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CSD23202W10

Texas Instruments CSD23202W10

Part Number:
CSD23202W10
Manufacturer:
Texas Instruments
Ventron No:
4539591-CSD23202W10
Description:
-12-V, P channel NexFET? power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection
ECAD Model:
Datasheet:
csd23202w10

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Specifications
Texas Instruments CSD23202W10 technical specifications, attributes, parameters and parts with similar specifications to Texas Instruments CSD23202W10.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    6 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    4-UFBGA, DSBGA
  • Number of Pins
    4
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tape & Reel (TR)
  • Series
    NexFET™
  • JESD-609 Code
    e1
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    4
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin/Silver/Copper (Sn/Ag/Cu)
  • Technology
    MOSFET (Metal Oxide)
  • Terminal Position
    BOTTOM
  • Terminal Form
    BALL
  • Peak Reflow Temperature (Cel)
    260
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    CSD23202
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    1W Ta
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    1W
  • Turn On Delay Time
    9 ns
  • FET Type
    P-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    53m Ω @ 500mA, 4.5V
  • Vgs(th) (Max) @ Id
    900mV @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    512pF @ 6V
  • Current - Continuous Drain (Id) @ 25°C
    2.2A Ta
  • Gate Charge (Qg) (Max) @ Vgs
    3.8nC @ 4.5V
  • Rise Time
    4ns
  • Drain to Source Voltage (Vdss)
    12V
  • Drive Voltage (Max Rds On,Min Rds On)
    1.5V 4.5V
  • Vgs (Max)
    -6V
  • Fall Time (Typ)
    21 ns
  • Turn-Off Delay Time
    58 ns
  • Continuous Drain Current (ID)
    2.2A
  • Gate to Source Voltage (Vgs)
    6V
  • Drain to Source Breakdown Voltage
    -12V
  • Feedback Cap-Max (Crss)
    37 pF
  • Height
    625μm
  • Length
    0m
  • Width
    0m
  • Thickness
    650μm
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
CSD23202W10 Description
CSD23202W10 is a P-channel Power MOSFET transistor from the manufacturer Texas Instrument with a voltage of 12V. The operating temperature of CSD23202W10 is -55°C~150°C TJ and its maximum power dissipation is 1W. This 12 V, 44 mΩ device is designed to deliver the lowest on-resistance and gate charge in a small 1 mm × 1 mm outline with excellent thermal characteristics in an ultra-low profile.

CSD23202W10 Features
Ultra-Low Qg and Qgd
Small Footprint 1 mm × 1 mm
Low Profile 0.62-mm Height
Gate ESD Protection – 3 kV

CSD23202W10 Applications
Battery Management 
Load Switch 
Battery Protection
CSD23202W10 More Descriptions
-12-V, P channel NexFET™ power MOSFET, single WLP 1 mm x 1 mm, 53 mOhm, gate ESD protection 4-DSBGA
Trans MOSFET P-CH 12V 2.2A 4-Pin DSBGA T/R
MOSFET 12V P-channel NexFET Pwr MOSFET
Product Comparison
The three parts on the right have similar specifications to CSD23202W10.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Technology
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Feedback Cap-Max (Crss)
    Height
    Length
    Width
    Thickness
    RoHS Status
    Lead Free
    Threshold Voltage
    REACH SVHC
    Contact Plating
    Subcategory
    Pulsed Drain Current-Max (IDM)
    Termination
    Pin Count
    Configuration
    Drain-source On Resistance-Max
    Dual Supply Voltage
    Nominal Vgs
    Radiation Hardening
    View Compare
  • CSD23202W10
    CSD23202W10
    Texas Instruments
    ACTIVE (Last Updated: 4 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    4-UFBGA, DSBGA
    4
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e1
    yes
    Active
    1 (Unlimited)
    4
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    260
    NOT SPECIFIED
    CSD23202
    1
    1
    1W Ta
    Single
    ENHANCEMENT MODE
    1W
    9 ns
    P-Channel
    SWITCHING
    53m Ω @ 500mA, 4.5V
    900mV @ 250μA
    512pF @ 6V
    2.2A Ta
    3.8nC @ 4.5V
    4ns
    12V
    1.5V 4.5V
    -6V
    21 ns
    58 ns
    2.2A
    6V
    -12V
    37 pF
    625μm
    0m
    0m
    650μm
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • CSD23382F4T
    CSD23382F4T
    Texas Instruments
    ACTIVE (Last Updated: 2 days ago)
    6 Weeks
    Surface Mount
    Surface Mount
    3-XFDFN
    3
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    FemtoFET™
    -
    yes
    Active
    1 (Unlimited)
    3
    EAR99
    -
    MOSFET (Metal Oxide)
    BOTTOM
    NO LEAD
    260
    NOT SPECIFIED
    CSD23382
    1
    1
    500mW Ta
    Single
    ENHANCEMENT MODE
    -
    28 ns
    P-Channel
    SWITCHING
    76m Ω @ 500mA, 4.5V
    1.1V @ 250μA
    235pF @ 6V
    3.5A Ta
    1.35nC @ 4.5V
    25ns
    12V
    1.8V 4.5V
    ±8V
    41 ns
    66 ns
    -3.5A
    -800mV
    -
    -
    -
    1.035mm
    635μm
    -
    ROHS3 Compliant
    Lead Free
    -800mV
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    CSD23202W10 vs CSD23382F4T
  • CSD22202W15
    CSD22202W15
    Texas Instruments
    ACTIVE (Last Updated: 6 days ago)
    16 Weeks
    Surface Mount
    Surface Mount
    9-UFBGA, DSBGA
    9
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e1
    yes
    Active
    1 (Unlimited)
    9
    -
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    -
    -
    CSD22202
    1
    -
    1.5W Ta
    Single
    ENHANCEMENT MODE
    1.5W
    10.4 ns
    P-Channel
    SWITCHING
    12.2m Ω @ 2A, 4.5V
    1.1V @ 250μA
    1390pF @ 4V
    10A Ta
    8.4nC @ 4.5V
    8.4ns
    -
    2.5V 4.5V
    -
    38 ns
    109 ns
    10A
    -6V
    8V
    250 pF
    625μm
    1.75mm
    1.75mm
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    Copper, Silver, Tin
    Other Transistors
    48A
    -
    -
    -
    -
    -
    -
    -
    CSD23202W10 vs CSD22202W15
  • CSD25301W1015
    CSD25301W1015
    Texas Instruments
    -
    -
    Surface Mount
    Surface Mount
    6-UFBGA, DSBGA
    6
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    NexFET™
    e1
    no
    Obsolete
    1 (Unlimited)
    6
    EAR99
    Tin/Silver/Copper (Sn/Ag/Cu)
    MOSFET (Metal Oxide)
    BOTTOM
    BALL
    260
    -
    CSD25301
    1
    -
    1.5W Ta
    -
    ENHANCEMENT MODE
    1.5W
    4 ns
    P-Channel
    SWITCHING
    75m Ω @ 1A, 4.5V
    1V @ 250μA
    270pF @ 10V
    2.2A Tc
    2.5nC @ 4.5V
    2ns
    -
    1.5V 4.5V
    ±8V
    12 ns
    29 ns
    2.2A
    8V
    20V
    40 pF
    -
    -
    -
    -
    ROHS3 Compliant
    Contains Lead
    -
    No SVHC
    Copper, Silver, Tin
    Other Transistors
    -
    SMD/SMT
    6
    SINGLE WITH BUILT-IN DIODE
    0.22Ohm
    20V
    750 mV
    No
    CSD23202W10 vs CSD25301W1015
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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