IXTR36P15P

IXYS IXTR36P15P

Part Number:
IXTR36P15P
Manufacturer:
IXYS
Ventron No:
4539023-IXTR36P15P
Description:
MOSFET P-CH 150V 22A ISOPLUS247
ECAD Model:
Datasheet:
IXTR36P15P

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Specifications
IXYS IXTR36P15P technical specifications, attributes, parameters and parts with similar specifications to IXYS IXTR36P15P.
  • Factory Lead Time
    28 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    ISOPLUS247™
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    PolarP™
  • Published
    2011
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    TIN SILVER COPPER
  • Additional Feature
    AVALANCHE RATED, UL RECOGNIZED
  • Subcategory
    Other Transistors
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    SINGLE
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    unknown
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Configuration
    SINGLE WITH BUILT-IN DIODE
  • Power Dissipation-Max
    150W Tc
  • Operating Mode
    ENHANCEMENT MODE
  • Case Connection
    ISOLATED
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    120m Ω @ 18A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2950pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    22A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    55nC @ 10V
  • Drain to Source Voltage (Vdss)
    150V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Continuous Drain Current (ID)
    22A
  • JEDEC-95 Code
    TO-247AD
  • Drain-source On Resistance-Max
    0.12Ohm
  • Pulsed Drain Current-Max (IDM)
    100A
  • DS Breakdown Voltage-Min
    150V
  • Avalanche Energy Rating (Eas)
    1500 mJ
  • RoHS Status
    ROHS3 Compliant
Description
IXTR36P15P Overview
There is an avalanche breakdown in which energy is applied to the MOSFET to cause it to break down, and this energy is called avalanche energy, and the avalanche energy rating (Eas) is 1500 mJ.Op amps with either input grounded have a fixed input capacitance parameter, CI, and this device has a 2950pF @ 25V maximal input capacitance.Devices can conduct a maximum continuous current of 3 amps in the drain area, so the continuous drain current (ID) for this device is 22A amps.As far as peak drain current is concerned, its maximum pulsed current is 100A.The DS breakdown voltage should be maintained above 150V to maintain normal operation.To operate this transistor, you will need a 150V drain to source voltage (Vdss).A device like this reduces its overall power consumption when it uses drive voltage (10V).

IXTR36P15P Features
the avalanche energy rating (Eas) is 1500 mJ
a continuous drain current (ID) of 22A
based on its rated peak drain current 100A.
a 150V drain to source voltage (Vdss)


IXTR36P15P Applications
There are a lot of IXYS
IXTR36P15P applications of single MOSFETs transistors.


Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
IXTR36P15P More Descriptions
Disc Mosfet P Channel-Polar Isoplus247/Tube |Littelfuse IXTR36P15P
Polar™ Series -100V to -600V P-Channel Power MOSFETs, PLUS247™, RoHSLittelfuse SCT
P-Ch 150V 22A 150W 0,12R TO247-Isoplus
Product Comparison
The three parts on the right have similar specifications to IXTR36P15P.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Technology
    Terminal Position
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Configuration
    Power Dissipation-Max
    Operating Mode
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    DS Breakdown Voltage-Min
    Avalanche Energy Rating (Eas)
    RoHS Status
    Number of Pins
    Element Configuration
    Power Dissipation
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Lead Free
    View Compare
  • IXTR36P15P
    IXTR36P15P
    28 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    -55°C~175°C TJ
    Tube
    PolarP™
    2011
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    TIN SILVER COPPER
    AVALANCHE RATED, UL RECOGNIZED
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    R-PSIP-T3
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    150W Tc
    ENHANCEMENT MODE
    ISOLATED
    P-Channel
    SWITCHING
    120m Ω @ 18A, 10V
    5V @ 250μA
    2950pF @ 25V
    22A Tc
    55nC @ 10V
    150V
    10V
    ±20V
    22A
    TO-247AD
    0.12Ohm
    100A
    150V
    1500 mJ
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXTR200N10P
    28 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarP2™
    2006
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED, UL RECOGNIZED
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    -
    Not Qualified
    1
    -
    300W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    8m Ω @ 60A, 10V
    5V @ 500μA
    7600pF @ 25V
    120A Tc
    235nC @ 10V
    -
    10V
    ±20V
    120A
    -
    0.008Ohm
    400A
    -
    4000 mJ
    ROHS3 Compliant
    3
    Single
    300W
    35ns
    90 ns
    150 ns
    20V
    100V
    Lead Free
  • IXTR30N25
    10 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    -55°C~150°C TJ
    Tube
    -
    2001
    e1
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    -
    NOT SPECIFIED
    -
    NOT SPECIFIED
    3
    -
    Not Qualified
    1
    -
    150W Tc
    ENHANCEMENT MODE
    ISOLATED
    N-Channel
    SWITCHING
    75m Ω @ 15A, 10V
    4V @ 250μA
    3950pF @ 25V
    25A Tc
    136nC @ 10V
    -
    10V
    ±20V
    25A
    -
    0.075Ohm
    120A
    -
    1000 mJ
    ROHS3 Compliant
    3
    Single
    150W
    19ns
    17 ns
    79 ns
    20V
    250V
    -
  • IXTR40P50P
    28 Weeks
    Through Hole
    Through Hole
    ISOPLUS247™
    SILICON
    -55°C~150°C TJ
    Tube
    PolarP™
    2012
    e1
    yes
    Active
    1 (Unlimited)
    3
    -
    TIN SILVER COPPER
    AVALANCHE RATED, UL RECOGNIZED
    Other Transistors
    MOSFET (Metal Oxide)
    SINGLE
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    3
    -
    Not Qualified
    1
    SINGLE WITH BUILT-IN DIODE
    312W Tc
    ENHANCEMENT MODE
    ISOLATED
    P-Channel
    SWITCHING
    260m Ω @ 20A, 10V
    4V @ 1mA
    11500pF @ 25V
    22A Tc
    205nC @ 10V
    500V
    10V
    ±20V
    22A
    -
    0.26Ohm
    120A
    500V
    -
    ROHS3 Compliant
    3
    -
    -
    -
    -
    -
    -
    -
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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