IXYS IXFR44N60

Name: IXFR44N60
Brand: IXYS
SKU: 4539025-IXFR44N60
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: IXFR44N60

Manufacturer:: IXYS

Ventron No:: 4539025-IXFR44N60

Description:: MOSFET N-CH 600V 38A ISOPLUS247

ECAD Model:

Datasheet:: IXFR44N60

Specifications

IXYS IXFR44N60 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFR44N60.

Factory Lead Time
8 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
HiPerFET™
Published
2000
JESD-609 Code
e1
Pbfree Code
yes
Part Status
Obsolete
Number of Terminations
3
Resistance
130MOhm
Terminal Finish
Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature
AVALANCHE RATED
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Current Rating
38A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
400W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
400W
Case Connection
ISOLATED
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
130m Ω @ 22A, 10V
Vgs(th) (Max) @ Id
4.5V @ 4mA
Input Capacitance (Ciss) (Max) @ Vds
8900pF @ 25V
Current - Continuous Drain (Id) @ 25°C
38A Tc
Gate Charge (Qg) (Max) @ Vgs
330nC @ 10V
Rise Time
55ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
45 ns
Turn-Off Delay Time
110 ns
Continuous Drain Current (ID)
38A
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
60A
RoHS Status
RoHS Compliant
Lead Free
Lead Free

Description

IXFR44N60 Overview
Input capacitance, CI, is defined as the capacitance between two input terminals of an op amp with one input grounded, and the input capacitance of this device is 8900pF @ 25V.This device has a continuous drain current (ID) of [38A], which is its maximum continuous current.At a given drain-source breakdown voltage, a specified value of ID will flow. With VGS=600V, the drain-source breakdown voltage is 600V.The turn-off delay time of a device is the time it takes to charge its input capacitance before drain current can flow. The turn-off delay time of a device is 110 ns.A maximum pulsed drain current of 60A is the maximum peak drain current rated for this device.Gate-source voltage, or VGS, is the voltage across a FET transistor's gate-source terminal, and can be 20V volts.Its overall power consumption can be reduced by using drive voltage (10V).

IXFR44N60 Features
a continuous drain current (ID) of 38A
a drain-to-source breakdown voltage of 600V voltage
the turn-off delay time is 110 ns
based on its rated peak drain current 60A.

IXFR44N60 Applications
There are a lot of IXYS
IXFR44N60 applications of single MOSFETs transistors.

Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit

IXFR44N60 More Descriptions

Single N-Channel 600 V 130 mOhm 400 W Power Mosfet - ISOPLUS247
Trans MOSFET N-CH Si 600V 38A 3-Pin(3 Tab) ISOPLUS 247
MOSFET N-CH 600V 38A ISOPLUS247

Product Comparison

The three parts on the right have similar specifications to IXFR44N60.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

Published

JESD-609 Code

Pbfree Code

Part Status

Number of Terminations

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Current Rating

Time@Peak Reflow Temperature-Max (s)

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

RoHS Status

Lead Free

Moisture Sensitivity Level (MSL)

ECCN Code

Drain-source On Resistance-Max

Terminal Position

Reach Compliance Code

JESD-30 Code

Configuration

Drain to Source Voltage (Vdss)

DS Breakdown Voltage-Min

Avalanche Energy Rating (Eas)

Drain Current-Max (Abs) (ID)

View Compare
IXFR44N60

IXYS

8 Weeks

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™

2000

e1

yes

Obsolete

3

130MOhm

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

600V

MOSFET (Metal Oxide)

NOT SPECIFIED

38A

NOT SPECIFIED

3

Not Qualified

1

400W Tc

Single

ENHANCEMENT MODE

400W

ISOLATED

N-Channel

SWITCHING

130m Ω @ 22A, 10V

4.5V @ 4mA

8900pF @ 25V

38A Tc

330nC @ 10V

55ns

10V

±20V

45 ns

110 ns

38A

20V

600V

60A

RoHS Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-
IXFR180N085

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™

2000

e1

yes

Obsolete

3

-

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

3

Not Qualified

1

400W Tc

Single

ENHANCEMENT MODE

400W

ISOLATED

N-Channel

SWITCHING

7m Ω @ 500mA, 10V

4V @ 8mA

9100pF @ 25V

180A Tc

320nC @ 10V

90ns

10V

±20V

55 ns

140 ns

180A

20V

85V

720A

RoHS Compliant

-

1 (Unlimited)

EAR99

0.007Ohm

-

-

-

-

-

-

-

-

IXFR44N60 vs IXFR180N085
IXFR24N90P

IXYS

30 Weeks

Through Hole

Through Hole

ISOPLUS247™

-

SILICON

-55°C~150°C TJ

Tube

HiPerFET™, PolarP2™

2008

e1

yes

Active

3

-

Tin/Silver/Copper (Sn/Ag/Cu)

UL RECOGNIZED, AVALANCHE RATED

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

3

Not Qualified

1

230W Tc

-

ENHANCEMENT MODE

-

ISOLATED

N-Channel

SWITCHING

460m Ω @ 12A, 10V

6.5V @ 1mA

7200pF @ 25V

13A Tc

130nC @ 10V

-

10V

±30V

-

-

13A

-

-

48A

ROHS3 Compliant

-

1 (Unlimited)

-

0.46Ohm

SINGLE

unknown

R-PSIP-T3

SINGLE WITH BUILT-IN DIODE

900V

900V

1000 mJ

-

IXFR44N60 vs IXFR24N90P
IXFR30N50Q

IXYS

-

Through Hole

Through Hole

ISOPLUS247™

3

SILICON

-55°C~150°C TJ

Tube

HiPerFET™

2000

e1

yes

Obsolete

3

-

Tin/Silver/Copper (Sn/Ag/Cu)

AVALANCHE RATED

FET General Purpose Power

-

MOSFET (Metal Oxide)

NOT SPECIFIED

-

NOT SPECIFIED

3

Not Qualified

1

310W Tc

Single

ENHANCEMENT MODE

310W

ISOLATED

N-Channel

SWITCHING

160m Ω @ 15A, 10V

4V @ 4mA

3950pF @ 25V

30A Tc

150nC @ 10V

42ns

10V

±20V

20 ns

75 ns

30A

20V

500V

120A

RoHS Compliant

-

1 (Unlimited)

-

0.16Ohm

-

-

-

-

-

-

1500 mJ

29A

IXFR44N60 vs IXFR30N50Q