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STP18NM60N

STMicroelectronics STP18NM60N

Part Number:
STP18NM60N
Manufacturer:
STMicroelectronics
Ventron No:
2849843-STP18NM60N
Description:
MOSFET N-CH 600V 13A TO-220
ECAD Model:
Datasheet:
STP18NM60N

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Specifications
STMicroelectronics STP18NM60N technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP18NM60N.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™ II
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    285mOhm
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP18N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    110W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    110W
  • Turn On Delay Time
    12 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    285m Ω @ 6.5A, 10V
  • Vgs(th) (Max) @ Id
    4V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 50V
  • Current - Continuous Drain (Id) @ 25°C
    13A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    35nC @ 10V
  • Rise Time
    15ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    25 ns
  • Turn-Off Delay Time
    55 ns
  • Continuous Drain Current (ID)
    13A
  • Threshold Voltage
    3V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    25V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    52A
  • Height
    15.75mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP18NM60N Description
STP18NM60N N-channel Power MOSFETs developed using the second generation of MDmesh? technology. This revolutionary Power MOSFET associates a vertical structure to the company?ˉs strip layout to yield one of the world?ˉs lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.

STP18NM60N Features
100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge

STP18NM60N Applications
Automotive 
Enterprise systems 
Personal electronics
STP18NM60N More Descriptions
N-channel 600 V, 0.26 Ohm typ., 13 A MDmesh(TM) II Power MOSFET in TO-220
Single N-Channel 600 V 0.285 Ohm 35 nC 110 W Flange Mount Mosfet - TO-220-3
Trans MOSFET N-CH 600V 13A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CH, 600V, 13A, TO 220; Transistor Polarity: N Channel; Continuous Drain Current Id: 13A; Drain Source Voltage Vds: 600V; On Resistance Rds(on): 0.26ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power
Power Field-Effect Transistor, 13A I(D), 600V, 0.285ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP18NM60N.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    JESD-609 Code
    Terminal Finish
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Voltage - Rated DC
    Current Rating
    JESD-30 Code
    Drain-source On Resistance-Max
    Number of Channels
    Case Connection
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    View Compare
  • STP18NM60N
    STP18NM60N
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    Active
    1 (Unlimited)
    3
    EAR99
    285mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP18N
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    12 ns
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    15ns
    10V
    ±25V
    25 ns
    55 ns
    13A
    3V
    TO-220AB
    25V
    600V
    52A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60FD
    STP11NM60FD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    Tube
    FDmesh™
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    600V
    44A
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    e3
    Tin (Sn)
    150°C
    -65°C
    AVALANCHE RATED
    600V
    11A
    -
    -
    -
    -
    -
    -
    STP18NM60N vs STP11NM60FD
  • STP180NS04ZC
    STP180NS04ZC
    STMicroelectronics
    NRND (Last Updated: 8 months ago)
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    SAFeFET™
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP180
    3
    1
    330W Tc
    Single
    ENHANCEMENT MODE
    300W
    -
    N-Channel
    SWITCHING
    4.2m Ω @ 40A, 10V
    4V @ 1mA
    4560pF @ 25V
    120A Tc
    110nC @ 10V
    250ns
    10V
    ±20V
    115 ns
    -
    120A
    -
    TO-220AB
    20V
    33V
    480A
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    e3
    Matte Tin (Sn)
    -
    -
    -
    -
    -
    R-PSFM-T3
    0.0042Ohm
    -
    -
    -
    -
    STP18NM60N vs STP180NS04ZC
  • STP12NM50FP
    STP12NM50FP
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    Active
    1 (Unlimited)
    3
    -
    350mOhm
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP12
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    10V
    ±30V
    -
    -
    12A
    4V
    TO-220AB
    30V
    500V
    48A
    20mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    e3
    Matte Tin (Sn) - annealed
    -
    -
    AVALANCHE RATED
    500V
    12A
    -
    -
    1
    ISOLATED
    400 mJ
    150°C
    STP18NM60N vs STP12NM50FP
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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