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STP11NM60

STMicroelectronics STP11NM60

Part Number:
STP11NM60
Manufacturer:
STMicroelectronics
Ventron No:
2484812-STP11NM60
Description:
MOSFET N-CH 650V 11A TO-220
ECAD Model:
Datasheet:
STP11NM60

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Specifications
STMicroelectronics STP11NM60 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP11NM60.
  • Lifecycle Status
    NRND (Last Updated: 8 months ago)
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -65°C~150°C TJ
  • Packaging
    Tube
  • Series
    MDmesh™
  • JESD-609 Code
    e3
  • Part Status
    Not For New Designs
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    450mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Voltage - Rated DC
    600V
  • Technology
    MOSFET (Metal Oxide)
  • Current Rating
    11A
  • Base Part Number
    STP11N
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    160W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    160W
  • Turn On Delay Time
    20 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    450m Ω @ 5.5A, 10V
  • Vgs(th) (Max) @ Id
    5V @ 250μA
  • Input Capacitance (Ciss) (Max) @ Vds
    1000pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    11A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    30nC @ 10V
  • Rise Time
    20ns
  • Drain to Source Voltage (Vdss)
    650V
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±25V
  • Fall Time (Typ)
    11 ns
  • Turn-Off Delay Time
    6 ns
  • Continuous Drain Current (ID)
    11A
  • Threshold Voltage
    4V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain to Source Breakdown Voltage
    600V
  • Pulsed Drain Current-Max (IDM)
    44A
  • Height
    6.35mm
  • Length
    31.75mm
  • Width
    12.7mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP11NM60 Description These STP11NM60 are N-channel Power MOSFETs developed using the second generation of MDmesh? technology. These revolutionary Power MOSFETs associate a vertical structure to the company’s strip layout to yield one of the world's lowest on-resistance and gate charges. STP11NM60 MOSFETs are therefore suitable for the most demanding high-efficiency converters.
STP11NM60 Features 100% avalanche tested
Low gate input resistance
Low input capacitance and gate charge
STP11NM60 Applications power supplies
Motor controls
DC choppers
Switch-mode and resonant-mode
Uninterruptible Power Supplies (UPS)
STP11NM60 More Descriptions
N-channel 600 V, 0.4 Ohm, 11 A, TO-220, TO-220FP MDmesh(TM) Power MOSFET
N-Channel 650 V 0.45 Ohm Flange Mount MDmesh™ Power MosFet - TO-220
Trans MOSFET N-CH 600V 11A 3-Pin(3 Tab) TO-220AB Tube
Power Field-Effect Transistor, 11A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
N Channel Mosfet, 650V, 11A, To-220; Channel Type:N Channel; Drain Source Voltage Vds:650V; Continuous Drain Current Id:11A; Transistor Mounting:Through Hole; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:4V; Msl:- Rohs Compliant: Yes |Stmicroelectronics STP11NM60
Product Comparison
The three parts on the right have similar specifications to STP11NM60.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Voltage - Rated DC
    Technology
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drain to Source Voltage (Vdss)
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain to Source Breakdown Voltage
    Pulsed Drain Current-Max (IDM)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Factory Lead Time
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Number of Channels
    Case Connection
    Avalanche Energy Rating (Eas)
    Max Junction Temperature (Tj)
    View Compare
  • STP11NM60
    STP11NM60
    STMicroelectronics
    NRND (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    4.535924g
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    Not For New Designs
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    11A
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    1000pF @ 25V
    11A Tc
    30nC @ 10V
    20ns
    650V
    10V
    ±25V
    11 ns
    6 ns
    11A
    4V
    TO-220AB
    30V
    600V
    44A
    6.35mm
    31.75mm
    12.7mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP11NM60FD
    STP11NM60FD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -
    Tube
    FDmesh™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    600V
    MOSFET (Metal Oxide)
    11A
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    -
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    600V
    44A
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    16 Weeks
    150°C
    -65°C
    AVALANCHE RATED
    -
    -
    -
    -
    STP11NM60 vs STP11NM60FD
  • STP12NM50FP
    STP12NM50FP
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    MDmesh™
    e3
    Active
    1 (Unlimited)
    3
    -
    350mOhm
    Matte Tin (Sn) - annealed
    FET General Purpose Power
    500V
    MOSFET (Metal Oxide)
    12A
    STP12
    3
    1
    35W Tc
    Single
    ENHANCEMENT MODE
    35W
    20 ns
    N-Channel
    SWITCHING
    350m Ω @ 6A, 10V
    5V @ 50μA
    1000pF @ 25V
    12A Tc
    39nC @ 10V
    10ns
    -
    10V
    ±30V
    -
    -
    12A
    4V
    TO-220AB
    30V
    500V
    48A
    20mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    16 Weeks
    -
    -
    AVALANCHE RATED
    1
    ISOLATED
    400 mJ
    150°C
    STP11NM60 vs STP12NM50FP
  • STP18NM60N
    STP18NM60N
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -55°C~150°C TJ
    Tube
    MDmesh™ II
    -
    Active
    1 (Unlimited)
    3
    EAR99
    285mOhm
    -
    FET General Purpose Power
    -
    MOSFET (Metal Oxide)
    -
    STP18N
    3
    1
    110W Tc
    Single
    ENHANCEMENT MODE
    110W
    12 ns
    N-Channel
    SWITCHING
    285m Ω @ 6.5A, 10V
    4V @ 250μA
    1000pF @ 50V
    13A Tc
    35nC @ 10V
    15ns
    -
    10V
    ±25V
    25 ns
    55 ns
    13A
    3V
    TO-220AB
    25V
    600V
    52A
    15.75mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    16 Weeks
    -
    -
    -
    -
    -
    -
    -
    STP11NM60 vs STP18NM60N
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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