STMicroelectronics STP12PF06

Name: STP12PF06
Brand: STMicroelectronics
SKU: 2851501-STP12PF06
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP12PF06

Manufacturer:: STMicroelectronics

Ventron No:: 2851501-STP12PF06

Description:: MOSFET P-CH 60V 12A TO-220

ECAD Model:

Datasheet:: ST(F,P)12PF06

Specifications

STMicroelectronics STP12PF06 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12PF06.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
4.535924g
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
STripFET™ II
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
Termination
Through Hole
ECCN Code
EAR99
Resistance
200mOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
Other Transistors
Voltage - Rated DC
-60V
Technology
MOSFET (Metal Oxide)
Current Rating
-12A
Base Part Number
STP12
Pin Count
3
Number of Elements
1
Power Dissipation-Max
60W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
60W
Turn On Delay Time
20 ns
FET Type
P-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
200m Ω @ 10A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
850pF @ 25V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
21nC @ 10V
Rise Time
40ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
10 ns
Turn-Off Delay Time
40 ns
Continuous Drain Current (ID)
12A
Threshold Voltage
3.4V
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
-60V
Pulsed Drain Current-Max (IDM)
48A
Dual Supply Voltage
60V
Avalanche Energy Rating (Eas)
200 mJ
Nominal Vgs
3.4 V
Height
9.15mm
Length
10.4mm
Width
4.6mm
REACH SVHC
No SVHC
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP12PF06 Description
STP12PF06 is a Power MOSFET from the latest development of STMicroelectronics's unique "Single Feature Size?" strip-based process. The resulting transistor shows extremely high packing density for low on-resistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.

STP12PF06 Features
Typical RDS(ON)=0.18Ω
Exceptional dv/dt capabilities
100% avalanche tested
Low gate charge
Application-oriented characterization

STP12PF06 Applications
Motor control
DC-DC&DC-AC converters

STP12PF06 More Descriptions

P-Channel 60V - 0.18 Ohm - 12A TO-220 STripFET(TM) II POWER MOSFET
Trans MOSFET P-CH 60V 12A 3-Pin(3 Tab) TO-220
Power Field-Effect Transistor, 12A I(D), 60V, 0.2ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET; Transistor Type:MOSFET; Transistor Polarity:P Channel; Drain Source Voltage, Vds:60V; Continuous Drain Current, Id:12A; On Resistance, Rds(on):0.2ohm; Rds(on) Test Voltage, Vgs:10V; Package/Case:TO-220 ;RoHS Compliant: Yes
MOSFET P CH 60V 12A TO-220; Transistor Polarity: P Channel; Continuous Drain Current Id: 10A; Drain Source Voltage Vds: -60V; On Resistance Rds(on): 0.18ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3.4V; Power Dissipation Pd: 60W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015); Current Id Max: 12A; Operating Temperature Min: -55°C; Operating Temperature Range: -55°C to 175°C; Termination Type: Through Hole; Transistor Type: Power MOSFET; Voltage Vds Typ: 60V; Voltage Vgs Max: 20V; Voltage Vgs Rds on Measurement: 10V

Product Comparison

The three parts on the right have similar specifications to STP12PF06.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

Termination

ECCN Code

Resistance

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Current Rating

Base Part Number

Pin Count

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Turn On Delay Time

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Dual Supply Voltage

Avalanche Energy Rating (Eas)

Nominal Vgs

Height

Length

Width

REACH SVHC

Radiation Hardening

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Additional Feature

Number of Channels

Case Connection

Max Junction Temperature (Tj)

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP12PF06

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

4.535924g

SILICON

-55°C~175°C TJ

Tube

STripFET™ II

e3

Obsolete

Not Applicable

3

Through Hole

EAR99

200mOhm

Matte Tin (Sn)

Other Transistors

-60V

MOSFET (Metal Oxide)

-12A

STP12

3

1

60W Tc

Single

ENHANCEMENT MODE

60W

20 ns

P-Channel

SWITCHING

200m Ω @ 10A, 10V

4V @ 250μA

850pF @ 25V

12A Tc

21nC @ 10V

40ns

10V

±20V

10 ns

40 ns

12A

3.4V

TO-220AB

20V

-60V

48A

60V

200 mJ

3.4 V

9.15mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

-

350mOhm

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

12A

STP12

3

1

35W Tc

Single

ENHANCEMENT MODE

35W

20 ns

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

TO-220AB

30V

500V

48A

-

400 mJ

-

20mm

10.4mm

4.6mm

-

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

AVALANCHE RATED

1

ISOLATED

150°C

-

-

STP12PF06 vs STP12NM50FP
STP18NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

-

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

-

EAR99

285mOhm

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP18N

3

1

110W Tc

Single

ENHANCEMENT MODE

110W

12 ns

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

3V

TO-220AB

25V

600V

52A

-

-

-

15.75mm

10.4mm

4.6mm

No SVHC

No

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

-

-

-

STP12PF06 vs STP18NM60N
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

-

EAR99

-

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

STP16N

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

-

-

-

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

-

Single

600V

STP12PF06 vs STP16N60M2