STMicroelectronics STP180NS04ZC
- Part Number:
- STP180NS04ZC
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2850095-STP180NS04ZC
- Description:
- MOSFET N-CH 33V 120A TO-220
- Datasheet:
- STP180NS04ZC
STMicroelectronics STP180NS04ZC technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP180NS04ZC.
- Lifecycle StatusNRND (Last Updated: 8 months ago)
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- SeriesSAFeFET™
- JESD-609 Codee3
- Part StatusNot For New Designs
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP180
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Power Dissipation-Max330W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation300W
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs4.2m Ω @ 40A, 10V
- Vgs(th) (Max) @ Id4V @ 1mA
- Input Capacitance (Ciss) (Max) @ Vds4560pF @ 25V
- Current - Continuous Drain (Id) @ 25°C120A Tc
- Gate Charge (Qg) (Max) @ Vgs110nC @ 10V
- Rise Time250ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±20V
- Fall Time (Typ)115 ns
- Continuous Drain Current (ID)120A
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)20V
- Drain-source On Resistance-Max0.0042Ohm
- Drain to Source Breakdown Voltage33V
- Pulsed Drain Current-Max (IDM)480A
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STP180NS04ZC Overview
A device's maximum input capacitance is 4560pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=33V, and this device has a drain-to-source breakdown voltage of 33V voltage.Its maximum pulsed drain current is 480A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP180NS04ZC Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 33V voltage
based on its rated peak drain current 480A.
STP180NS04ZC Applications
There are a lot of STMicroelectronics
STP180NS04ZC applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
A device's maximum input capacitance is 4560pF @ 25V, but its input capacitance parameter, CI, is measured as the capacitance between the input terminals of the device with either input grounded.Its continuous drain current is 120A for this device. Drain current refers to the capacity of the device to conduct continuous current.Single MOSFETs transistor is the voltage at which VDS flows at a specified ID value, wSingle MOSFETs transistorh VGS=33V, and this device has a drain-to-source breakdown voltage of 33V voltage.Its maximum pulsed drain current is 480A, which is also its maximum rating peak drainage current.Generally, the gate-source voltage (VGS) of a FET transistor is the voltage across its gate-source terminal, which is 20V.This device uses no drive voltage (10V) to reduce its overall power consumption.
STP180NS04ZC Features
a continuous drain current (ID) of 120A
a drain-to-source breakdown voltage of 33V voltage
based on its rated peak drain current 480A.
STP180NS04ZC Applications
There are a lot of STMicroelectronics
STP180NS04ZC applications of single MOSFETs transistors.
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,
Lighting, Server, Telecom and UPS.
DC-to-DC converters
STP180NS04ZC More Descriptions
Trans MOSFET N-CH 33V 120A 3-Pin(3 Tab) TO-220 Tube
N-channel 40 V clamped 3.6 mOhm typ., 120 A fully protected SAFeFET(TM) Power MOSFET in a TO-220 package
Power Field-Effect Transistor, 120A I(D), 33V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N-channel 40 V clamped 3.6 mOhm typ., 120 A fully protected SAFeFET(TM) Power MOSFET in a TO-220 package
Power Field-Effect Transistor, 120A I(D), 33V, 0.0042ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
The three parts on the right have similar specifications to STP180NS04ZC.
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ImagePart NumberManufacturerLifecycle StatusMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeTerminal FinishSubcategoryTechnologyBase Part NumberPin CountJESD-30 CodeNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Continuous Drain Current (ID)JEDEC-95 CodeGate to Source Voltage (Vgs)Drain-source On Resistance-MaxDrain to Source Breakdown VoltagePulsed Drain Current-Max (IDM)Radiation HardeningRoHS StatusNumber of PinsVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusAvalanche Energy Rating (Eas)Factory Lead TimeResistanceMax Operating TemperatureMin Operating TemperatureAdditional FeatureTurn On Delay TimeHeightLengthWidthLead FreeTurn-Off Delay TimeThreshold VoltageREACH SVHCView Compare
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STP180NS04ZCNRND (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-3SILICON-55°C~175°C TJTubeSAFeFET™e3Not For New Designs1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP1803R-PSFM-T31330W TcSingleENHANCEMENT MODE300WN-ChannelSWITCHING4.2m Ω @ 40A, 10V4V @ 1mA4560pF @ 25V120A Tc110nC @ 10V250ns10V±20V115 ns120ATO-220AB20V0.0042Ohm33V480ANoROHS3 Compliant----------------------
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-Through HoleThrough HoleTO-220-3SILICON-65°C~150°C TJTubeMESH OVERLAY™e3Obsolete1 (Unlimited)3EAR99Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP16N3-1140W TcSingleENHANCEMENT MODE140WN-ChannelSWITCHING280m Ω @ 8A, 10V4V @ 250μA1270pF @ 25V16A Tc83nC @ 10V26ns10V±20V32 ns16ATO-220AB20V0.28Ohm250V64A-ROHS3 Compliant3250VNOT SPECIFIEDnot_compliant16ANOT SPECIFIEDNot Qualified600 mJ-------------
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ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-3--TubeFDmesh™e3Active1 (Unlimited)3EAR99Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP11N3-1160W TcSingleENHANCEMENT MODE160WN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns10V±30V15 ns11ATO-220AB30V-600V44ANoROHS3 Compliant3600V--11A---16 Weeks450mOhm150°C-65°CAVALANCHE RATED20 ns15.75mm10.4mm4.6mmLead Free---
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ACTIVE (Last Updated: 8 months ago)Through HoleThrough HoleTO-220-3SILICON-55°C~150°C TJTubeMDmesh™ II-Active1 (Unlimited)3EAR99-FET General Purpose PowerMOSFET (Metal Oxide)STP18N3-1110W TcSingleENHANCEMENT MODE110WN-ChannelSWITCHING285m Ω @ 6.5A, 10V4V @ 250μA1000pF @ 50V13A Tc35nC @ 10V15ns10V±25V25 ns13ATO-220AB25V-600V52ANoROHS3 Compliant3-------16 Weeks285mOhm---12 ns15.75mm10.4mm4.6mmLead Free55 ns3VNo SVHC
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