SUP90220E-GE3

Vishay Siliconix SUP90220E-GE3

Part Number:
SUP90220E-GE3
Manufacturer:
Vishay Siliconix
Ventron No:
4539065-SUP90220E-GE3
Description:
MOSFET N-CH 200V 64A TO220AB
ECAD Model:
Datasheet:
SUP90220E-GE3

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Specifications
Vishay Siliconix SUP90220E-GE3 technical specifications, attributes, parameters and parts with similar specifications to Vishay Siliconix SUP90220E-GE3.
  • Factory Lead Time
    14 Weeks
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Series
    ThunderFET®
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Technology
    MOSFET (Metal Oxide)
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    30
  • Power Dissipation-Max
    230W Tc
  • FET Type
    N-Channel
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1950pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    64A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    48nC @ 10V
  • Drain to Source Voltage (Vdss)
    200V
  • Drive Voltage (Max Rds On,Min Rds On)
    7.5V 10V
  • Vgs (Max)
    ±20V
  • Drain to Source Resistance
    18mOhm
  • RoHS Status
    ROHS3 Compliant
Description
SUP90220E-GE3 Overview
The maximum input capacitance of this device is 1950pF @ 100V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.MOSFETs exhibit Drain-to-Source Resistance when a specific gate-to-source voltage (VGS) is applied to bias them into the on state, and this device's resistance is 18mOhm.The drain-to-source voltage (Vdss) of this transistor needs to be at 200V in order to operate.Using drive voltage (7.5V 10V), this device helps reduce its power consumption.

SUP90220E-GE3 Features
single MOSFETs transistor is 18mOhm
a 200V drain to source voltage (Vdss)


SUP90220E-GE3 Applications
There are a lot of Vishay Siliconix
SUP90220E-GE3 applications of single MOSFETs transistors.


Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
SUP90220E-GE3 More Descriptions
Trans MOSFET N-CH 200V 64A 3-Pin(3 Tab) TO-220AB
Mosfet, N-Ch, 200V, 64A, To-220Ab; Transistor Polarity:N Channel; Continuous Drain Current Id:64A; Drain Source Voltage Vds:200V; On Resistance Rds(On):0.018Ohm; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Rohs Compliant: Yes |Vishay SUP90220E-GE3
N-CHANNEL 200-V (D-S) 175C MOSFET
200V, 64A, 0.0216MoHM, N-CHANNEL, TO-220
Product Comparison
The three parts on the right have similar specifications to SUP90220E-GE3.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Terminal Finish
    Technology
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power Dissipation-Max
    FET Type
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Drain to Source Resistance
    RoHS Status
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Published
    Number of Terminations
    Termination
    Subcategory
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Rise Time
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain-source On Resistance-Max
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Dual Supply Voltage
    Height
    Length
    Width
    Radiation Hardening
    Contact Plating
    Pbfree Code
    Resistance
    Case Connection
    Threshold Voltage
    Max Junction Temperature (Tj)
    REACH SVHC
    Lead Free
    View Compare
  • SUP90220E-GE3
    SUP90220E-GE3
    14 Weeks
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    ThunderFET®
    e3
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    30
    230W Tc
    N-Channel
    4V @ 250μA
    1950pF @ 100V
    64A Tc
    48nC @ 10V
    200V
    7.5V 10V
    ±20V
    18mOhm
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUP90N06-6M0P-E3
    14 Weeks
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    TrenchFET®
    -
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    -
    -
    3.75W Ta 272W Tc
    N-Channel
    4.5V @ 250μA
    4700pF @ 30V
    90A Tc
    120nC @ 10V
    -
    10V
    ±20V
    -
    ROHS3 Compliant
    Through Hole
    3
    6.000006g
    SILICON
    2011
    3
    Through Hole
    FET General Purpose Power
    SUP90N06
    3
    1
    1
    Single
    ENHANCEMENT MODE
    3.75W
    16 ns
    SWITCHING
    6m Ω @ 20A, 10V
    10ns
    8 ns
    25 ns
    90A
    TO-220AB
    20V
    0.006Ohm
    60V
    240A
    60V
    9.01mm
    10.41mm
    4.7mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
  • SUP90142E-GE3
    14 Weeks
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    ThunderFET®
    e3
    Active
    1 (Unlimited)
    EAR99
    Tin (Sn)
    MOSFET (Metal Oxide)
    260
    30
    375W Tc
    N-Channel
    4V @ 250μA
    31200pF @ 100V
    90A Tc
    87nC @ 10V
    200V
    7.5V 10V
    ±20V
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    15.2m Ω @ 30A, 10V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • SUP90P06-09L-E3
    14 Weeks
    Through Hole
    TO-220-3
    -55°C~175°C TJ
    Tube
    TrenchFET®
    e3
    Active
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    260
    30
    2.4W Ta 250W Tc
    P-Channel
    3V @ 250μA
    9200pF @ 25V
    90A Tc
    240nC @ 10V
    60V
    4.5V 10V
    ±20V
    -
    ROHS3 Compliant
    Through Hole
    3
    6.000006g
    SILICON
    2008
    3
    -
    Other Transistors
    -
    3
    1
    1
    Single
    ENHANCEMENT MODE
    2.4W
    20 ns
    SWITCHING
    9.3m Ω @ 30A, 10V
    190ns
    300 ns
    140 ns
    90A
    TO-220AB
    20V
    -
    -60V
    200A
    -
    19.31mm
    10.41mm
    4.7mm
    No
    Tin
    yes
    9.3mOhm
    DRAIN
    -1V
    175°C
    No SVHC
    Lead Free
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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