STMicroelectronics STP11NM60A

STP11NM60A Overview
As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 1211pF @ 25V.This device conducts a continuous drain current (ID) of 11A, which is the maximum continuous current transistor can conduct.Using VGS=600V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 600V (that is, no charge flow from drain to source).Pulsed drain current is maximum rated peak drain current 44A.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STP11NM60A Features
a continuous drain current (ID) of 11A
a drain-to-source breakdown voltage of 600V voltage
based on its rated peak drain current 44A.


STP11NM60A Applications
There are a lot of STMicroelectronics
STP11NM60A applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching