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STP12NM50FP

STMicroelectronics STP12NM50FP

Part Number:
STP12NM50FP
Manufacturer:
STMicroelectronics
Ventron No:
2850010-STP12NM50FP
Description:
MOSFET N-CH 500V 12A TO220FP
ECAD Model:
Datasheet:
STP12NM50FP

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Specifications
STMicroelectronics STP12NM50FP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP12NM50FP.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Resistance
    350mOhm
  • Terminal Finish
    Matte Tin (Sn) - annealed
  • Additional Feature
    AVALANCHE RATED
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    500V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    12A
  • Base Part Number
    STP12
  • Pin Count
    3
  • Number of Elements
    1
  • Number of Channels
    1
  • Power Dissipation-Max
    35W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    35W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    350m Ω @ 6A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 50μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    12A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    39nC @ 10V
  • Rise Time
    10ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Continuous Drain Current (ID)
    12A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    500V
  • Pulsed Drain Current-Max (IDM)
    48A
  • Avalanche Energy Rating (Eas)
    400 mJ
  • Max Junction Temperature (Tj)
    150°C
  • Height
    20mm
  • Length
    10.4mm
  • Width
    4.6mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP12NM50FP Description   STP12NM50FP N-Channel MOSFET is designed for various applications, including switched-mode power supplies, active power factor correction, and electronic lamp ballasts. STP12NM50FP MOSFET is ideally suitable for reducing on-state resistance and providing superior switching performance as well as high avalanche energy strength. STP12NM50FP STMicroelectronics is ideally suitable for high-voltage applications where current is not an important factor.     STP12NM50FP Features   Ultra-Low Qg and Qgd Low Thermal Resistance Avalanche Rated Pb-Free Terminal Plating RoHS Compliant Halogen Free     STP12NM50FP Applications   Primary Side Telecom Secondary Side Synchronous Rectifier Motor Control
STP12NM50FP More Descriptions
N-Channel 550 V 0.35 Ohm Flange Mount MDmesh™ Power MosFet - TO-220FP
Transistor NPN Mos STP12NM50/STP12NM50FP SGS THOMSON Ampere=12 V=500 TO220
Trans MOSFET N-CH 500V 12A 3-Pin(3 Tab) TO-220FP Tube
N-Channel 500V - 0.30 Ohm - 12A - TO-220FP MDmesh(TM) POWER MOSFETCiiva Crawler
Transistor Polarity:n Channel; Drain Source Voltage Vds:550V; Continuous Drain Current Id:12A; On Resistance Rds(On):0.35Ohm; Transistor Mounting:through Hole; Rds(On) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; No. Of Pins:3Pinsrohs Compliant: Yes
Power Field-Effect Transistor, 12A I(D), 500V, 0.35ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
Product Comparison
The three parts on the right have similar specifications to STP12NM50FP.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Resistance
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Number of Channels
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    ECCN Code
    JESD-30 Code
    Fall Time (Typ)
    Drain-source On Resistance-Max
    Turn-Off Delay Time
    REACH SVHC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    View Compare
  • STP12NM50FP
    STP12NM50FP
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    Active
    1 (Unlimited)
    3
    350mOhm
    Matte Tin (Sn) - annealed
    AVALANCHE RATED
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    12A
    STP12
    3
    1
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    ISOLATED
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    10V
    ±30V
    12A
    4V
    TO-220AB
    30V
    500V
    48A
    400 mJ
    150°C
    20mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP180NS04ZC
    STP180NS04ZC
    STMicroelectronics
    NRND (Last Updated: 8 months ago)
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    SAFeFET™
    e3
    Not For New Designs
    1 (Unlimited)
    3
    -
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP180
    3
    1
    -
    330W Tc
    Single
    ENHANCEMENT MODE
    300W
    -
    -
    N-Channel
    SWITCHING
    4.2m Ω @ 40A, 10V
    4V @ 1mA
    4560pF @ 25V
    120A Tc
    110nC @ 10V
    250ns
    10V
    ±20V
    120A
    -
    TO-220AB
    20V
    33V
    480A
    -
    -
    -
    -
    -
    No
    ROHS3 Compliant
    -
    EAR99
    R-PSFM-T3
    115 ns
    0.0042Ohm
    -
    -
    -
    -
    -
    -
    STP12NM50FP vs STP180NS04ZC
  • STP18NM60N
    STP18NM60N
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    -
    Active
    1 (Unlimited)
    3
    285mOhm
    -
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP18N
    3
    1
    -
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    -
    12 ns
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    15ns
    10V
    ±25V
    13A
    3V
    TO-220AB
    25V
    600V
    52A
    -
    -
    15.75mm
    10.4mm
    4.6mm
    No
    ROHS3 Compliant
    Lead Free
    EAR99
    -
    25 ns
    -
    55 ns
    No SVHC
    -
    -
    -
    -
    STP12NM50FP vs STP18NM60N
  • STP150N3LLH6
    STP150N3LLH6
    STMicroelectronics
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    -
    SILICON
    -55°C~175°C TJ
    Tube
    DeepGATE™, STripFET™ VI
    e3
    Obsolete
    1 (Unlimited)
    3
    3.3MOhm
    Matte Tin (Sn)
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP150
    3
    1
    -
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    DRAIN
    -
    N-Channel
    SWITCHING
    3.3m Ω @ 40A, 10V
    2.5V @ 250μA
    4040pF @ 25V
    80A Tc
    40nC @ 4.5V
    18ns
    4.5V 10V
    ±20V
    80A
    -
    TO-220AB
    20V
    30V
    320A
    525 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    Lead Free
    EAR99
    R-PSFM-T3
    46 ns
    -
    75 ns
    -
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    Not Qualified
    STP12NM50FP vs STP150N3LLH6
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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