STMicroelectronics STP11NM60FD
- Part Number:
- STP11NM60FD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2850209-STP11NM60FD
- Description:
- MOSFET N-CH 600V 11A TO-220
- ECAD Model:
-
- Datasheet:
- STP11NM60FD
STMicroelectronics STP11NM60FD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP11NM60FD.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Number of Pins3
- PackagingTube
- SeriesFDmesh™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance450mOhm
- Terminal FinishTin (Sn)
- Max Operating Temperature150°C
- Min Operating Temperature-65°C
- Additional FeatureAVALANCHE RATED
- SubcategoryFET General Purpose Power
- Voltage - Rated DC600V
- TechnologyMOSFET (Metal Oxide)
- Current Rating11A
- Base Part NumberSTP11N
- Pin Count3
- Number of Elements1
- Power Dissipation-Max160W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation160W
- Turn On Delay Time20 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs450m Ω @ 5.5A, 10V
- Vgs(th) (Max) @ Id5V @ 250μA
- Input Capacitance (Ciss) (Max) @ Vds900pF @ 25V
- Current - Continuous Drain (Id) @ 25°C11A Tc
- Gate Charge (Qg) (Max) @ Vgs40nC @ 10V
- Rise Time16ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)15 ns
- Continuous Drain Current (ID)11A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain to Source Breakdown Voltage600V
- Pulsed Drain Current-Max (IDM)44A
- Height15.75mm
- Length10.4mm
- Width4.6mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP11NM60FD Description
STP11NM60FD is a kind of N-channel STripFET II? power MOSFET provided by STMicroelectronics based on its unique “Single Feature Size?” strip-based process. It is able to provide low on-state resistance while ensuring a low gate charge. Moreover, it can minimize conduction and switching losses when it acts as a high and low side in buck regulators in the motherboard requiring fast switching and high efficiency.
STP11NM60FD Features
Low gate charge
Low on-state resistance
Conduction and switching losses
“Single Feature Size?” strip-based process
Available in the TO-220 package
STP11NM60FD Applications
Switching application
STP11NM60FD is a kind of N-channel STripFET II? power MOSFET provided by STMicroelectronics based on its unique “Single Feature Size?” strip-based process. It is able to provide low on-state resistance while ensuring a low gate charge. Moreover, it can minimize conduction and switching losses when it acts as a high and low side in buck regulators in the motherboard requiring fast switching and high efficiency.
STP11NM60FD Features
Low gate charge
Low on-state resistance
Conduction and switching losses
“Single Feature Size?” strip-based process
Available in the TO-220 package
STP11NM60FD Applications
Switching application
STP11NM60FD More Descriptions
N-Channel 600V - 0.4Ohm - 11A FDmesh(TM) POWER MOSFET (with FAST DIODE)
Transistor MOSFET N-CH 600V 11A 3-Pin (3 Tab) TO-220 Tube
N-Channel 600 V 0.45 Ohm Flange Mount MDmesh Power MosFet - TO-220
N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 packageCiiva Crawler
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP11NM60FD
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Transistor MOSFET N-CH 600V 11A 3-Pin (3 Tab) TO-220 Tube
N-Channel 600 V 0.45 Ohm Flange Mount MDmesh Power MosFet - TO-220
N-channel 600 V, 0.38 Ohm typ., 11 A MDmesh Power MOSFET in TO-220 packageCiiva Crawler
Mosfet, N-Ch, 600V, 11A, To-220Ab; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V Rohs Compliant: Yes |Stmicroelectronics STP11NM60FD
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP11NM60FD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsPackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishMax Operating TemperatureMin Operating TemperatureAdditional FeatureSubcategoryVoltage - Rated DCTechnologyCurrent RatingBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Continuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)HeightLengthWidthRadiation HardeningRoHS StatusLead FreeTransistor Element MaterialOperating TemperaturePbfree CodeTurn-Off Delay TimeThreshold VoltageREACH SVHCJESD-30 CodeDrain-source On Resistance-MaxConfigurationDrain to Source Voltage (Vdss)View Compare
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STP11NM60FDACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-33TubeFDmesh™e3Active1 (Unlimited)3EAR99450mOhmTin (Sn)150°C-65°CAVALANCHE RATEDFET General Purpose Power600VMOSFET (Metal Oxide)11ASTP11N31160W TcSingleENHANCEMENT MODE160W20 nsN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns10V±30V15 ns11ATO-220AB30V600V44A15.75mm10.4mm4.6mmNoROHS3 CompliantLead Free----------- -
--Through HoleThrough HoleTO-220-33TubeSuperMESH™e3Obsolete1 (Unlimited)3EAR9938OhmMatte Tin (Sn)---FET General Purpose Power600VMOSFET (Metal Oxide)14ASTP16N31190W TcSingleENHANCEMENT MODE190W30 nsN-ChannelSWITCHING420m Ω @ 7A, 10V4.5V @ 50μA2650pF @ 25V14A Tc86nC @ 10V25ns10V±30V15 ns14ATO-220AB30V600V56A15.75mm10.4mm4.6mmNoROHS3 CompliantLead FreeSILICON150°C TJyes70 ns3.75VNo SVHC----
-
NRND (Last Updated: 8 months ago)-Through HoleThrough HoleTO-220-3-TubeSAFeFET™e3Not For New Designs1 (Unlimited)3EAR99-Matte Tin (Sn)---FET General Purpose Power-MOSFET (Metal Oxide)-STP18031330W TcSingleENHANCEMENT MODE300W-N-ChannelSWITCHING4.2m Ω @ 40A, 10V4V @ 1mA4560pF @ 25V120A Tc110nC @ 10V250ns10V±20V115 ns120ATO-220AB20V33V480A---NoROHS3 Compliant-SILICON-55°C~175°C TJ----R-PSFM-T30.0042Ohm--
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ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3-TubeMDmesh™ M2-Active1 (Unlimited)-EAR99-----FET General Purpose Power-MOSFET (Metal Oxide)-STP16N--110W Tc-ENHANCEMENT MODE--N-Channel-320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V-10V±25V-12A--------ROHS3 Compliant--150°C TJ------Single600V
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