STP13N60M2

STMicroelectronics STP13N60M2

Part Number:
STP13N60M2
Manufacturer:
STMicroelectronics
Ventron No:
2849593-STP13N60M2
Description:
MOSFET N-CH 600V 11A TO-220
ECAD Model:
Datasheet:
STP13N60M2

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Specifications
STMicroelectronics STP13N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP13N60M2.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ II Plus
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Resistance
    380mOhm
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP13N
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Turn On Delay Time
    11 ns
  • FET Type
    N-Channel
  • Rds On (Max) @ Id, Vgs
    380m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    580pF @ 100V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    17nC @ 10V
  • Rise Time
    10ns
  • Drain to Source Voltage (Vdss)
    600V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    9.5 ns
  • Turn-Off Delay Time
    41 ns
  • Continuous Drain Current (ID)
    11A
  • Gate to Source Voltage (Vgs)
    25V
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP13N60M2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 580pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.

STP13N60M2 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 41 ns
a 600V drain to source voltage (Vdss)


STP13N60M2 Applications
There are a lot of STMicroelectronics
STP13N60M2 applications of single MOSFETs transistors.


AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STP13N60M2 More Descriptions
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
STP13N60M2 Series N-Channel 600V 380 mOhm MDmesh II Plus Power Mosfet - TO-220-3
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP13N60M2
Product Comparison
The three parts on the right have similar specifications to STP13N60M2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Resistance
    Technology
    Base Part Number
    Power Dissipation-Max
    Element Configuration
    Turn On Delay Time
    FET Type
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Gate to Source Voltage (Vgs)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Transistor Element Material
    JESD-609 Code
    Pbfree Code
    Number of Terminations
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Operating Mode
    Power Dissipation
    Transistor Application
    Threshold Voltage
    JEDEC-95 Code
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    Avalanche Energy Rating (Eas)
    JESD-30 Code
    Case Connection
    View Compare
  • STP13N60M2
    STP13N60M2
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -55°C~150°C TJ
    Tube
    MDmesh™ II Plus
    Active
    1 (Unlimited)
    EAR99
    380mOhm
    MOSFET (Metal Oxide)
    STP13N
    110W Tc
    Single
    11 ns
    N-Channel
    380m Ω @ 5.5A, 10V
    4V @ 250μA
    580pF @ 100V
    11A Tc
    17nC @ 10V
    10ns
    600V
    10V
    ±25V
    9.5 ns
    41 ns
    11A
    25V
    15.75mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP16NK60Z
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    150°C TJ
    Tube
    SuperMESH™
    Obsolete
    1 (Unlimited)
    EAR99
    38Ohm
    MOSFET (Metal Oxide)
    STP16N
    190W Tc
    Single
    30 ns
    N-Channel
    420m Ω @ 7A, 10V
    4.5V @ 50μA
    2650pF @ 25V
    14A Tc
    86nC @ 10V
    25ns
    -
    10V
    ±30V
    15 ns
    70 ns
    14A
    30V
    15.75mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    SILICON
    e3
    yes
    3
    Matte Tin (Sn)
    FET General Purpose Power
    600V
    14A
    3
    1
    ENHANCEMENT MODE
    190W
    SWITCHING
    3.75V
    TO-220AB
    600V
    56A
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
  • STP16NS25
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -65°C~150°C TJ
    Tube
    MESH OVERLAY™
    Obsolete
    1 (Unlimited)
    EAR99
    -
    MOSFET (Metal Oxide)
    STP16N
    140W Tc
    Single
    -
    N-Channel
    280m Ω @ 8A, 10V
    4V @ 250μA
    1270pF @ 25V
    16A Tc
    83nC @ 10V
    26ns
    -
    10V
    ±20V
    32 ns
    -
    16A
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    -
    SILICON
    e3
    -
    3
    Matte Tin (Sn)
    FET General Purpose Power
    250V
    16A
    3
    1
    ENHANCEMENT MODE
    140W
    SWITCHING
    -
    TO-220AB
    250V
    64A
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    0.28Ohm
    600 mJ
    -
    -
  • STP150N3LLH6
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    Obsolete
    1 (Unlimited)
    EAR99
    3.3MOhm
    MOSFET (Metal Oxide)
    STP150
    110W Tc
    Single
    -
    N-Channel
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    -
    4.5V 10V
    ±20V
    46 ns
    75 ns
    80A
    20V
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    SILICON
    e3
    -
    3
    Matte Tin (Sn)
    FET General Purpose Power
    -
    -
    3
    1
    ENHANCEMENT MODE
    110W
    SWITCHING
    -
    TO-220AB
    30V
    320A
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    -
    525 mJ
    R-PSFM-T3
    DRAIN
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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