ON Semiconductor NVB5404NT4G

NVB5404NT4G Overview
The drain current is the maximum continuous current the device can conduct, and this device has 24A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 85 ns.Peak drain current is 670A, which is the maximum pulsed drain current.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 10 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 20V to 1.For this transistor to work, a voltage 40V is required between drain and source (Vdss).

NVB5404NT4G Features
a continuous drain current (ID) of 24A
the turn-off delay time is 85 ns
based on its rated peak drain current 670A.
a 40V drain to source voltage (Vdss)


NVB5404NT4G Applications
There are a lot of ON Semiconductor
NVB5404NT4G applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies