IXYS IXTR36P15P
- Part Number:
- IXTR36P15P
- Manufacturer:
- IXYS
- Ventron No:
- 4539023-IXTR36P15P
- Description:
- MOSFET P-CH 150V 22A ISOPLUS247
- Datasheet:
- IXTR36P15P
IXYS IXTR36P15P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTR36P15P.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseISOPLUS247™
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesPolarP™
- Published2011
- JESD-609 Codee1
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishTIN SILVER COPPER
- Additional FeatureAVALANCHE RATED, UL RECOGNIZED
- SubcategoryOther Transistors
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionSINGLE
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codeunknown
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Qualification StatusNot Qualified
- Number of Elements1
- ConfigurationSINGLE WITH BUILT-IN DIODE
- Power Dissipation-Max150W Tc
- Operating ModeENHANCEMENT MODE
- Case ConnectionISOLATED
- FET TypeP-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs120m Ω @ 18A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds2950pF @ 25V
- Current - Continuous Drain (Id) @ 25°C22A Tc
- Gate Charge (Qg) (Max) @ Vgs55nC @ 10V
- Drain to Source Voltage (Vdss)150V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Continuous Drain Current (ID)22A
- JEDEC-95 CodeTO-247AD
- Drain-source On Resistance-Max0.12Ohm
- Pulsed Drain Current-Max (IDM)100A
- DS Breakdown Voltage-Min150V
- Avalanche Energy Rating (Eas)1500 mJ
- RoHS StatusROHS3 Compliant
IXTR36P15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2950pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.As far as peak drain current is concerned, its maximum pulsed current is 100A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTR36P15P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 22A
based on its rated peak drain current 100A.
a 150V drain to source voltage (Vdss)
IXTR36P15P Applications
There are a lot of IXYS
IXTR36P15P applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2950pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.As far as peak drain current is concerned, its maximum pulsed current is 100A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).
IXTR36P15P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 22A
based on its rated peak drain current 100A.
a 150V drain to source voltage (Vdss)
IXTR36P15P Applications
There are a lot of IXYS
IXTR36P15P applications of single MOSFETs transistors.
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXTR36P15P More Descriptions
Disc Mosfet P Channel-Polar Isoplus247/Tube |Littelfuse IXTR36P15P
Polar™ Series -100V to -600V P-Channel Power MOSFETs, PLUS247™, RoHSLittelfuse SCT
P-Ch 150V 22A 150W 0,12R TO247-Isoplus
Polar™ Series -100V to -600V P-Channel Power MOSFETs, PLUS247™, RoHSLittelfuse SCT
P-Ch 150V 22A 150W 0,12R TO247-Isoplus
The three parts on the right have similar specifications to IXTR36P15P.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishAdditional FeatureSubcategoryTechnologyTerminal PositionPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Pin CountJESD-30 CodeQualification StatusNumber of ElementsConfigurationPower Dissipation-MaxOperating ModeCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Continuous Drain Current (ID)JEDEC-95 CodeDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)DS Breakdown Voltage-MinAvalanche Energy Rating (Eas)RoHS StatusNumber of PinsElement ConfigurationPower DissipationRise TimeFall Time (Typ)Turn-Off Delay TimeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltageLead FreeView Compare
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IXTR36P15P28 WeeksThrough HoleThrough HoleISOPLUS247™SILICON-55°C~175°C TJTubePolarP™2011e1yesActive1 (Unlimited)3EAR99TIN SILVER COPPERAVALANCHE RATED, UL RECOGNIZEDOther TransistorsMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3R-PSIP-T3Not Qualified1SINGLE WITH BUILT-IN DIODE150W TcENHANCEMENT MODEISOLATEDP-ChannelSWITCHING120m Ω @ 18A, 10V5V @ 250μA2950pF @ 25V22A Tc55nC @ 10V150V10V±20V22ATO-247AD0.12Ohm100A150V1500 mJROHS3 Compliant----------
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28 WeeksThrough HoleThrough HoleISOPLUS247™SILICON-55°C~175°C TJTubeHiPerFET™, PolarP2™2006e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED, UL RECOGNIZED-MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED3-Not Qualified1-300W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING8m Ω @ 60A, 10V5V @ 500μA7600pF @ 25V120A Tc235nC @ 10V-10V±20V120A-0.008Ohm400A-4000 mJROHS3 Compliant3Single300W35ns90 ns150 ns20V100VLead Free
-
10 WeeksThrough HoleThrough HoleISOPLUS247™SILICON-55°C~150°C TJTube-2001e1yesActive1 (Unlimited)3EAR99Tin/Silver/Copper (Sn/Ag/Cu)AVALANCHE RATED-MOSFET (Metal Oxide)-NOT SPECIFIED-NOT SPECIFIED3-Not Qualified1-150W TcENHANCEMENT MODEISOLATEDN-ChannelSWITCHING75m Ω @ 15A, 10V4V @ 250μA3950pF @ 25V25A Tc136nC @ 10V-10V±20V25A-0.075Ohm120A-1000 mJROHS3 Compliant3Single150W19ns17 ns79 ns20V250V-
-
28 WeeksThrough HoleThrough HoleISOPLUS247™SILICON-55°C~150°C TJTubePolarP™2012e1yesActive1 (Unlimited)3-TIN SILVER COPPERAVALANCHE RATED, UL RECOGNIZEDOther TransistorsMOSFET (Metal Oxide)SINGLENOT SPECIFIEDunknownNOT SPECIFIED3-Not Qualified1SINGLE WITH BUILT-IN DIODE312W TcENHANCEMENT MODEISOLATEDP-ChannelSWITCHING260m Ω @ 20A, 10V4V @ 1mA11500pF @ 25V22A Tc205nC @ 10V500V10V±20V22A-0.26Ohm120A500V-ROHS3 Compliant3-------Lead Free
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