Fairchild/ON Semiconductor FDMS86550
- Part Number:
- FDMS86550
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849233-FDMS86550
- Description:
- MOSFET N-CH 60V 8MLP
- ECAD Model:
-
- Datasheet:
- FDMS86550
Fairchild/ON Semiconductor FDMS86550 technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS86550.
- Lifecycle StatusACTIVE (Last Updated: 3 days ago)
- Factory Lead Time13 Weeks
- Contact PlatingTin
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight56.5mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTape & Reel (TR)
- SeriesPowerTrench®
- Published2010
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormNO LEAD
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Reach Compliance Codenot_compliant
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- JESD-30 CodeR-PDSO-N5
- Number of Elements1
- Number of Channels1
- Power Dissipation-Max2.7W Ta 156W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Case ConnectionDRAIN
- Turn On Delay Time43 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs1.65m Ω @ 32A, 10V
- Vgs(th) (Max) @ Id4.5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds11530pF @ 30V
- Current - Continuous Drain (Id) @ 25°C32A Ta 155A Tc
- Gate Charge (Qg) (Max) @ Vgs154nC @ 10V
- Rise Time27ns
- Drive Voltage (Max Rds On,Min Rds On)8V 10V
- Vgs (Max)±20V
- Fall Time (Typ)11 ns
- Turn-Off Delay Time42 ns
- Continuous Drain Current (ID)155A
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)32A
- Drain to Source Breakdown Voltage60V
- Pulsed Drain Current-Max (IDM)320A
- Avalanche Energy Rating (Eas)937 mJ
- Height1.05mm
- Length5.1mm
- Width6.25mm
- RoHS StatusROHS3 Compliant
FDMS86550 Description
The ON Semiconductor FDMS86550N-Channel MOSFET is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86550 Features
Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86550 Applications
Load Switch
Primary Switch in insolated DC-DC
Synchronous Rectifier
The ON Semiconductor FDMS86550N-Channel MOSFET is produced using an advanced Power Trench? process that has been specially tailored to minimize the on-state resistance and yet maintain superior switching performance.
FDMS86550 Features
Max rDS(on) = 1.65 mΩ at VGS = 10 V, ID = 32 A
Max rDS(on) = 2.2 mΩ at VGS = 8 V, ID = 27 A
Advanced Package and Silicon combination for low rDS(on) and high efficiency
MSL1 robust package design
100% UIL tested
RoHS Compliant
FDMS86550 Applications
Load Switch
Primary Switch in insolated DC-DC
Synchronous Rectifier
FDMS86550 More Descriptions
N-Channel PowerTrench® MOSFET 60V, 234A, 1.65mΩ
MOSFET, N-CH, 60V, 234A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:234A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 32A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance andyet maintain superior switching performance.
MOSFET, N-CH, 60V, 234A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 234A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
MOSFET, N-CH, 60V, 234A, PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:234A; Source Voltage Vds:60V; On Resistance
Power Field-Effect Transistor, 32A I(D), 60V, 0.00165ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance andyet maintain superior switching performance.
MOSFET, N-CH, 60V, 234A, PQFN; Transistor Polarity: N Channel; Continuous Drain Current Id: 234A; Drain Source Voltage Vds: 60V; On Resistance Rds(on): 0.0014ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.3V; Power Dissipation Pd: 156W; Transistor Case Style: PQFN; No. of Pins: 8Pins; Operating Temperature Max: 150°C; Product Range: PowerTrench Series; Automotive Qualification Standard: -; MSL: MSL 1 - Unlimited; SVHC: No SVHC (15-Jan-2019)
The three parts on the right have similar specifications to FDMS86550.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryTechnologyTerminal PositionTerminal FormPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsNumber of ChannelsPower Dissipation-MaxElement ConfigurationOperating ModeCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRoHS StatusTerminal FinishPower DissipationThreshold VoltageFET FeatureREACH SVHCRadiation HardeningDrain to Source Voltage (Vdss)Lead FreeDrain-source On Resistance-MaxView Compare
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FDMS86550ACTIVE (Last Updated: 3 days ago)13 WeeksTinSurface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-N5112.7W Ta 156W TcSingleENHANCEMENT MODEDRAIN43 nsN-ChannelSWITCHING1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155AMO-240AA20V32A60V320A937 mJ1.05mm5.1mm6.25mmROHS3 Compliant---------- -
LAST SHIPMENTS (Last Updated: 1 week ago)--Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™2017e3yesObsolete1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLAT---R-PDSO-F51-3.3W Ta 59W TcSingleENHANCEMENT MODEDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60AMO-240AA12V-25V100A45 mJ---RoHS CompliantTin (Sn)59W1.5VSchottky Diode (Body)No SVHCNo---
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ACTIVE, NOT REC (Last Updated: 2 days ago)6 Weeks-Surface MountSurface Mount8-PowerTDFN856.5mg--55°C~175°C TJTape & Reel (TR)PowerTrench®2017e3yesNot For New Designs1 (Unlimited)-EAR99-MOSFET (Metal Oxide)--260not_compliantNOT SPECIFIED---3.3W Ta 180W TcSingle---N-Channel-0.65m Ω @ 55A, 10V3V @ 750μA22610pF @ 15V55A Ta 423A Tc285nC @ 10V-4.5V 10V±20V--423A---------ROHS3 CompliantTin (Sn)-----30VLead Free-
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ACTIVE (Last Updated: 2 days ago)26 WeeksTinSurface MountSurface Mount8-PowerTDFN874mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™-e3yesActive1 (Unlimited)5EAR99FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATNOT SPECIFIEDnot_compliantNOT SPECIFIEDR-PDSO-F51-2.5W Ta 36W TcSingleENHANCEMENT MODEDRAIN10 nsN-ChannelSWITCHING5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V2.3ns4.5V 10V±20V6 ns25 ns18AMO-240AA20V22A30V100A33 mJ1mm6mm5mmROHS3 Compliant--------0.005Ohm
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