Fairchild/ON Semiconductor FDMS86550ET60
- Part Number:
- FDMS86550ET60
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849241-FDMS86550ET60
- Description:
- MOSFET N-CH 60V POWER56
- Datasheet:
- FDMS86550ET60
Fairchild/ON Semiconductor FDMS86550ET60 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86550ET60.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time12 Weeks
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight56.5mg
- Operating Temperature-55°C~175°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Number of Channels1
- Power Dissipation-Max3.3W Ta 187W Tc
- Element ConfigurationSingle
- Turn On Delay Time43 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs1.65m Ω @ 32A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds8235pF @ 30V
- Current - Continuous Drain (Id) @ 25°C32A Ta 245A Tc
- Gate Charge (Qg) (Max) @ Vgs154nC @ 10V
- Rise Time27ns
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)245A
- Gate to Source Voltage (Vgs)20V
- Drain to Source Breakdown Voltage60V
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
FDMS86550ET60 Overview
A device's maximal input capacitance is 8235pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 245A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 43 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (8V 10V).
FDMS86550ET60 Features
a continuous drain current (ID) of 245A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 42 ns
FDMS86550ET60 Applications
There are a lot of ON Semiconductor
FDMS86550ET60 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
A device's maximal input capacitance is 8235pF @ 30V, which is defined as the capacitance between its input terminals with either input grounded.This device's continuous drain current (ID) is 245A, which represents the maximum continuous current it can conduct.In this device, the drain-source breakdown voltage is 60V and the drain-source breakdown voltage is the VDS at which a specified value of ID flows.Its turn-off delay time is 42 ns, which is the time to charge the device's input capacitance before drain current conduction begins.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 43 ns.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.This device reduces its overall power consumption by using drive voltage (8V 10V).
FDMS86550ET60 Features
a continuous drain current (ID) of 245A
a drain-to-source breakdown voltage of 60V voltage
the turn-off delay time is 42 ns
FDMS86550ET60 Applications
There are a lot of ON Semiconductor
FDMS86550ET60 applications of single MOSFETs transistors.
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
FDMS86550ET60 More Descriptions
N-Channel PowerTrench® MOSFET 60V, 245A, 1.65mΩ
Trans MOSFET N-CH 60V 32A 8-Pin Power QFN EP T/R
Power Field-Effect Transistor, 245A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 32-LQFP 25 1.5K x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tape & Reel (TR) 16-Bit IC MCU 16BIT 32KB FLASH 32LQFP
Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
Trans MOSFET N-CH 60V 32A 8-Pin Power QFN EP T/R
Power Field-Effect Transistor, 245A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 32-LQFP 25 1.5K x 8 Internal LED, POR, Voltage Detect, WDT Surface Mount Tape & Reel (TR) 16-Bit IC MCU 16BIT 32KB FLASH 32LQFP
Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.
The three parts on the right have similar specifications to FDMS86550ET60.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightOperating TemperaturePackagingSeriesJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain to Source Breakdown VoltageRoHS StatusLead FreeTransistor Element MaterialPublishedNumber of TerminationsResistanceSubcategoryTerminal PositionJESD-30 CodeNumber of ElementsOperating ModePower DissipationCase ConnectionTransistor ApplicationThreshold VoltageJEDEC-95 CodeNominal VgsHeightLengthWidthREACH SVHCRadiation HardeningDrain to Source Voltage (Vdss)Terminal FormDrain Current-Max (Abs) (ID)View Compare
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FDMS86550ET60ACTIVE (Last Updated: 3 days ago)12 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)260not_compliantNOT SPECIFIED13.3W Ta 187W TcSingle43 nsN-Channel1.65m Ω @ 32A, 10V4.5V @ 250μA8235pF @ 30V32A Ta 245A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns245A20V60VROHS3 CompliantLead Free------------------------
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ACTIVE (Last Updated: 2 days ago)18 WeeksSurface MountSurface Mount8-PowerTDFN868.1mg-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)----2.5W Ta 78W TcSingle17 nsN-Channel2.8m Ω @ 25A, 10V3V @ 250μA5565pF @ 15V25A Ta 42A Tc84nC @ 10V9ns4.5V 10V±20V7 ns37 ns25A20V30VROHS3 CompliantLead FreeSILICON200752.8MOhmFET General Purpose PowerDUALR-PDSO-N51ENHANCEMENT MODE2.5WDRAINSWITCHING1.9VMO-240AA1.9 V1.05mm5mm6mmNo SVHCNo---
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ACTIVE, NOT REC (Last Updated: 2 days ago)6 WeeksSurface MountSurface Mount8-PowerTDFN856.5mg-55°C~175°C TJTape & Reel (TR)PowerTrench®e3yesNot For New Designs1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)260not_compliantNOT SPECIFIED-3.3W Ta 180W TcSingle-N-Channel0.65m Ω @ 55A, 10V3V @ 750μA22610pF @ 15V55A Ta 423A Tc285nC @ 10V-4.5V 10V±20V--423A--ROHS3 CompliantLead Free-2017------------------30V--
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ACTIVE (Last Updated: 2 days ago)13 WeeksSurface MountSurface Mount8-PowerTDFN868.1mg-55°C~150°C TJTape & Reel (TR)PowerTrench®e3yesActive1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)----2.5W Ta 96W TcSingle28 nsN-Channel4.8m Ω @ 17A, 10V4.5V @ 250μA6290pF @ 40V17A Ta 50A Tc95nC @ 10V23ns8V 10V±20V9 ns35 ns17A20V80VROHS3 CompliantLead FreeSILICON-5-FET General Purpose PowerDUALR-PDSO-F51ENHANCEMENT MODE96WDRAINSWITCHING-MO-240AA-1.05mm5.1mm5.85mm-No-FLAT50A
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