Fairchild/ON Semiconductor FDMS8570SDC
- Part Number:
- FDMS8570SDC
- Manufacturer:
- Fairchild/ON Semiconductor
- Ventron No:
- 2849228-FDMS8570SDC
- Description:
- MOSFET N-CH 25V 28A PQFN
- Datasheet:
- FDMS8570SDC
Fairchild/ON Semiconductor FDMS8570SDC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8570SDC.
- Lifecycle StatusLAST SHIPMENTS (Last Updated: 1 week ago)
- MountSurface Mount
- Mounting TypeSurface Mount
- Package / Case8-PowerTDFN
- Number of Pins8
- Weight90mg
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingDigi-Reel®
- SeriesPowerTrench®, SyncFET™
- Published2017
- JESD-609 Codee3
- Pbfree Codeyes
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations5
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Terminal PositionDUAL
- Terminal FormFLAT
- JESD-30 CodeR-PDSO-F5
- Number of Elements1
- Power Dissipation-Max3.3W Ta 59W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation59W
- Case ConnectionDRAIN
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs2.8m Ω @ 28A, 10V
- Vgs(th) (Max) @ Id2.2V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds2825pF @ 13V
- Current - Continuous Drain (Id) @ 25°C28A Ta 60A Tc
- Gate Charge (Qg) (Max) @ Vgs42nC @ 10V
- Rise Time4ns
- Drive Voltage (Max Rds On,Min Rds On)4.5V 10V
- Vgs (Max)±12V
- Fall Time (Typ)3 ns
- Turn-Off Delay Time33 ns
- Continuous Drain Current (ID)60A
- Threshold Voltage1.5V
- JEDEC-95 CodeMO-240AA
- Gate to Source Voltage (Vgs)12V
- Drain to Source Breakdown Voltage25V
- Pulsed Drain Current-Max (IDM)100A
- Avalanche Energy Rating (Eas)45 mJ
- FET FeatureSchottky Diode (Body)
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusRoHS Compliant
FDMS8570SDC Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2825pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDMS8570SDC Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 100A.
a threshold voltage of 1.5V
FDMS8570SDC Applications
There are a lot of ON Semiconductor
FDMS8570SDC applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2825pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.
FDMS8570SDC Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 100A.
a threshold voltage of 1.5V
FDMS8570SDC Applications
There are a lot of ON Semiconductor
FDMS8570SDC applications of single MOSFETs transistors.
LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDMS8570SDC More Descriptions
FAIRCHILD SEMICONDUCTOR FDMS8570SDC MOSFET Transistor, N Channel, 60 A, 25 V, 0.0021 ohm, 10 V, 1.5 V
Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 30-LSSOP (0.240, 6.10mm Width) 21 2K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 32KB FLASH 30LSSOP
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:59W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 30-LSSOP (0.240, 6.10mm Width) 21 2K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 32KB FLASH 30LSSOP
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:59W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
The three parts on the right have similar specifications to FDMS8570SDC.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedJESD-609 CodePbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyTerminal PositionTerminal FormJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)FET FeatureREACH SVHCRadiation HardeningRoHS StatusFactory Lead TimePeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Number of ChannelsLead FreeContact PlatingDrain Current-Max (Abs) (ID)HeightLengthWidthDrain-source On Resistance-MaxView Compare
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FDMS8570SDCLAST SHIPMENTS (Last Updated: 1 week ago)Surface MountSurface Mount8-PowerTDFN890mgSILICON-55°C~150°C TJDigi-Reel®PowerTrench®, SyncFET™2017e3yesObsolete1 (Unlimited)5EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F513.3W Ta 59W TcSingleENHANCEMENT MODE59WDRAIN11 nsN-ChannelSWITCHING2.8m Ω @ 28A, 10V2.2V @ 1mA2825pF @ 13V28A Ta 60A Tc42nC @ 10V4ns4.5V 10V±12V3 ns33 ns60A1.5VMO-240AA12V25V100A45 mJSchottky Diode (Body)No SVHCNoRoHS Compliant-------------
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ACTIVE (Last Updated: 3 days ago)Surface MountSurface Mount8-PowerTDFN856.5mg--55°C~175°C TJTape & Reel (TR)PowerTrench®-e3yesActive1 (Unlimited)-EAR99Tin (Sn)-MOSFET (Metal Oxide)----3.3W Ta 187W TcSingle---43 nsN-Channel-1.65m Ω @ 32A, 10V4.5V @ 250μA8235pF @ 30V32A Ta 245A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns245A--20V60V-----ROHS3 Compliant12 Weeks260not_compliantNOT SPECIFIED1Lead Free------
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ACTIVE (Last Updated: 3 days ago)Surface MountSurface Mount8-PowerTDFN856.5mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®2010e3yesActive1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALNO LEADR-PDSO-N512.7W Ta 156W TcSingleENHANCEMENT MODE-DRAIN43 nsN-ChannelSWITCHING1.65m Ω @ 32A, 10V4.5V @ 250μA11530pF @ 30V32A Ta 155A Tc154nC @ 10V27ns8V 10V±20V11 ns42 ns155A-MO-240AA20V60V320A937 mJ---ROHS3 Compliant13 WeeksNOT SPECIFIEDnot_compliantNOT SPECIFIED1-Tin32A1.05mm5.1mm6.25mm-
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ACTIVE (Last Updated: 2 days ago)Surface MountSurface Mount8-PowerTDFN874mgSILICON-55°C~150°C TJTape & Reel (TR)PowerTrench®, SyncFET™-e3yesActive1 (Unlimited)5EAR99-FET General Purpose PowerMOSFET (Metal Oxide)DUALFLATR-PDSO-F512.5W Ta 36W TcSingleENHANCEMENT MODE-DRAIN10 nsN-ChannelSWITCHING5m Ω @ 18A, 10V3V @ 1mA1815pF @ 15V18A Ta 22A Tc31nC @ 10V2.3ns4.5V 10V±20V6 ns25 ns18A-MO-240AA20V30V100A33 mJ---ROHS3 Compliant26 WeeksNOT SPECIFIEDnot_compliantNOT SPECIFIED--Tin22A1mm6mm5mm0.005Ohm
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