IXFH9N80

IXYS IXFH9N80

Part Number:
IXFH9N80
Manufacturer:
IXYS
Ventron No:
4539076-IXFH9N80
Description:
MOSFET N-CH 800V 9A TO-247
ECAD Model:
Datasheet:
IXFH9N80

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Specifications
IXYS IXFH9N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH9N80.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    1997
  • Pbfree Code
    yes
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Power Dissipation-Max
    180W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    180W
  • Case Connection
    DRAIN
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    900m Ω @ 500mA, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 2.5mA
  • Input Capacitance (Ciss) (Max) @ Vds
    2600pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    130nC @ 10V
  • Rise Time
    15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±20V
  • Fall Time (Typ)
    35 ns
  • Turn-Off Delay Time
    70 ns
  • Continuous Drain Current (ID)
    9A
  • Gate to Source Voltage (Vgs)
    20V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain-source On Resistance-Max
    0.9Ohm
  • Drain to Source Breakdown Voltage
    800V
  • Recovery Time
    250 ns
  • RoHS Status
    ROHS3 Compliant
Description
IXFH9N80 Overview
A device's maximum input capacitance is 2600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.

IXFH9N80 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns


IXFH9N80 Applications
There are a lot of IXYS
IXFH9N80 applications of single MOSFETs transistors.


Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IXFH9N80 More Descriptions
Trans MOSFET N-CH 800V 9A 3-Pin (3 Tab) TO-247AD
MOSFET [Ixys] IXFH9N80 MOSFET
MOSFET N-CH 800V 9A TO247AD
MOSFET N-CH 800V 9A TO-247
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXFH9N80.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Pin Count
    Qualification Status
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Recovery Time
    RoHS Status
    Reach Compliance Code
    JEDEC-95 Code
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    JESD-609 Code
    ECCN Code
    Resistance
    Terminal Finish
    Turn On Delay Time
    Threshold Voltage
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    Lead Free
    Drain to Source Voltage (Vdss)
    View Compare
  • IXFH9N80
    IXFH9N80
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    1997
    yes
    Not For New Designs
    1 (Unlimited)
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    180W Tc
    Single
    ENHANCEMENT MODE
    180W
    DRAIN
    N-Channel
    SWITCHING
    900m Ω @ 500mA, 10V
    4.5V @ 2.5mA
    2600pF @ 25V
    9A Tc
    130nC @ 10V
    15ns
    10V
    ±20V
    35 ns
    70 ns
    9A
    20V
    9A
    0.9Ohm
    800V
    250 ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH23N80Q
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    yes
    Active
    1 (Unlimited)
    3
    -
    -
    MOSFET (Metal Oxide)
    NOT SPECIFIED
    NOT SPECIFIED
    3
    Not Qualified
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    N-Channel
    -
    420m Ω @ 500mA, 10V
    4.5V @ 3mA
    4900pF @ 25V
    23A Tc
    130nC @ 10V
    27ns
    10V
    ±30V
    14 ns
    74 ns
    23A
    30V
    -
    0.4Ohm
    800V
    -
    ROHS3 Compliant
    unknown
    TO-247AD
    92A
    1500 mJ
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFH170N10P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    HiPerFET™, PolarP2™
    2006
    yes
    Active
    1 (Unlimited)
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    -
    3
    -
    1
    715W Tc
    Single
    ENHANCEMENT MODE
    714W
    DRAIN
    N-Channel
    SWITCHING
    9m Ω @ 500mA, 10V
    5V @ 4mA
    6000pF @ 25V
    170A Tc
    198nC @ 10V
    50ns
    10V
    ±20V
    33 ns
    90 ns
    170A
    20V
    -
    -
    100V
    -
    ROHS3 Compliant
    -
    TO-247AD
    -
    2000 mJ
    e1
    EAR99
    9MOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    35 ns
    5V
    21.46mm
    16.26mm
    5.3mm
    No SVHC
    No
    Lead Free
    -
  • IXFH24N60X
    19 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2015
    -
    Active
    1 (Unlimited)
    -
    -
    -
    MOSFET (Metal Oxide)
    -
    -
    -
    -
    -
    400W Tc
    -
    -
    -
    -
    N-Channel
    -
    175m Ω @ 12A, 10V
    4.5V @ 2.5mA
    1910pF @ 25V
    24A Tc
    47nC @ 10V
    -
    10V
    ±30V
    -
    -
    24A
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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