STMicroelectronics STP16NS25

Name: STP16NS25
Brand: STMicroelectronics
SKU: 2851454-STP16NS25
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP16NS25

Manufacturer:: STMicroelectronics

Ventron No:: 2851454-STP16NS25

Description:: MOSFET N-CH 250V 16A TO-220

ECAD Model:

Datasheet:: STP16NS25

Specifications

STMicroelectronics STP16NS25 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16NS25.

Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~150°C TJ
Packaging
Tube
Series
MESH OVERLAY™
JESD-609 Code
e3
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Subcategory
FET General Purpose Power
Voltage - Rated DC
250V
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Reach Compliance Code
not_compliant
Current Rating
16A
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP16N
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Power Dissipation-Max
140W Tc
Element Configuration
Single
Operating Mode
ENHANCEMENT MODE
Power Dissipation
140W
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
280m Ω @ 8A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
1270pF @ 25V
Current - Continuous Drain (Id) @ 25°C
16A Tc
Gate Charge (Qg) (Max) @ Vgs
83nC @ 10V
Rise Time
26ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
32 ns
Continuous Drain Current (ID)
16A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Drain-source On Resistance-Max
0.28Ohm
Drain to Source Breakdown Voltage
250V
Pulsed Drain Current-Max (IDM)
64A
Avalanche Energy Rating (Eas)
600 mJ
RoHS Status
ROHS3 Compliant

Description

STP16NS25 Description
Produced by STMicroelectronics is STP16NS25. It falls within the category of electronic components, ICs. It is used in a wide variety of industries, including automotive ADAS, industrial EPOS, and enterprise systems, data centers, and enterprise computing. And these are the key specifications for this component: MOSFET, N, TO-220; MOSFET transistor type. Resistance, Rds on: 0.28R; Voltage, Vgs Rds on measurement: 10V; Voltage, Vds typ: 250V; Current, Id cont: 16A. It is also environmentally friendly and RoHS compliant (lead free).

STP16NS25 Features
100% AVALANCHE TESTED
TYPICAL RDS(on) = 0.23 ?n
EXTREMELY HIGH dv/dt CAPABILITYn

STP16NS25 Applications
Industrial
Automotive
Enterprise systems

STP16NS25 More Descriptions

Transistor MOSFET N-CH 250V 16A 3-Pin (3 Tab) TO-220 Tube
N-Channel 250V - 0.23 Ohm - 16A TO-220 MESH OVERLAY MOSFET
Power Field-Effect Transistor, 16A I(D), 250V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220; Transistor Polarity: N Channel; Continuous Drain Current Id: 16A; Drain Source Voltage Vds: 250V; On Resistance Rds(on): 0.28ohm; Rds(on) Test Voltage Vgs: -; Threshold Voltage Vgs: 3V; Power Dissipation Pd:
MOSFET, N, TO-220; Transistor type:MOSFET; Voltage, Vds typ:250V; Current, Id cont:16A; Resistance, Rds on:0.28R; Voltage, Vgs Rds on measurement:10V; Voltage, Vgs th typ:3V; Case style:TO-220 (SOT-78B); Capacitance, Ciss typ:1270pF; RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STP16NS25.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Subcategory

Voltage - Rated DC

Technology

Peak Reflow Temperature (Cel)

Reach Compliance Code

Current Rating

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

Qualification Status

Number of Elements

Power Dissipation-Max

Element Configuration

Operating Mode

Power Dissipation

FET Type

Transistor Application

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Continuous Drain Current (ID)

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain-source On Resistance-Max

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

RoHS Status

Lifecycle Status

JESD-30 Code

Radiation Hardening

Factory Lead Time

Resistance

Additional Feature

Number of Channels

Case Connection

Turn On Delay Time

Threshold Voltage

Max Junction Temperature (Tj)

Height

Length

Width

Lead Free

Turn-Off Delay Time

REACH SVHC

View Compare
STP16NS25

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-65°C~150°C TJ

Tube

MESH OVERLAY™

e3

Obsolete

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

250V

MOSFET (Metal Oxide)

NOT SPECIFIED

not_compliant

16A

NOT SPECIFIED

STP16N

3

Not Qualified

1

140W Tc

Single

ENHANCEMENT MODE

140W

N-Channel

SWITCHING

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

26ns

10V

±20V

32 ns

16A

TO-220AB

20V

0.28Ohm

250V

64A

600 mJ

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP180NS04ZC

STMicroelectronics

Through Hole

Through Hole

TO-220-3

-

SILICON

-55°C~175°C TJ

Tube

SAFeFET™

e3

Not For New Designs

1 (Unlimited)

3

EAR99

Matte Tin (Sn)

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP180

3

-

1

330W Tc

Single

ENHANCEMENT MODE

300W

N-Channel

SWITCHING

4.2m Ω @ 40A, 10V

4V @ 1mA

4560pF @ 25V

120A Tc

110nC @ 10V

250ns

10V

±20V

115 ns

120A

TO-220AB

20V

0.0042Ohm

33V

480A

-

ROHS3 Compliant

NRND (Last Updated: 8 months ago)

R-PSFM-T3

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STP16NS25 vs STP180NS04ZC
STP12NM50FP

STMicroelectronics

Through Hole

Through Hole

TO-220-3 Full Pack

3

SILICON

-65°C~150°C TJ

Tube

MDmesh™

e3

Active

1 (Unlimited)

3

-

Matte Tin (Sn) - annealed

FET General Purpose Power

500V

MOSFET (Metal Oxide)

-

-

12A

-

STP12

3

-

1

35W Tc

Single

ENHANCEMENT MODE

35W

N-Channel

SWITCHING

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

12A

TO-220AB

30V

-

500V

48A

400 mJ

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

-

No

16 Weeks

350mOhm

AVALANCHE RATED

1

ISOLATED

20 ns

4V

150°C

20mm

10.4mm

4.6mm

Lead Free

-

-

STP16NS25 vs STP12NM50FP
STP18NM60N

STMicroelectronics

Through Hole

Through Hole

TO-220-3

3

SILICON

-55°C~150°C TJ

Tube

MDmesh™ II

-

Active

1 (Unlimited)

3

EAR99

-

FET General Purpose Power

-

MOSFET (Metal Oxide)

-

-

-

-

STP18N

3

-

1

110W Tc

Single

ENHANCEMENT MODE

110W

N-Channel

SWITCHING

285m Ω @ 6.5A, 10V

4V @ 250μA

1000pF @ 50V

13A Tc

35nC @ 10V

15ns

10V

±25V

25 ns

13A

TO-220AB

25V

-

600V

52A

-

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

-

No

16 Weeks

285mOhm

-

-

-

12 ns

3V

-

15.75mm

10.4mm

4.6mm

Lead Free

55 ns

No SVHC

STP16NS25 vs STP18NM60N