STMicroelectronics STP150N3LLH6

Name: STP150N3LLH6
Brand: STMicroelectronics
SKU: 2849638-STP150N3LLH6
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP150N3LLH6

Manufacturer:: STMicroelectronics

Ventron No:: 2849638-STP150N3LLH6

Description:: MOSFET N-CH 30V 80A TO220

ECAD Model:

Datasheet:: STP150N3LLH6

Specifications

STMicroelectronics STP150N3LLH6 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP150N3LLH6.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
DeepGATE™, STripFET™ VI
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Resistance
3.3MOhm
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP150
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
110W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
110W
Case Connection
DRAIN
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
3.3m Ω @ 40A, 10V
Vgs(th) (Max) @ Id
2.5V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
4040pF @ 25V
Current - Continuous Drain (Id) @ 25°C
80A Tc
Gate Charge (Qg) (Max) @ Vgs
40nC @ 4.5V
Rise Time
18ns
Drive Voltage (Max Rds On,Min Rds On)
4.5V 10V
Vgs (Max)
±20V
Fall Time (Typ)
46 ns
Turn-Off Delay Time
75 ns
Continuous Drain Current (ID)
80A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain to Source Breakdown Voltage
30V
Pulsed Drain Current-Max (IDM)
320A
Avalanche Energy Rating (Eas)
525 mJ
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free

Description

STP150N3LLH Description
The STP150N3LLH6 power MOSFET from STMicroelectronics uses a redesigned gate structure and the 6th generation of design guidelines for ST's own STripFET technology. The Power MOSFET that results has the lowest RDS(on) among all packages. It can switch between different electrical signals in addition to enhancing electronic signals. It can dissipate up to 110000 mW of power. The operating temperature range for this MOSFET transistor is -55 °C to 175 °C. The enhancement mode is used by this N channel MOSFET transistor.

STP150N3LLH Features
High avalanche ruggedness
Low gate drive power losses
RDS(on) * Qg industry benchmark
Extremely low on-resistance RDS(on)

STP150N3LLH Application
Switching applications

STP150N3LLH6 More Descriptions

N-channel 30 V, 0.0024 Ohm, 80 A, TO-220 STripFET(TM) VI DeepGATE(TM) Power MOSFET
Trans MOSFET N-CH 30V 80A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 80A I(D), 30V, 0.0049ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB

Product Comparison

The three parts on the right have similar specifications to STP150N3LLH6.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Resistance

Terminal Finish

Subcategory

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

Case Connection

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lead Free

Lifecycle Status

Factory Lead Time

Number of Pins

Max Operating Temperature

Min Operating Temperature

Additional Feature

Voltage - Rated DC

Current Rating

Turn On Delay Time

Height

Length

Width

Radiation Hardening

Threshold Voltage

REACH SVHC

Configuration

Drain to Source Voltage (Vdss)

View Compare
STP150N3LLH6

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

e3

Obsolete

1 (Unlimited)

3

EAR99

3.3MOhm

Matte Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

NOT SPECIFIED

STP150

3

R-PSFM-T3

Not Qualified

1

110W Tc

Single

ENHANCEMENT MODE

110W

DRAIN

N-Channel

SWITCHING

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

18ns

4.5V 10V

±20V

46 ns

75 ns

80A

TO-220AB

20V

30V

320A

525 mJ

ROHS3 Compliant

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP11NM60FD

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

-

Tube

FDmesh™

e3

Active

1 (Unlimited)

3

EAR99

450mOhm

Tin (Sn)

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

STP11N

3

-

-

1

160W Tc

Single

ENHANCEMENT MODE

160W

-

N-Channel

SWITCHING

450m Ω @ 5.5A, 10V

5V @ 250μA

900pF @ 25V

11A Tc

40nC @ 10V

16ns

10V

±30V

15 ns

-

11A

TO-220AB

30V

600V

44A

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

3

150°C

-65°C

AVALANCHE RATED

600V

11A

20 ns

15.75mm

10.4mm

4.6mm

No

-

-

-

-

STP150N3LLH6 vs STP11NM60FD
STP18NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

EAR99

285mOhm

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

STP18N

3

-

-

1

110W Tc

Single

ENHANCEMENT MODE

110W

-

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

55 ns

13A

TO-220AB

25V

600V

52A

-

ROHS3 Compliant

Lead Free

ACTIVE (Last Updated: 8 months ago)

16 Weeks

3

-

-

-

-

-

12 ns

15.75mm

10.4mm

4.6mm

No

3V

No SVHC

-

-

STP150N3LLH6 vs STP18NM60N
STP16N60M2

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

150°C TJ

Tube

MDmesh™ M2

-

Active

1 (Unlimited)

-

EAR99

-

-

FET General Purpose Power

MOSFET (Metal Oxide)

-

-

-

STP16N

-

-

-

-

110W Tc

-

ENHANCEMENT MODE

-

-

N-Channel

-

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

-

ROHS3 Compliant

-

ACTIVE (Last Updated: 8 months ago)

16 Weeks

-

-

-

-

-

-

-

-

-

-

-

-

-

Single

600V

STP150N3LLH6 vs STP16N60M2