IXFX64N50Q3

IXYS IXFX64N50Q3

Part Number:
IXFX64N50Q3
Manufacturer:
IXYS
Ventron No:
5037102-IXFX64N50Q3
Description:
MOSFET N-CH 500V 64A PLUS247
ECAD Model:
Datasheet:
IXFX64N50Q3

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Specifications
IXYS IXFX64N50Q3 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXFX64N50Q3.
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    247
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    HiPerFET™
  • Published
    2011
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Reach Compliance Code
    unknown
  • Pin Count
    3
  • JESD-30 Code
    R-PSIP-T3
  • Number of Elements
    1
  • Power Dissipation-Max
    1000W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1kW
  • Case Connection
    DRAIN
  • Turn On Delay Time
    36 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    85m Ω @ 32A, 10V
  • Vgs(th) (Max) @ Id
    6.5V @ 4mA
  • Input Capacitance (Ciss) (Max) @ Vds
    6950pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    64A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    145nC @ 10V
  • Rise Time
    250ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Turn-Off Delay Time
    46 ns
  • Continuous Drain Current (ID)
    64A
  • Gate to Source Voltage (Vgs)
    30V
  • Drain-source On Resistance-Max
    0.085Ohm
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    160A
  • Avalanche Energy Rating (Eas)
    4000 mJ
  • Height
    21.34mm
  • Length
    16.13mm
  • Width
    5.21mm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
IXFX64N50Q3 Overview
This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 4000 mJ.The maximum input capacitance of this device is 6950pF @ 25V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.Continuous drain current (ID) is the maximum continuous current (ID) the device can conduct, and it is 64A.When VGS=500V, and ID flows to VDS at 500VVDS, the drain-source breakdown voltage is 500V in this device.Before drain current conduction can begin, the device's turn-off delay time must be charged up to full capacitance. This value is 46 ns.There is no pulsed drain current maximum for this device based on its rated peak drain current 160A.During device turn-on, the input capacitance must be charged for a period of time before drain current conduction can begin, so its delay time is 36 ns seconds.Single MOSFETs transistor is the voltage across the gate-source terminal of a transistor that determines the gate-source voltage, VGS.Using drive voltage (10V), this device helps reduce its power consumption.

IXFX64N50Q3 Features
the avalanche energy rating (Eas) is 4000 mJ
a continuous drain current (ID) of 64A
a drain-to-source breakdown voltage of 500V voltage
the turn-off delay time is 46 ns
based on its rated peak drain current 160A.


IXFX64N50Q3 Applications
There are a lot of IXYS
IXFX64N50Q3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
IXFX64N50Q3 More Descriptions
Trans MOSFET N-CH 500V 64A 3-Pin(3 Tab) PLUS 247
MOSFET, Single - N-Channel, 500V, 64A, 1kW, ISOPLUS247
MOSFET N-CH 500V 64A PLUS247-3
Product Comparison
The three parts on the right have similar specifications to IXFX64N50Q3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Additional Feature
    Subcategory
    Technology
    Reach Compliance Code
    Pin Count
    JESD-30 Code
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    RoHS Status
    Lead Free
    JESD-609 Code
    Pbfree Code
    ECCN Code
    Resistance
    Terminal Finish
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Fall Time (Typ)
    Terminal Position
    Output Voltage
    Configuration
    Nominal Supply Current
    Output Current
    Number of Drivers
    View Compare
  • IXFX64N50Q3
    IXFX64N50Q3
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    247
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2011
    Active
    1 (Unlimited)
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    unknown
    3
    R-PSIP-T3
    1
    1000W Tc
    Single
    ENHANCEMENT MODE
    1kW
    DRAIN
    36 ns
    N-Channel
    SWITCHING
    85m Ω @ 32A, 10V
    6.5V @ 4mA
    6950pF @ 25V
    64A Tc
    145nC @ 10V
    250ns
    10V
    ±30V
    46 ns
    64A
    30V
    0.085Ohm
    500V
    160A
    4000 mJ
    21.34mm
    16.13mm
    5.21mm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXFX120N25P
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~175°C TJ
    Tube
    PolarHT™ HiPerFET™
    2006
    Active
    1 (Unlimited)
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    3
    -
    1
    700W Tc
    Single
    ENHANCEMENT MODE
    700W
    DRAIN
    -
    N-Channel
    SWITCHING
    24m Ω @ 60A, 10V
    5V @ 4mA
    8000pF @ 25V
    120A Tc
    185nC @ 10V
    33ns
    10V
    ±20V
    130 ns
    120A
    20V
    -
    250V
    -
    2500 mJ
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    e1
    yes
    EAR99
    24MOhm
    Tin/Silver/Copper (Sn/Ag/Cu)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    33 ns
    -
    -
    -
    -
    -
    -
  • IXFX240N15T2
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    247
    SILICON
    -55°C~175°C TJ
    Tube
    GigaMOS™
    2009
    Active
    1 (Unlimited)
    3
    AVALANCHE RATED
    FET General Purpose Power
    MOSFET (Metal Oxide)
    -
    3
    R-PSIP-T3
    1
    1250W Tc
    -
    ENHANCEMENT MODE
    -
    DRAIN
    48 ns
    N-Channel
    SWITCHING
    5.2m Ω @ 60A, 10V
    5V @ 8mA
    32000pF @ 25V
    240A Tc
    460nC @ 10V
    125ns
    10V
    ±20V
    77 ns
    240A
    -
    0.0052Ohm
    -
    600A
    2000 mJ
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    e1
    yes
    EAR99
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    145 ns
    SINGLE
    150V
    SINGLE WITH BUILT-IN DIODE
    120A
    240A
    1
  • IXFX73N30Q
    -
    Through Hole
    Through Hole
    TO-247-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    HiPerFET™
    2004
    Active
    1 (Unlimited)
    3
    AVALANCHE RATED
    -
    MOSFET (Metal Oxide)
    -
    3
    -
    1
    500W Tc
    Single
    ENHANCEMENT MODE
    500W
    DRAIN
    -
    N-Channel
    SWITCHING
    45m Ω @ 500mA, 10V
    4V @ 4mA
    5400pF @ 25V
    73A Tc
    195nC @ 10V
    36ns
    10V
    ±30V
    82 ns
    73A
    30V
    0.045Ohm
    300V
    292A
    2500 mJ
    -
    -
    -
    ROHS3 Compliant
    -
    e1
    yes
    -
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    NOT SPECIFIED
    NOT SPECIFIED
    Not Qualified
    12 ns
    -
    -
    -
    -
    -
    -
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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