Vishay Siliconix SUP90220E-GE3
- Part Number:
- SUP90220E-GE3
- Manufacturer:
- Vishay Siliconix
- Ventron No:
- 4539065-SUP90220E-GE3
- Description:
- MOSFET N-CH 200V 64A TO220AB
- Datasheet:
- SUP90220E-GE3
Vishay Siliconix SUP90220E-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP90220E-GE3.
- Factory Lead Time14 Weeks
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesThunderFET®
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Terminal FinishTin (Sn)
- TechnologyMOSFET (Metal Oxide)
- Peak Reflow Temperature (Cel)260
- Time@Peak Reflow Temperature-Max (s)30
- Power Dissipation-Max230W Tc
- FET TypeN-Channel
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds1950pF @ 100V
- Current - Continuous Drain (Id) @ 25°C64A Tc
- Gate Charge (Qg) (Max) @ Vgs48nC @ 10V
- Drain to Source Voltage (Vdss)200V
- Drive Voltage (Max Rds On,Min Rds On)7.5V 10V
- Vgs (Max)±20V
- Drain to Source Resistance18mOhm
- RoHS StatusROHS3 Compliant
SUP90220E-GE3 Overview
The maximum input capacitance of this device is 1950pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 18mOhm.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.
SUP90220E-GE3 Features
single MOSFETs transistor is 18mOhm
a 200V drain to source voltage (Vdss)
SUP90220E-GE3 Applications
There are a lot of Vishay Siliconix
SUP90220E-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
The maximum input capacitance of this device is 1950pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 18mOhm.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.
SUP90220E-GE3 Features
single MOSFETs transistor is 18mOhm
a 200V drain to source voltage (Vdss)
SUP90220E-GE3 Applications
There are a lot of Vishay Siliconix
SUP90220E-GE3 applications of single MOSFETs transistors.
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SUP90220E-GE3 More Descriptions
Trans MOSFET N-CH 200V 64A 3-Pin(3 Tab) TO-220AB
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SUP90220E-GE3
N-CHANNEL 200-V (D-S) 175C MOSFET
200V, 64A, 0.0216MoHM, N-CHANNEL, TO-220
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SUP90220E-GE3
N-CHANNEL 200-V (D-S) 175C MOSFET
200V, 64A, 0.0216MoHM, N-CHANNEL, TO-220
The three parts on the right have similar specifications to SUP90220E-GE3.
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ImagePart NumberManufacturerFactory Lead TimeMounting TypePackage / CaseOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)ECCN CodeTerminal FinishTechnologyPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power Dissipation-MaxFET TypeVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Drain to Source ResistanceRoHS StatusMountNumber of PinsWeightTransistor Element MaterialPublishedNumber of TerminationsTerminationSubcategoryBase Part NumberPin CountNumber of ElementsNumber of ChannelsElement ConfigurationOperating ModePower DissipationTurn On Delay TimeTransistor ApplicationRds On (Max) @ Id, VgsRise TimeFall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Dual Supply VoltageHeightLengthWidthRadiation HardeningContact PlatingPbfree CodeResistanceCase ConnectionThreshold VoltageMax Junction Temperature (Tj)REACH SVHCLead FreeView Compare
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SUP90220E-GE314 WeeksThrough HoleTO-220-3-55°C~175°C TJTubeThunderFET®e3Active1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)26030230W TcN-Channel4V @ 250μA1950pF @ 100V64A Tc48nC @ 10V200V7.5V 10V±20V18mOhmROHS3 Compliant-----------------------------------------
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14 WeeksThrough HoleTO-220-3-55°C~175°C TJTubeTrenchFET®-Active1 (Unlimited)EAR99-MOSFET (Metal Oxide)--3.75W Ta 272W TcN-Channel4.5V @ 250μA4700pF @ 30V90A Tc120nC @ 10V-10V±20V-ROHS3 CompliantThrough Hole36.000006gSILICON20113Through HoleFET General Purpose PowerSUP90N06311SingleENHANCEMENT MODE3.75W16 nsSWITCHING6m Ω @ 20A, 10V10ns8 ns25 ns90ATO-220AB20V0.006Ohm60V240A60V9.01mm10.41mm4.7mmNo--------
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14 WeeksThrough HoleTO-220-3-55°C~175°C TJTubeThunderFET®e3Active1 (Unlimited)EAR99Tin (Sn)MOSFET (Metal Oxide)26030375W TcN-Channel4V @ 250μA31200pF @ 100V90A Tc87nC @ 10V200V7.5V 10V±20V-ROHS3 Compliant-----------------15.2m Ω @ 30A, 10V----------------------
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14 WeeksThrough HoleTO-220-3-55°C~175°C TJTubeTrenchFET®e3Active1 (Unlimited)EAR99-MOSFET (Metal Oxide)260302.4W Ta 250W TcP-Channel3V @ 250μA9200pF @ 25V90A Tc240nC @ 10V60V4.5V 10V±20V-ROHS3 CompliantThrough Hole36.000006gSILICON20083-Other Transistors-311SingleENHANCEMENT MODE2.4W20 nsSWITCHING9.3m Ω @ 30A, 10V190ns300 ns140 ns90ATO-220AB20V--60V200A-19.31mm10.41mm4.7mmNoTinyes9.3mOhmDRAIN-1V175°CNo SVHCLead Free
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