STMicroelectronics STP16N60M2

Name: STP16N60M2
Brand: STMicroelectronics
SKU: 2849797-STP16N60M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP16N60M2

Manufacturer:: STMicroelectronics

Ventron No:: 2849797-STP16N60M2

Description:: MOSFET N-CH 600V 12A TO-220AB

ECAD Model:

Datasheet:: STP16N60M2

Specifications

STMicroelectronics STP16N60M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP16N60M2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Operating Temperature
150°C TJ
Packaging
Tube
Series
MDmesh™ M2
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Subcategory
FET General Purpose Power
Technology
MOSFET (Metal Oxide)
Base Part Number
STP16N
Configuration
Single
Power Dissipation-Max
110W Tc
Operating Mode
ENHANCEMENT MODE
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
320m Ω @ 6A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
700pF @ 100V
Current - Continuous Drain (Id) @ 25°C
12A Tc
Gate Charge (Qg) (Max) @ Vgs
19nC @ 10V
Drain to Source Voltage (Vdss)
600V
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Continuous Drain Current (ID)
12A
RoHS Status
ROHS3 Compliant

Description

STP16N60M2 Overview
The input capacitance parameter, CI, is defined as the capacitance between the input terminals of an op amp with either input grounded, and this device's maximal input capacitance is 700pF @ 100V.The drain current is the maximum continuous current the device can conduct, and the continuous drain current (ID) of this device is 12A. Operating this transistor requires a 600V drain to source voltage (Vdss).By using drive voltage (10V), this device helps reduce its overall power consumption.

STP16N60M2 Features
a continuous drain current (ID) of 12A
a 600V drain to source voltage (Vdss)

STP16N60M2 Applications
There are a lot of STMicroelectronics
STP16N60M2 applications of single MOSFETs transistors.

LCD/LED TV
Consumer Appliances
Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools

STP16N60M2 More Descriptions

N-channel 600 V, 0.28 Ohm typ., 12 A MDmesh M2 Power MOSFET in TO-220 package
Power Field-Effect Transistor, 12A I(D), 1-Element, N-Channel, Metal-oxide Semiconductor FET
Trans MOSFET N-CH 600V 12A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N-CH, 600V, 12A, TO-220; Channel Type:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:12A; Transistor Mounting:Through Hole; Rds(on) Test Voltage:10V; Gate Source Threshold Voltage Max:3V RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STP16N60M2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Subcategory

Technology

Base Part Number

Configuration

Power Dissipation-Max

Operating Mode

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Drain to Source Voltage (Vdss)

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Continuous Drain Current (ID)

RoHS Status

Number of Pins

Transistor Element Material

JESD-609 Code

Pbfree Code

Number of Terminations

Resistance

Terminal Finish

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Element Configuration

Power Dissipation

Turn On Delay Time

Transistor Application

Rise Time

Fall Time (Typ)

Turn-Off Delay Time

Threshold Voltage

JEDEC-95 Code

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

Pulsed Drain Current-Max (IDM)

Height

Length

Width

REACH SVHC

Radiation Hardening

Lead Free

Peak Reflow Temperature (Cel)

Reach Compliance Code

Time@Peak Reflow Temperature-Max (s)

Qualification Status

Drain-source On Resistance-Max

Avalanche Energy Rating (Eas)

Additional Feature

Number of Channels

Case Connection

Max Junction Temperature (Tj)

View Compare
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

MDmesh™ M2

Active

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

Single

110W Tc

ENHANCEMENT MODE

N-Channel

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

600V

10V

±25V

12A

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP16NK60Z

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

150°C TJ

Tube

SuperMESH™

Obsolete

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

-

190W Tc

ENHANCEMENT MODE

N-Channel

420m Ω @ 7A, 10V

4.5V @ 50μA

2650pF @ 25V

14A Tc

86nC @ 10V

-

10V

±30V

14A

ROHS3 Compliant

3

SILICON

e3

yes

3

38Ohm

Matte Tin (Sn)

600V

14A

3

1

Single

190W

30 ns

SWITCHING

25ns

15 ns

70 ns

3.75V

TO-220AB

30V

600V

56A

15.75mm

10.4mm

4.6mm

No SVHC

No

Lead Free

-

-

-

-

-

-

-

-

-

-

STP16N60M2 vs STP16NK60Z
STP16NS25

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-65°C~150°C TJ

Tube

MESH OVERLAY™

Obsolete

1 (Unlimited)

EAR99

FET General Purpose Power

MOSFET (Metal Oxide)

STP16N

-

140W Tc

ENHANCEMENT MODE

N-Channel

280m Ω @ 8A, 10V

4V @ 250μA

1270pF @ 25V

16A Tc

83nC @ 10V

-

10V

±20V

16A

ROHS3 Compliant

3

SILICON

e3

-

3

-

Matte Tin (Sn)

250V

16A

3

1

Single

140W

-

SWITCHING

26ns

32 ns

-

-

TO-220AB

20V

250V

64A

-

-

-

-

-

-

NOT SPECIFIED

not_compliant

NOT SPECIFIED

Not Qualified

0.28Ohm

600 mJ

-

-

-

-

STP16N60M2 vs STP16NS25
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

-65°C~150°C TJ

Tube

MDmesh™

Active

1 (Unlimited)

-

FET General Purpose Power

MOSFET (Metal Oxide)

STP12

-

35W Tc

ENHANCEMENT MODE

N-Channel

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

-

10V

±30V

12A

ROHS3 Compliant

3

SILICON

e3

-

3

350mOhm

Matte Tin (Sn) - annealed

500V

12A

3

1

Single

35W

20 ns

SWITCHING

10ns

-

-

4V

TO-220AB

30V

500V

48A

20mm

10.4mm

4.6mm

-

No

Lead Free

-

-

-

-

-

400 mJ

AVALANCHE RATED

1

ISOLATED

150°C

STP16N60M2 vs STP12NM50FP