FDMS86550ET60

Fairchild/ON Semiconductor FDMS86550ET60

Part Number:
FDMS86550ET60
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849241-FDMS86550ET60
Description:
MOSFET N-CH 60V POWER56
ECAD Model:
Datasheet:
FDMS86550ET60

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Specifications
Fairchild/ON Semiconductor FDMS86550ET60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86550ET60.
  • Lifecycle Status
    ACTIVE (Last Updated: 3 days ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    56.5mg
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    PowerTrench®
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Number of Channels
    1
  • Power Dissipation-Max
    3.3W Ta 187W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    43 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    1.65m Ω @ 32A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    8235pF @ 30V
  • Current - Continuous Drain (Id) @ 25°C
    32A Ta 245A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    154nC @ 10V
  • Rise Time
    27ns
  • Drive Voltage (Max Rds On,Min Rds On)
    8V 10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    42 ns
  • Continuous Drain Current (ID)
    245A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain to Source Breakdown Voltage
    60V
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FDMS86550ET60 Overview
A device's maximal input capacitance is 8235pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 245A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 43 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (8V 10V).

FDMS86550ET60 Features
a continuous drain current (ID) of 245A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 42 ns


FDMS86550ET60 Applications
There are a lot of ON Semiconductor
FDMS86550ET60 applications of single MOSFETs transistors.


Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDMS86550ET60 More Descriptions
N-Channel PowerTrench® MOSFET 60V, 245A, 1.65mΩ
Trans MOSFET N-CH 60V 32A 8-Pin Power QFN EP T/R
Power Field-Effect Transistor, 245A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 32-LQFP 25 1.5K x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tape & Reel (TR) 16-Bit IC MCU 16BIT 32KB FLASH 32LQFP
Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Product Comparison
The three parts on the right have similar specifications to FDMS86550ET60.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    RoHS Status
    Lead Free
    Transistor Element Material
    Published
    Number of Terminations
    Resistance
    Subcategory
    Terminal Position
    JESD-30 Code
    Number of Elements
    Operating Mode
    Power Dissipation
    Case Connection
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Nominal Vgs
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Drain to Source Voltage (Vdss)
    Terminal Form
    Drain Current-Max (Abs) (ID)
    View Compare
  • FDMS86550ET60
    FDMS86550ET60
    ACTIVE (Last Updated: 3 days ago)
    12 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    1
    3.3W Ta 187W Tc
    Single
    43 ns
    N-Channel
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    20V
    60V
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS7660
    ACTIVE (Last Updated: 2 days ago)
    18 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 78W Tc
    Single
    17 ns
    N-Channel
    2.8m Ω @ 25A, 10V
    3V @ 250μA
    5565pF @ 15V
    25A Ta 42A Tc
    84nC @ 10V
    9ns
    4.5V 10V
    ±20V
    7 ns
    37 ns
    25A
    20V
    30V
    ROHS3 Compliant
    Lead Free
    SILICON
    2007
    5
    2.8MOhm
    FET General Purpose Power
    DUAL
    R-PDSO-N5
    1
    ENHANCEMENT MODE
    2.5W
    DRAIN
    SWITCHING
    1.9V
    MO-240AA
    1.9 V
    1.05mm
    5mm
    6mm
    No SVHC
    No
    -
    -
    -
  • FDMS8050ET30
    ACTIVE, NOT REC (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Not For New Designs
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    not_compliant
    NOT SPECIFIED
    -
    3.3W Ta 180W Tc
    Single
    -
    N-Channel
    0.65m Ω @ 55A, 10V
    3V @ 750μA
    22610pF @ 15V
    55A Ta 423A Tc
    285nC @ 10V
    -
    4.5V 10V
    ±20V
    -
    -
    423A
    -
    -
    ROHS3 Compliant
    Lead Free
    -
    2017
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    30V
    -
    -
  • FDMS86310
    ACTIVE (Last Updated: 2 days ago)
    13 Weeks
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    68.1mg
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    e3
    yes
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    2.5W Ta 96W Tc
    Single
    28 ns
    N-Channel
    4.8m Ω @ 17A, 10V
    4.5V @ 250μA
    6290pF @ 40V
    17A Ta 50A Tc
    95nC @ 10V
    23ns
    8V 10V
    ±20V
    9 ns
    35 ns
    17A
    20V
    80V
    ROHS3 Compliant
    Lead Free
    SILICON
    -
    5
    -
    FET General Purpose Power
    DUAL
    R-PDSO-F5
    1
    ENHANCEMENT MODE
    96W
    DRAIN
    SWITCHING
    -
    MO-240AA
    -
    1.05mm
    5.1mm
    5.85mm
    -
    No
    -
    FLAT
    50A
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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