Vishay Siliconix SIHG30N60E-E3

SIHG30N60E-E3 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 2600pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 29A. Turn-Off delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its turn-off delay time is 63 ns. Drain to Source Resistance is the resistance between the drain and the source of a MOSFET when a specific gate-to-source voltage (VGS) is applied to bias the device to the on state, and the resistance of this device is 125mOhm. Turn-on delay time is the time taken to charge the input capacitance of the device before drain current conduction can start, and its delay time is 19 ns.The gate-source voltage, VGS, of a FET transistor is the voltage that falls across the gate-source terminal of the transistor and its voltage can be 20V.Threshold voltage is the point at which an electrical device is set to activate any one of its operations, and this transistor has 2V threshold voltage. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

SIHG30N60E-E3 Features
a continuous drain current (ID) of 29A
the turn-off delay time is 63 ns
single MOSFETs transistor is 125mOhm
a threshold voltage of 2V
a 600V drain to source voltage (Vdss)


SIHG30N60E-E3 Applications
There are a lot of Vishay Siliconix
SIHG30N60E-E3 applications of single MOSFETs transistors.


LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools