STMicroelectronics STP16NK60Z

Name: STP16NK60Z
Brand: STMicroelectronics
SKU: 2851468-STP16NK60Z
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP16NK60Z

Manufacturer:: STMicroelectronics

Ventron No:: 2851468-STP16NK60Z

Description:: MOSFET N-CH 600V 14A TO-220

ECAD Model:

Datasheet:: STx16NK60Z

Specifications

STMicroelectronics STP16NK60Z technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NK60Z.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
150°C TJ
Packaging
Tube
Series
SuperMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
38Ohm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
600V
Technology
MOSFET (Metal Oxide)
Current Rating
14A
Base Part Number
STP16N
Pin Count
3
Number of Elements
1
Power Dissipation-Max
190W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
190W
Turn On Delay Time
30 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
420m Ω @ 7A, 10V
Vgs(th) (Max) @ Id
4.5V @ 50μA
Input Capacitance (Ciss) (Max) @ Vds
2650pF @ 25V
Current - Continuous Drain (Id) @ 25°C
14A Tc
Gate Charge (Qg) (Max) @ Vgs
86nC @ 10V
Rise Time
25ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±30V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
70 ns
Continuous Drain Current (ID)
14A
Threshold Voltage
3.75V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
30V
Drain to Source Breakdown Voltage
600V
Pulsed Drain Current-Max (IDM)
56A
Height
15.75mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP16NK60Z Description
Do you need both the switching benefits of power MOSFETs and the advantages of conventional transistors? The STP16NK60Z power MOSFET from STMicroelectronics can offer a remedy. It can dissipate up to 190000 mW of power. The enhancement mode is used by this N channel MOSFET transistor. It makes use of supermesh technology. The operating temperature range for this MOSFET transistor is -55 °C to 150 °C.

STP16NK60Z Features
100% avalanche tested
Gate charge minimized
Very low intrinsic capacitances
Extremely high dv/dt capability
Very good manufacturing repeatability

STP16NK60Z Applications
Industrial
Automotive
Personal electronics

STP16NK60Z More Descriptions

N-CHANNEL 600V - 0.38 Ohm -14A TO-220 Zener-Protected SuperMESH™ MOSFET
STP16NK Series N-Channel 600 V 038 Ohm 14 A SuperMESH Power MOSFET - TO-220
Trans MOSFET N-CH 600V 14A 3-Pin(3 Tab) TO-220 Tube
Power Field-Effect Transistor, 14A I(D), 620V, 0.42ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 14A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.38ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.75V; Power Dissipation Pd: 190W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Alternate Case Style: SOT-78B; Current Id Max: 14A; On State resistance @ Vgs = 10V: 420mohm; Pulse Current Idm: 56A; Voltage Vds: 600V; Voltage Vds Typ: 600V; Voltage Vgs Max: 3.75V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STP16NK60Z.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Max Operating Temperature

Min Operating Temperature

Additional Feature

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP16NK60Z

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

150°C TJ

Tube

SuperMESH™

e3

yes

Obsolete

1 (Unlimited)

3

EAR99

38Ohm

Matte Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

14A

STP16N

3

1

190W Tc

Single

ENHANCEMENT MODE

190W

30 ns

N-Channel

SWITCHING

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

25ns

10V

±30V

15 ns

70 ns

14A

3.75V

TO-220AB

30V

600V

56A

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-
STP11NM60FD

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

-

-

Tube

FDmesh™

e3

-

Active

1 (Unlimited)

3

EAR99

450mOhm

Tin (Sn)

FET General Purpose Power

600V

MOSFET (Metal Oxide)

11A

STP11N

3

1

160W Tc

Single

ENHANCEMENT MODE

160W

20 ns

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

-

TO-220AB

30V

600V

44A

15.75mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

150°C

-65°C

AVALANCHE RATED

-

-

STP16NK60Z vs STP11NM60FD
STP18NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

-

Active

1 (Unlimited)

3

EAR99

285mOhm

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP18N

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

3V

TO-220AB

25V

600V

52A

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

-

-

STP16NK60Z vs STP18NM60N
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

-

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

Single

600V

STP16NK60Z vs STP16N60M2