FDMS8570SDC

Fairchild/ON Semiconductor FDMS8570SDC

Part Number:
FDMS8570SDC
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
2849228-FDMS8570SDC
Description:
MOSFET N-CH 25V 28A PQFN
ECAD Model:
Datasheet:
FDMS8570SDC

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Specifications
Fairchild/ON Semiconductor FDMS8570SDC technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FDMS8570SDC.
  • Lifecycle Status
    LAST SHIPMENTS (Last Updated: 1 week ago)
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    8-PowerTDFN
  • Number of Pins
    8
  • Weight
    90mg
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Digi-Reel®
  • Series
    PowerTrench®, SyncFET™
  • Published
    2017
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    5
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    DUAL
  • Terminal Form
    FLAT
  • JESD-30 Code
    R-PDSO-F5
  • Number of Elements
    1
  • Power Dissipation-Max
    3.3W Ta 59W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    59W
  • Case Connection
    DRAIN
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    2.8m Ω @ 28A, 10V
  • Vgs(th) (Max) @ Id
    2.2V @ 1mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2825pF @ 13V
  • Current - Continuous Drain (Id) @ 25°C
    28A Ta 60A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    42nC @ 10V
  • Rise Time
    4ns
  • Drive Voltage (Max Rds On,Min Rds On)
    4.5V 10V
  • Vgs (Max)
    ±12V
  • Fall Time (Typ)
    3 ns
  • Turn-Off Delay Time
    33 ns
  • Continuous Drain Current (ID)
    60A
  • Threshold Voltage
    1.5V
  • JEDEC-95 Code
    MO-240AA
  • Gate to Source Voltage (Vgs)
    12V
  • Drain to Source Breakdown Voltage
    25V
  • Pulsed Drain Current-Max (IDM)
    100A
  • Avalanche Energy Rating (Eas)
    45 mJ
  • FET Feature
    Schottky Diode (Body)
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
Description
FDMS8570SDC Overview
When a voltage exceeds breakdown voltage of a MOSFET, breakdown phenomena occurs and current flows. It's called “Avalanche break down”, and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 45 mJ.The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2825pF @ 13V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 60A. Drain-source breakdown voltage is the VDS at which a specified value of ID flows, with VGS=25V. And this device has 25V drain to source breakdown voltage.Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 33 ns.IDM is the maximum rated peak drain current for a power MOSFET, and its maximal pulsed drain current is 100A.Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 11 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 12V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 1.5V threshold voltage. By using drive voltage (4.5V 10V), this device helps reduce its overall power consumption.

FDMS8570SDC Features
the avalanche energy rating (Eas) is 45 mJ
a continuous drain current (ID) of 60A
a drain-to-source breakdown voltage of 25V voltage
the turn-off delay time is 33 ns
based on its rated peak drain current 100A.
a threshold voltage of 1.5V


FDMS8570SDC Applications
There are a lot of ON Semiconductor
FDMS8570SDC applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
FDMS8570SDC More Descriptions
FAIRCHILD SEMICONDUCTOR FDMS8570SDC MOSFET Transistor, N Channel, 60 A, 25 V, 0.0021 ohm, 10 V, 1.5 V
Power Field-Effect Transistor, 28A I(D), 25V, 0.0028ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MO-240AA
Embedded - Microcontrollers 3 (168 Hours) 30-LSSOP (0.240, 6.10mm Width) 21 2K x 8 Internal DMA, LVD, POR, PWM, WDT Surface Mount Tray 16-Bit IC MCU 16BIT 32KB FLASH 30LSSOP
MOSFET, N-CH, 25V, 8PQFN; Transistor Polarity:N Channel; Continuous Drain Current Id:60A; Drain Source Voltage Vds:25V; On Resistance Rds(on):0.0021ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:1.5V; Power Dissipation Pd:59W; Operating Temperature Min:-55°C; Operating Temperature Max:150°C; Transistor Case Style:Power 56; No. of Pins:8; MSL:MSL 1 - Unlimited; SVHC:No SVHC (20-Jun-2013); Operating Temperature Range:-55°C to 150°C
This N-Channel SyncFET™ is produced using Fairchild Semiconductor’s advanced PowerTrench® process.Advancements in both silicon and package technologies have been combined to offer the lowest RDS(on) while maintaining excellent switching performance by extremely low Junction-to-Ambient thermal resistance. This device has the added benefit of an efficient monolithic Schottky body diode.
Product Comparison
The three parts on the right have similar specifications to FDMS8570SDC.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Subcategory
    Technology
    Terminal Position
    Terminal Form
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    FET Feature
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Number of Channels
    Lead Free
    Contact Plating
    Drain Current-Max (Abs) (ID)
    Height
    Length
    Width
    Drain-source On Resistance-Max
    View Compare
  • FDMS8570SDC
    FDMS8570SDC
    LAST SHIPMENTS (Last Updated: 1 week ago)
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    90mg
    SILICON
    -55°C~150°C TJ
    Digi-Reel®
    PowerTrench®, SyncFET™
    2017
    e3
    yes
    Obsolete
    1 (Unlimited)
    5
    EAR99
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    3.3W Ta 59W Tc
    Single
    ENHANCEMENT MODE
    59W
    DRAIN
    11 ns
    N-Channel
    SWITCHING
    2.8m Ω @ 28A, 10V
    2.2V @ 1mA
    2825pF @ 13V
    28A Ta 60A Tc
    42nC @ 10V
    4ns
    4.5V 10V
    ±12V
    3 ns
    33 ns
    60A
    1.5V
    MO-240AA
    12V
    25V
    100A
    45 mJ
    Schottky Diode (Body)
    No SVHC
    No
    RoHS Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • FDMS86550ET60
    ACTIVE (Last Updated: 3 days ago)
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    -
    -55°C~175°C TJ
    Tape & Reel (TR)
    PowerTrench®
    -
    e3
    yes
    Active
    1 (Unlimited)
    -
    EAR99
    Tin (Sn)
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    3.3W Ta 187W Tc
    Single
    -
    -
    -
    43 ns
    N-Channel
    -
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    8235pF @ 30V
    32A Ta 245A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    245A
    -
    -
    20V
    60V
    -
    -
    -
    -
    -
    ROHS3 Compliant
    12 Weeks
    260
    not_compliant
    NOT SPECIFIED
    1
    Lead Free
    -
    -
    -
    -
    -
    -
  • FDMS86550
    ACTIVE (Last Updated: 3 days ago)
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    56.5mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®
    2010
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    NO LEAD
    R-PDSO-N5
    1
    2.7W Ta 156W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    43 ns
    N-Channel
    SWITCHING
    1.65m Ω @ 32A, 10V
    4.5V @ 250μA
    11530pF @ 30V
    32A Ta 155A Tc
    154nC @ 10V
    27ns
    8V 10V
    ±20V
    11 ns
    42 ns
    155A
    -
    MO-240AA
    20V
    60V
    320A
    937 mJ
    -
    -
    -
    ROHS3 Compliant
    13 Weeks
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    1
    -
    Tin
    32A
    1.05mm
    5.1mm
    6.25mm
    -
  • FDMS0312AS
    ACTIVE (Last Updated: 2 days ago)
    Surface Mount
    Surface Mount
    8-PowerTDFN
    8
    74mg
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    PowerTrench®, SyncFET™
    -
    e3
    yes
    Active
    1 (Unlimited)
    5
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    DUAL
    FLAT
    R-PDSO-F5
    1
    2.5W Ta 36W Tc
    Single
    ENHANCEMENT MODE
    -
    DRAIN
    10 ns
    N-Channel
    SWITCHING
    5m Ω @ 18A, 10V
    3V @ 1mA
    1815pF @ 15V
    18A Ta 22A Tc
    31nC @ 10V
    2.3ns
    4.5V 10V
    ±20V
    6 ns
    25 ns
    18A
    -
    MO-240AA
    20V
    30V
    100A
    33 mJ
    -
    -
    -
    ROHS3 Compliant
    26 Weeks
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    -
    -
    Tin
    22A
    1mm
    6mm
    5mm
    0.005Ohm
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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