STMicroelectronics STP11N65M2

Name: STP11N65M2
Brand: STMicroelectronics
SKU: 2849614-STP11N65M2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STP11N65M2

Manufacturer:: STMicroelectronics

Ventron No:: 2849614-STP11N65M2

Description:: MOSFET N-CH 650V 7A TO-220AB

ECAD Model:

Datasheet:: STP11N65M2

Specifications

STMicroelectronics STP11N65M2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP11N65M2.

Lifecycle Status
ACTIVE (Last Updated: 7 months ago)
Factory Lead Time
16 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Weight
329.988449mg
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Series
MDmesh™ II Plus
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Technology
MOSFET (Metal Oxide)
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STP11N
Number of Channels
1
Power Dissipation-Max
85W Tc
Turn On Delay Time
9.5 ns
FET Type
N-Channel
Rds On (Max) @ Id, Vgs
670m Ω @ 3.5A, 10V
Vgs(th) (Max) @ Id
4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds
410pF @ 100V
Current - Continuous Drain (Id) @ 25°C
7A Tc
Gate Charge (Qg) (Max) @ Vgs
12.5nC @ 10V
Rise Time
7.5ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±25V
Fall Time (Typ)
15 ns
Turn-Off Delay Time
26 ns
Continuous Drain Current (ID)
7A
Threshold Voltage
3V
Gate to Source Voltage (Vgs)
25V
Drain to Source Breakdown Voltage
650V
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

STP11N65M2 Overview
With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 410pF @ 100V.A device's drain current is its maximum continuous current, and this device has a continuous drain current (ID) of 7A.With a drain-source breakdown voltage of 650V and a drain-source current flow rate of 1, this device has a drain-source breakdown voltage of 650V.The turn-off delay time is the amount of time it takes to charge the input capacitance of the device before drain current conduction can begin, and it is 26 ns.Input capacitance charging takes time before drain current conduction begins, so the turn-on delay time is 9.5 ns.Single MOSFETs transistor is the voltage that falls across the gate-source terminal of a FET transistor that is called the gate-source voltage, VGS.3V is the threshold voltage at which an electrical device activates any of its operations.Using drive voltage (10V) reduces this device's overall power consumption.

STP11N65M2 Features
a continuous drain current (ID) of 7A
a drain-to-source breakdown voltage of 650V voltage
the turn-off delay time is 26 ns
a threshold voltage of 3V

STP11N65M2 Applications
There are a lot of STMicroelectronics
STP11N65M2 applications of single MOSFETs transistors.

Lighting
Uninterruptible Power Supply
AC-DC Power Supply
Synchronous Rectification for ATX 1 Server I Telecom PSU
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification

STP11N65M2 More Descriptions

N-channel 650 V, 0.6 Ohm typ., 7 A MDmesh M2 Power MOSFET in TO-220 package
Low Power, Wideband, Voltage Feedback Operational Amplifier with Disable 6-SOT-23 -40 to 85
Trans MOSFET N-CH 650V 7A 3-Pin(3 Tab) TO-220AB Tube
MOSFET, N CHANNEL, 650V, 7A, TO-220-3; Transistor Polarity:N Channel; Continuous Drain Current Id:7A; Source Voltage Vds:650V; On Resistance
Power Field-Effect Transistor, 7A I(D), 650V, 0.68ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N CHANNEL, 650V, 7A, TO-220-3; Transistor Polarity: N Channel; Continuous Drain Current Id: 7A; Drain Source Voltage Vds: 650V; On Resistance Rds(on): 0.6ohm; Rds(on) Test Voltage Vgs: 10V; Threshold Voltage Vgs: 3V; Power Dissipation Pd: 85W; Transistor Case Style: TO-220; No. of Pins: 3Pins; Operating Temperature Max: 150°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STP11N65M2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mount

Mounting Type

Package / Case

Number of Pins

Weight

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

ECCN Code

Technology

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Number of Channels

Power Dissipation-Max

Turn On Delay Time

FET Type

Rds On (Max) @ Id, Vgs

Vgs(th) (Max) @ Id

Input Capacitance (Ciss) (Max) @ Vds

Current - Continuous Drain (Id) @ 25°C

Gate Charge (Qg) (Max) @ Vgs

Rise Time

Drive Voltage (Max Rds On,Min Rds On)

Vgs (Max)

Fall Time (Typ)

Turn-Off Delay Time

Continuous Drain Current (ID)

Threshold Voltage

Gate to Source Voltage (Vgs)

Drain to Source Breakdown Voltage

REACH SVHC

RoHS Status

Transistor Element Material

JESD-609 Code

Number of Terminations

Resistance

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Element Configuration

Operating Mode

Power Dissipation

Case Connection

Transistor Application

JEDEC-95 Code

Pulsed Drain Current-Max (IDM)

Avalanche Energy Rating (Eas)

Max Junction Temperature (Tj)

Height

Length

Width

Radiation Hardening

Lead Free

Configuration

Drain to Source Voltage (Vdss)

Reach Compliance Code

JESD-30 Code

Qualification Status

View Compare
STP11N65M2

STMicroelectronics

ACTIVE (Last Updated: 7 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

3

329.988449mg

-55°C~150°C TJ

Tube

MDmesh™ II Plus

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP11N

1

85W Tc

9.5 ns

N-Channel

670m Ω @ 3.5A, 10V

4V @ 250μA

410pF @ 100V

7A Tc

12.5nC @ 10V

7.5ns

10V

±25V

15 ns

26 ns

7A

3V

25V

650V

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STP12NM50FP

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3 Full Pack

3

-

-65°C~150°C TJ

Tube

MDmesh™

Active

1 (Unlimited)

-

MOSFET (Metal Oxide)

-

-

STP12

1

35W Tc

20 ns

N-Channel

350m Ω @ 6A, 10V

5V @ 50μA

1000pF @ 25V

12A Tc

39nC @ 10V

10ns

10V

±30V

-

-

12A

4V

30V

500V

-

ROHS3 Compliant

SILICON

e3

3

350mOhm

Matte Tin (Sn) - annealed

AVALANCHE RATED

FET General Purpose Power

500V

12A

3

1

Single

ENHANCEMENT MODE

35W

ISOLATED

SWITCHING

TO-220AB

48A

400 mJ

150°C

20mm

10.4mm

4.6mm

No

Lead Free

-

-

-

-

-

STP11N65M2 vs STP12NM50FP
STP16N60M2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

16 Weeks

Through Hole

Through Hole

TO-220-3

-

-

150°C TJ

Tube

MDmesh™ M2

Active

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

-

-

STP16N

-

110W Tc

-

N-Channel

320m Ω @ 6A, 10V

4V @ 250μA

700pF @ 100V

12A Tc

19nC @ 10V

-

10V

±25V

-

-

12A

-

-

-

-

ROHS3 Compliant

-

-

-

-

-

-

FET General Purpose Power

-

-

-

-

-

ENHANCEMENT MODE

-

-

-

-

-

-

-

-

-

-

-

-

Single

600V

-

-

-

STP11N65M2 vs STP16N60M2
STP150N3LLH6

STMicroelectronics

-

-

Through Hole

Through Hole

TO-220-3

-

-

-55°C~175°C TJ

Tube

DeepGATE™, STripFET™ VI

Obsolete

1 (Unlimited)

EAR99

MOSFET (Metal Oxide)

NOT SPECIFIED

NOT SPECIFIED

STP150

-

110W Tc

-

N-Channel

3.3m Ω @ 40A, 10V

2.5V @ 250μA

4040pF @ 25V

80A Tc

40nC @ 4.5V

18ns

4.5V 10V

±20V

46 ns

75 ns

80A

-

20V

30V

-

ROHS3 Compliant

SILICON

e3

3

3.3MOhm

Matte Tin (Sn)

-

FET General Purpose Power

-

-

3

1

Single

ENHANCEMENT MODE

110W

DRAIN

SWITCHING

TO-220AB

320A

525 mJ

-

-

-

-

-

Lead Free

-

-

not_compliant

R-PSFM-T3

Not Qualified

STP11N65M2 vs STP150N3LLH6