IXYS IXFX64N50Q3
- Part Number:
- IXFX64N50Q3
- Manufacturer:
- IXYS
- Ventron No:
- 5037102-IXFX64N50Q3
- Description:
- MOSFET N-CH 500V 64A PLUS247
- Datasheet:
- IXFX64N50Q3
IXYS IXFX64N50Q3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX64N50Q3.
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins247
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesHiPerFET™
- Published2011
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Reach Compliance Codeunknown
- Pin Count3
- JESD-30 CodeR-PSIP-T3
- Number of Elements1
- Power Dissipation-Max1000W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation1kW
- Case ConnectionDRAIN
- Turn On Delay Time36 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs85m Ω @ 32A, 10V
- Vgs(th) (Max) @ Id6.5V @ 4mA
- Input Capacitance (Ciss) (Max) @ Vds6950pF @ 25V
- Current - Continuous Drain (Id) @ 25°C64A Tc
- Gate Charge (Qg) (Max) @ Vgs145nC @ 10V
- Rise Time250ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Turn-Off Delay Time46 ns
- Continuous Drain Current (ID)64A
- Gate to Source Voltage (Vgs)30V
- Drain-source On Resistance-Max0.085Ohm
- Drain to Source Breakdown Voltage500V
- Pulsed Drain Current-Max (IDM)160A
- Avalanche Energy Rating (Eas)4000 mJ
- Height21.34mm
- Length16.13mm
- Width5.21mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXFX64N50Q3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 6950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 64A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 160A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX64N50Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
IXFX64N50Q3 Applications
There are a lot of IXYS
IXFX64N50Q3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 6950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 64A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 160A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.
IXFX64N50Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.
IXFX64N50Q3 Applications
There are a lot of IXYS
IXFX64N50Q3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXFX64N50Q3 More Descriptions
Trans MOSFET N-CH 500V 64A 3-Pin(3 Tab) PLUS 247
MOSFET, Single - N-Channel, 500V, 64A, 1kW, ISOPLUS247
MOSFET N-CH 500V 64A PLUS247-3
MOSFET, Single - N-Channel, 500V, 64A, 1kW, ISOPLUS247
MOSFET N-CH 500V 64A PLUS247-3
The three parts on the right have similar specifications to IXFX64N50Q3.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryTechnologyReach Compliance CodePin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Avalanche Energy Rating (Eas)HeightLengthWidthRoHS StatusLead FreeJESD-609 CodePbfree CodeECCN CodeResistanceTerminal FinishPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Qualification StatusFall Time (Typ)Terminal PositionOutput VoltageConfigurationNominal Supply CurrentOutput CurrentNumber of DriversView Compare
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IXFX64N50Q330 WeeksThrough HoleThrough HoleTO-247-3247SILICON-55°C~150°C TJTubeHiPerFET™2011Active1 (Unlimited)3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)unknown3R-PSIP-T311000W TcSingleENHANCEMENT MODE1kWDRAIN36 nsN-ChannelSWITCHING85m Ω @ 32A, 10V6.5V @ 4mA6950pF @ 25V64A Tc145nC @ 10V250ns10V±30V46 ns64A30V0.085Ohm500V160A4000 mJ21.34mm16.13mm5.21mmROHS3 CompliantLead Free----------------
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30 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~175°C TJTubePolarHT™ HiPerFET™2006Active1 (Unlimited)3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)-3-1700W TcSingleENHANCEMENT MODE700WDRAIN-N-ChannelSWITCHING24m Ω @ 60A, 10V5V @ 4mA8000pF @ 25V120A Tc185nC @ 10V33ns10V±20V130 ns120A20V-250V-2500 mJ---ROHS3 CompliantLead Freee1yesEAR9924MOhmTin/Silver/Copper (Sn/Ag/Cu)NOT SPECIFIEDNOT SPECIFIEDNot Qualified33 ns------
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30 WeeksThrough HoleThrough HoleTO-247-3247SILICON-55°C~175°C TJTubeGigaMOS™2009Active1 (Unlimited)3AVALANCHE RATEDFET General Purpose PowerMOSFET (Metal Oxide)-3R-PSIP-T311250W Tc-ENHANCEMENT MODE-DRAIN48 nsN-ChannelSWITCHING5.2m Ω @ 60A, 10V5V @ 8mA32000pF @ 25V240A Tc460nC @ 10V125ns10V±20V77 ns240A-0.0052Ohm-600A2000 mJ---ROHS3 CompliantLead Freee1yesEAR99-Tin/Silver/Copper (Sn/Ag/Cu)NOT SPECIFIEDNOT SPECIFIEDNot Qualified145 nsSINGLE150VSINGLE WITH BUILT-IN DIODE120A240A1
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-Through HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeHiPerFET™2004Active1 (Unlimited)3AVALANCHE RATED-MOSFET (Metal Oxide)-3-1500W TcSingleENHANCEMENT MODE500WDRAIN-N-ChannelSWITCHING45m Ω @ 500mA, 10V4V @ 4mA5400pF @ 25V73A Tc195nC @ 10V36ns10V±30V82 ns73A30V0.045Ohm300V292A2500 mJ---ROHS3 Compliant-e1yes--Tin/Silver/Copper (Sn/Ag/Cu)NOT SPECIFIEDNOT SPECIFIEDNot Qualified12 ns------
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