STMicroelectronics STP13N60M2
- Part Number:
- STP13N60M2
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2849593-STP13N60M2
- Description:
- MOSFET N-CH 600V 11A TO-220
- Datasheet:
- STP13N60M2
STMicroelectronics STP13N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP13N60M2.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesMDmesh™ II Plus
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Resistance380mOhm
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP13N
- Power Dissipation-Max110W Tc
- Element ConfigurationSingle
- Turn On Delay Time11 ns
- FET TypeN-Channel
- Rds On (Max) @ Id, Vgs380m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id4V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds580pF @ 100V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs17nC @ 10V
- Rise Time10ns
- Drain to Source Voltage (Vdss)600V
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±25V
- Fall Time (Typ)9.5 ns
- Turn-Off Delay Time41 ns
- Continuous Drain Current (ID)11A
- Gate to Source Voltage (Vgs)25V
- Height15.75mm
- Length10.4mm
- Width4.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP13N60M2 Overview
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 580pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP13N60M2 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 41 ns
a 600V drain to source voltage (Vdss)
STP13N60M2 Applications
There are a lot of STMicroelectronics
STP13N60M2 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
An op amp's input capacitance is defined as the capacitance between both of its input terminals with either input grounded, and 580pF @ 100V is its maximum input capacitance.The drain current is the maximum continuous current the device can conduct, and this device has 11A continuous drain current (ID).Input capacitance must be charged before drain current conduction can begin, so the turn-off delay time is 41 ns.Before drain current conduction begins, the device's input capacitance must be charged, so the delay time is 11 ns.An FET transistor's gate-source voltage, VGS, indicates how much voltage is applied across the transistor's gate-source terminal and it can range from 25V to 1.For this transistor to work, a voltage 600V is required between drain and source (Vdss).Using drive voltage (10V), this device contributes to a reduction in overall power consumption.
STP13N60M2 Features
a continuous drain current (ID) of 11A
the turn-off delay time is 41 ns
a 600V drain to source voltage (Vdss)
STP13N60M2 Applications
There are a lot of STMicroelectronics
STP13N60M2 applications of single MOSFETs transistors.
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
STP13N60M2 More Descriptions
N-channel 600 V, 0.35 Ohm typ., 11 A MDmesh M2 Power MOSFET in TO-220 package
STP13N60M2 Series N-Channel 600V 380 mOhm MDmesh II Plus Power Mosfet - TO-220-3
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP13N60M2
STP13N60M2 Series N-Channel 600V 380 mOhm MDmesh II Plus Power Mosfet - TO-220-3
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:3V Rohs Compliant: Yes |Stmicroelectronics STP13N60M2
The three parts on the right have similar specifications to STP13N60M2.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)ECCN CodeResistanceTechnologyBase Part NumberPower Dissipation-MaxElement ConfigurationTurn On Delay TimeFET TypeRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrain to Source Voltage (Vdss)Drive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Gate to Source Voltage (Vgs)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialJESD-609 CodePbfree CodeNumber of TerminationsTerminal FinishSubcategoryVoltage - Rated DCCurrent RatingPin CountNumber of ElementsOperating ModePower DissipationTransistor ApplicationThreshold VoltageJEDEC-95 CodeDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)REACH SVHCPeak Reflow Temperature (Cel)Reach Compliance CodeTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxAvalanche Energy Rating (Eas)JESD-30 CodeCase ConnectionView Compare
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STP13N60M2ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-33-55°C~150°C TJTubeMDmesh™ II PlusActive1 (Unlimited)EAR99380mOhmMOSFET (Metal Oxide)STP13N110W TcSingle11 nsN-Channel380m Ω @ 5.5A, 10V4V @ 250μA580pF @ 100V11A Tc17nC @ 10V10ns600V10V±25V9.5 ns41 ns11A25V15.75mm10.4mm4.6mmNoROHS3 CompliantLead Free---------------------------
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--Through HoleThrough HoleTO-220-33150°C TJTubeSuperMESH™Obsolete1 (Unlimited)EAR9938OhmMOSFET (Metal Oxide)STP16N190W TcSingle30 nsN-Channel420m Ω @ 7A, 10V4.5V @ 50μA2650pF @ 25V14A Tc86nC @ 10V25ns-10V±30V15 ns70 ns14A30V15.75mm10.4mm4.6mmNoROHS3 CompliantLead FreeSILICONe3yes3Matte Tin (Sn)FET General Purpose Power600V14A31ENHANCEMENT MODE190WSWITCHING3.75VTO-220AB600V56ANo SVHC--------
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--Through HoleThrough HoleTO-220-33-65°C~150°C TJTubeMESH OVERLAY™Obsolete1 (Unlimited)EAR99-MOSFET (Metal Oxide)STP16N140W TcSingle-N-Channel280m Ω @ 8A, 10V4V @ 250μA1270pF @ 25V16A Tc83nC @ 10V26ns-10V±20V32 ns-16A20V----ROHS3 Compliant-SILICONe3-3Matte Tin (Sn)FET General Purpose Power250V16A31ENHANCEMENT MODE140WSWITCHING-TO-220AB250V64A-NOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified0.28Ohm600 mJ--
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--Through HoleThrough HoleTO-220-3--55°C~175°C TJTubeDeepGATE™, STripFET™ VIObsolete1 (Unlimited)EAR993.3MOhmMOSFET (Metal Oxide)STP150110W TcSingle-N-Channel3.3m Ω @ 40A, 10V2.5V @ 250μA4040pF @ 25V80A Tc40nC @ 4.5V18ns-4.5V 10V±20V46 ns75 ns80A20V----ROHS3 CompliantLead FreeSILICONe3-3Matte Tin (Sn)FET General Purpose Power--31ENHANCEMENT MODE110WSWITCHING-TO-220AB30V320A-NOT SPECIFIEDnot_compliantNOT SPECIFIEDNot Qualified-525 mJR-PSFM-T3DRAIN
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