IXYS IXFH9N80 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFH9N80.
- Factory Lead Time8 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published1997
- Pbfree Codeyes
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Qualification StatusNot Qualified
- Number of Elements1
- Power Dissipation-Max180W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation180W
- Case ConnectionDRAIN
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs900m Ω @ 500mA, 10V
- Vgs(th) (Max) @ Id4.5V @ 2.5mA
- Input Capacitance (Ciss) (Max) @ Vds2600pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs130nC @ 10V
- Rise Time15ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)35 ns
- Turn-Off Delay Time70 ns
- Continuous Drain Current (ID)9A
- Gate to Source Voltage (Vgs)20V
- Drain Current-Max (Abs) (ID)9A
- Drain-source On Resistance-Max0.9Ohm
- Drain to Source Breakdown Voltage800V
- Recovery Time250 ns
- RoHS StatusROHS3 Compliant
IXFH9N80 Overview
A device's maximum input capacitance is 2600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH9N80 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
IXFH9N80 Applications
There are a lot of IXYS
IXFH9N80 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 2600pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 9A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=800V, and this device has a drain-to-source breakdown voltage of 800V voltage.Its drain current is 9A, and it is the maximum continuous current the device can conduct.A device's turn-off delay time is the amount of time it takes to charge its input capacitance before drain current conduction can begin, which is 70 ns.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
IXFH9N80 Features
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 70 ns
IXFH9N80 Applications
There are a lot of IXYS
IXFH9N80 applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
IXFH9N80 More Descriptions
Trans MOSFET N-CH 800V 9A 3-Pin (3 Tab) TO-247AD
MOSFET [Ixys] IXFH9N80 MOSFET
MOSFET N-CH 800V 9A TO247AD
MOSFET N-CH 800V 9A TO-247
Contact for details
MOSFET [Ixys] IXFH9N80 MOSFET
MOSFET N-CH 800V 9A TO247AD
MOSFET N-CH 800V 9A TO-247
Contact for details
The three parts on the right have similar specifications to IXFH9N80.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountQualification StatusNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain-source On Resistance-MaxDrain to Source Breakdown VoltageRecovery TimeRoHS StatusReach Compliance CodeJEDEC-95 CodePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)JESD-609 CodeECCN CodeResistanceTerminal FinishTurn On Delay TimeThreshold VoltageHeightLengthWidthREACH SVHCRadiation HardeningLead FreeDrain to Source Voltage (Vdss)View Compare
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IXFH9N808 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™1997yesNot For New Designs1 (Unlimited)3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1180W TcSingleENHANCEMENT MODE180WDRAINN-ChannelSWITCHING900m Ω @ 500mA, 10V4.5V @ 2.5mA2600pF @ 25V9A Tc130nC @ 10V15ns10V±20V35 ns70 ns9A20V9A0.9Ohm800V250 nsROHS3 Compliant------------------
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-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004yesActive1 (Unlimited)3--MOSFET (Metal Oxide)NOT SPECIFIEDNOT SPECIFIED3Not Qualified1500W TcSingleENHANCEMENT MODE500WDRAINN-Channel-420m Ω @ 500mA, 10V4.5V @ 3mA4900pF @ 25V23A Tc130nC @ 10V27ns10V±30V14 ns74 ns23A30V-0.4Ohm800V-ROHS3 CompliantunknownTO-247AD92A1500 mJ-------------
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30 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubeHiPerFET™, PolarP2™2006yesActive1 (Unlimited)3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)--3-1715W TcSingleENHANCEMENT MODE714WDRAINN-ChannelSWITCHING9m Ω @ 500mA, 10V5V @ 4mA6000pF @ 25V170A Tc198nC @ 10V50ns10V±20V33 ns90 ns170A20V--100V-ROHS3 Compliant-TO-247AD-2000 mJe1EAR999MOhmTin/Silver/Copper (Sn/Ag/Cu)35 ns5V21.46mm16.26mm5.3mmNo SVHCNoLead Free-
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19 WeeksThrough HoleThrough HoleTO-247-3---55°C~150°C TJTubeHiPerFET™2015-Active1 (Unlimited)---MOSFET (Metal Oxide)-----400W Tc----N-Channel-175m Ω @ 12A, 10V4.5V @ 2.5mA1910pF @ 25V24A Tc47nC @ 10V-10V±30V--24A-----ROHS3 Compliant----------------600V
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