Fairchild/ON Semiconductor FDMS8662

Name: FDMS8662
Brand: Fairchild/ON Semiconductor
SKU: 2852546-FDMS8662
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: FDMS8662

Manufacturer:: Fairchild/ON Semiconductor

Ventron No:: 2852546-FDMS8662

Description:: MOSFET N-CH 30V 28A POWER56

ECAD Model:

Datasheet:: FDMS8662

Specifications

Fairchild/ON Semiconductor FDMS8662 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8662.

Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Surface Mount
YES
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tape & Reel (TR)
Series
PowerTrench®
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
5
Terminal Finish
NOT SPECIFIED
Technology
MOSFET (Metal Oxide)
Terminal Position
DUAL
Terminal Form
NO LEAD
Pin Count
240
JESD-30 Code
R-PDSO-N5
Qualification Status
COMMERCIAL
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max
2.5W Ta 83W Tc
Operating Mode
ENHANCEMENT MODE
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
2m Ω @ 28A, 10V
Vgs(th) (Max) @ Id
3V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
6.42pF @ 15V
Current - Continuous Drain (Id) @ 25°C
28A Ta 49A Tc
Gate Charge (Qg) (Max) @ Vgs
100nC @ 10V
Drain to Source Voltage (Vdss)
30V
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
JEDEC-95 Code
MO-240AA
Drain Current-Max (Abs) (ID)
28A
Drain-source On Resistance-Max
0.002Ohm
Pulsed Drain Current-Max (IDM)
200A
DS Breakdown Voltage-Min
30V
Avalanche Energy Rating (Eas)
726 mJ
RoHS Status
ROHS3 Compliant

Description

FDMS8662 Overview
As a result of avalanche breakdown, energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating is 726 mJ.CI refers to the capacitance between two input terminals on an op amp with either input grounded, and this device's maximum input capacitance is 6.42pF @ 15V.There is no drain current on this device since the maximum continuous current it can conduct is 28A.There is a peak drain current of 200A, its maximum pulsed drain current.In order for DS breakdown voltage to remain above 30V, it should remain above the 30V level.The transistor must receive a 30V drain to source voltage (Vdss) in order to function.In addition to reducing power consumption, this device uses drive voltage (4.5V 10V).

FDMS8662 Features
the avalanche energy rating (Eas) is 726 mJ
based on its rated peak drain current 200A.
a 30V drain to source voltage (Vdss)

FDMS8662 Applications
There are a lot of Rochester Electronics, LLC
FDMS8662 applications of single MOSFETs transistors.

DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.

FDMS8662 More Descriptions

30V, 49A, 2.0 m ohm,NCH, POWER TRENCH MOSFET
Power Field-Effect Transistor, 49A I(D), 30V, 0.002ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 100-LQFP 80 64K x 8 Internal DMA, LCD, LVD, POR, PWM, WDT Surface Mount Tray 32-Bit IC MCU 32BIT 512KB FLASH 100QFP
The FDMS8662 has been designed to minimize losses in powerconversion application. Advancements in both silicon andpackage technologies have been combined to offer the lowestrDS(on) while maintaining excellent switching performance.

Product Comparison

The three parts on the right have similar specifications to FDMS8662.

Image

Part Number

Manufacturer

Mounting Type

Package / Case

Surface Mount

Transistor Element Material

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Terminal Finish

Technology

Terminal Position

Terminal Form

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Configuration

Power Dissipation-Max

Operating Mode

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

JEDEC-95 Code

Drain Current-Max (Abs) (ID)

Drain-source On Resistance-Max

Pulsed Drain Current-Max (IDM)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

Factory Lead Time

Mount

Number of Pins

Weight

Published

JESD-609 Code

Pbfree Code

ECCN Code

Resistance

Subcategory

Element Configuration

Power Dissipation

Turn On Delay Time

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Number of Channels

Contact Plating

View Compare
FDMS8662

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

YES

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Obsolete

1 (Unlimited)

5

NOT SPECIFIED

MOSFET (Metal Oxide)

DUAL

NO LEAD

240

R-PDSO-N5

COMMERCIAL

1

SINGLE WITH BUILT-IN DIODE

2.5W Ta 83W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2m Ω @ 28A, 10V

3V @ 250μA

6.42pF @ 15V

28A Ta 49A Tc

100nC @ 10V

30V

4.5V 10V

±20V

MO-240AA

28A

0.002Ohm

200A

30V

726 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
FDMS7660

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

5

Tin (Sn)

MOSFET (Metal Oxide)

DUAL

-

-

R-PDSO-N5

-

1

-

2.5W Ta 78W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

2.8m Ω @ 25A, 10V

3V @ 250μA

5565pF @ 15V

25A Ta 42A Tc

84nC @ 10V

-

4.5V 10V

±20V

MO-240AA

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 2 days ago)

18 Weeks

Surface Mount

8

68.1mg

2007

e3

yes

EAR99

2.8MOhm

FET General Purpose Power

Single

2.5W

17 ns

9ns

7 ns

37 ns

25A

1.9V

20V

30V

1.9 V

1.05mm

5mm

6mm

No SVHC

No

Lead Free

-

-

-

-

-

FDMS8662 vs FDMS7660
FDMS86550ET60

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

-

-55°C~175°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

-

Tin (Sn)

MOSFET (Metal Oxide)

-

-

-

-

-

-

-

3.3W Ta 187W Tc

-

-

N-Channel

-

1.65m Ω @ 32A, 10V

4.5V @ 250μA

8235pF @ 30V

32A Ta 245A Tc

154nC @ 10V

-

8V 10V

±20V

-

-

-

-

-

-

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

12 Weeks

Surface Mount

8

56.5mg

-

e3

yes

EAR99

-

-

Single

-

43 ns

27ns

11 ns

42 ns

245A

-

20V

60V

-

-

-

-

-

-

Lead Free

260

not_compliant

NOT SPECIFIED

1

-

FDMS8662 vs FDMS86550ET60
FDMS86550

Fairchild/ON Semiconductor

Surface Mount

8-PowerTDFN

-

SILICON

-55°C~150°C TJ

Tape & Reel (TR)

PowerTrench®

Active

1 (Unlimited)

5

-

MOSFET (Metal Oxide)

DUAL

NO LEAD

-

R-PDSO-N5

-

1

-

2.7W Ta 156W Tc

ENHANCEMENT MODE

DRAIN

N-Channel

SWITCHING

1.65m Ω @ 32A, 10V

4.5V @ 250μA

11530pF @ 30V

32A Ta 155A Tc

154nC @ 10V

-

8V 10V

±20V

MO-240AA

32A

-

320A

-

937 mJ

ROHS3 Compliant

ACTIVE (Last Updated: 3 days ago)

13 Weeks

Surface Mount

8

56.5mg

2010

e3

yes

EAR99

-

FET General Purpose Power

Single

-

43 ns

27ns

11 ns

42 ns

155A

-

20V

60V

-

1.05mm

5.1mm

6.25mm

-

-

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

1

Tin

FDMS8662 vs FDMS86550