROHS3 Compliant
Description
FDMS8350LET40 Description
This N-Channel MV MOSFET FDMS8350LET40 is produced using ON Semiconductor’s advanced POWERTRENCH process that has been specially tailored to minimize the on−state resistance and yet maintain superior switching performance. The transistor FDMS8350LET40 can be applied in Primary DC−DC MOSFET, Secondary Synchronous Rectifier, and Load Switch.

FDMS8350LET40 Features
Max RDS(on) = 0.85 m at VGS = 10 V, ID = 47 A Max RDS(on) = 1.2 m at VGS = 4.5 V, ID = 38 A Advanced Package and Silicon combination for Low rDS(on) and High Efficiency MSL1 Robust Package Design 100% UIL Tested Pb−Free and RoHS Compliant

FDMS8350LET40 Applications
Primary DC−DC MOSFET Secondary Synchronous Rectifier Load Switch
FDMS8350LET40 More Descriptions
N-Channel PowerTrench® MOSFET 40V, 300A, 0.85mΩ
Power Field-Effect Transistor, 300A I(D), 40V, 0.00085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Transistors - FETs, MOSFETs - Single 1 (Unlimited) TO-252-3, DPak (2 Leads Tab), SC-63 Surface Mount MOSFET (Metal Oxide) P-Channel Tape & Reel (TR) 48m Ω @ 10A, 10V 20A Tc 175°C TJ MOSFET P-CH 60V 20A TO-252
Product Comparison
The three parts on the right have similar specifications to FDMS8350LET40.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    Element Configuration
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    RoHS Status
    Number of Channels
    Turn On Delay Time
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    Transistor Element Material
    Number of Terminations
    Subcategory
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    JEDEC-95 Code
    Drain Current-Max (Abs) (ID)
    Height
    Length
    Width
    Radiation Hardening
    Contact Plating
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    View Compare
  • FDMS8350LET40
    FDMS8350LET40
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 1 week ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    3.33W Ta 125W Tc
    Single
    N-Channel
    0.85m Ω @ 47A, 10V
    3V @ 250μA
    16590pF @ 20V
    49A Ta 300A Tc
    219nC @ 10V
    40V
    4.5V 10V
    ±20V
    300A
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550ET60
    FDMS86550ET60
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    3.3W Ta 187W Tc
    Single
    N-Channel
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    -
    8V 10V
    ±20V
    245A
    ROHS3 Compliant
    1
    43 ns
    27ns
    11 ns
    42 ns
    20V
    60V
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    FDMS8350LET40 vs FDMS86550ET60
  • FDMS86310
    FDMS86310
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    -
    2.5W Ta 96W Tc
    Single
    N-Channel
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    -
    8V 10V
    ±20V
    17A
    ROHS3 Compliant
    -
    28 ns
    23ns
    9 ns
    35 ns
    20V
    80V
    Lead Free
    SILICON
    5
    FET General Purpose Power
    DUAL
    FLAT
    R-PDSO-F5
    1
    ENHANCEMENT MODE
    96W
    DRAIN
    SWITCHING
    MO-240AA
    50A
    1.05mm
    5.1mm
    5.85mm
    No
    -
    -
    -
    -
    FDMS8350LET40 vs FDMS86310
  • FDMS0312AS
    FDMS0312AS
    Fairchild/ON Semiconductor
    ACTIVE (Last Updated: 2 days ago)
    26 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    2.5W Ta 36W Tc
    Single
    N-Channel
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    -
    4.5V 10V
    ±20V
    18A
    ROHS3 Compliant
    -
    10 ns
    2.3ns
    6 ns
    25 ns
    20V
    30V
    -
    SILICON
    5
    FET General Purpose Power
    DUAL
    FLAT
    R-PDSO-F5
    1
    ENHANCEMENT MODE
    -
    DRAIN
    SWITCHING
    MO-240AA
    22A
    1mm
    6mm
    5mm
    -
    Tin
    0.005Ohm
    100A
    33 mJ
    FDMS8350LET40 vs FDMS0312AS
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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