IR2110 MOSFET Driver Functions, Features, Working Principle and IR2110 vs IR2113
25 March 2024
Ⅲ. Functional block diagram of IR2110
Ⅴ. Working principle of IR2110
Ⅶ. What is the difference between IR2110 and IR2113?
Ⅷ. How to use IR2110 to drive a single MOSFET tube?
IR2110 is a high-power MOSFET and IGBT dedicated gate drive integrated circuit developed and put on the market around 1990 by American International Rectifier Company using its unique high-voltage integrated circuit and door-free CMOS technology. It has been widely used in power drive fields such as power conversion and motor speed regulation. Below we will introduce the characteristics, functions, working principle and applications of IR2110 in detail.
IR2110 is a monolithic integrated driver module that integrates dual-channel, gate driver, high-voltage and high-speed power devices. Due to its small size, low cost, high integration, fast response, high bias voltage, and strong driving capability, this kind of bootstrap integrated circuit has been widely used in motor speed regulation, power conversion and other power applications since its introduction. In the field of driving, it is especially suitable for driving power MOSFET and IGBT. IR2110 uses advanced bootstrap circuit and level conversion technology, which greatly simplifies the control requirements of power devices by logic circuits, allowing each pair of MOSFETs (upper and lower transistors) to share an IR2110, and all IR2110s can share an independent power supply. For a typical three-phase bridge inverter composed of 6 tubes, only 3 pieces of IR2110 can be used to drive 3 bridge arms, and only one 10V to 20V power supply is needed. Such a design significantly reduces the size of the drive circuit and the number of power supplies in engineering applications, simplifies the system structure, and thereby improves the reliability of the system.
Alternatives and equivalents:
• IR2110L4
IR2110 has the following main functions:
• Dual input signals, supporting four different control modes
• Strong anti-interference ability and electromagnetic compatibility, can adapt to a variety of harsh operating environments
• Built-in charge pump circuit to provide high side driving voltage to enhance the output capability
• Support high-voltage, high-speed drive, can drive IGBT, MOSFET and other power switching tubes
• Built-in short-circuit protection, over-temperature protection, over-voltage protection, under-voltage protection and over-current protection and other protection mechanisms
• dv/dt immune
• Outputs in phase with inputs
• Undervoltage lockout for both channels
• Gate drive supply range from 10V to 20 V
• Logic and power ground + /- 5 V offset
• 3.3 V logic compatible
• Separate logic supply range from 3.3 V to 20 V
• Fully operational to +500 V
• Fully operational to +600 V version available (IR2113)
• Cycle by cycle edge-triggered shutdown logic
• CMOS Schmitt-triggered inputs with pull-down
• Matched propagation delay for both channels
• Floating channel designed for bootstrap operation
IR2110 mainly consists of three parts: level conversion, logic input and output protection. The reason why IR2110 is so popular is that its many advantages enable it to avoid many problems when building and designing system circuits. For example, in the design of high-voltage floating bootstrap power supply circuits, IR2110 can effectively control the high and low ports, thereby greatly reducing the number of additional driving power supplies required. The figure below shows the driving half-bridge circuit of the IR2110 driver chip. It simply and clearly demonstrates the bootstrapping principle of the high-side suspension driving circuit. Among them, C1 is the bootstrap capacitor, VD1 is the bootstrap diode, and C2 is the filter capacitor for the power supply voltage Vcc.
First, it is expected that bootstrap capacitor C1 can withstand the voltage of Vcc when S1 is turned off. When VM1 is on, VM2 is off, and HIN is high, the VC1 voltage is applied between the gate and source (or emitter) of S1. Subsequently, the bootstrap capacitor C1 will be discharged through a loop formed by Rg1, VM1, gate and source, making VC1 equal to the voltage source, thus triggering S1 to turn on.
On the other hand, the signals between HIN and LIN are considered complementary inputs. When LIN is low, VM3 is disabled and VM4 is enabled. At this time, the charge will be quickly released to the ground through the Rg2 in the S2 gate and the chip inside the source. Electricity is an energy source, and during this process, dead time will have an impact, ensuring that S2 is turned off before S1 is turned on.
When HIN is low, VM1 is turned off and VM2 is turned on. At this time, the charge in the gate of S1 will be quickly discharged through Rg1 and VM2, causing S1 to turn off. After a short dead time (td), LIN rises to high level, causing S2 to turn on. At this time, the power supply voltage Vcc charges the bootstrap capacitor C1 through S2 and VD1, causing the power of the bootstrap capacitor C1 to increase rapidly. This process will be repeated continuously, forming a cycle.
• White goods
• Space and satellite communications systems
• DC motor driver
• Battery management system (BMS)
• Pure sine wave inverter
IR2110 and IR2113 are both driver chips produced by Infineon for driving power switches such as MOSFETs and IGBTs. They are used in power electronics applications to control and protect switching elements in circuits. Although their basic functions are similar, there are some differences in certain aspects. The following are some of the major differences between the IR2110 and IR2113:
1. Main applications
The IR2110 is commonly used in high power inverters, AC drives and motor drives due to its high drive capability and suitability for high power applications. While IR2113 is suitable for small and medium power applications such as light duty inverters, LED drivers, etc.
2. Pin function
The IR2110 has an input pin for dead-time control, which allows you to set the delay between the high-side and low-side switching elements to avoid cross-conduction. However, the IR2113 does not have a dedicated dead-time control pin, but a similar function can be realized with external circuitry.
3. Pinout and circuit layout
The lR2110 has a relatively complex pinout due to its dual-channel structure, requiring more external components to configure the upper and lower half-bridge circuits. lR2113 has a relatively simple pinout due to its three-channel structure, making it suitable for more simplified driver circuits.
4. Output driving capability
IR2110 can provide high driving current in the output stage, which is suitable for driving high power switching components. IR2113 has relatively low output capability, which is suitable for small and medium power switching components.
5. Number of output channels
IR2110 is a two-channel driver with two independent output channels for driving upper and lower half-bridge switching elements. IR2113 is a three-channel driver with three output channels, two of which are used for high-side and low-side switching elements, and the other for optional high-side or low-side power supplies.
The basic steps for using IR2110 to drive a single MOSFET are as follows. First, we connect the VCC pin to a 5V or 12V power supply and the COM pin to ground. Next, we connect the source of the MOSFET to the power ground and the drain to the load of the circuit. We then connect the gate of the MOSFET to one of the HO or LO pins of the IR2110, while the other pin needs to be connected to the power ground. According to the specific needs of the circuit, we can optimize the circuit performance by adjusting the RC delay time, duty cycle and other parameters of IR2110. In order to protect the MOSFET and IR2110, we should add overcurrent, overvoltage, overtemperature and other protection mechanisms to the circuit.
Please note that although the driving circuit of a single MOSFET tube seems simple, it still needs to be carefully designed according to specific circuit requirements and application scenarios to ensure the stability and reliability of the circuit. In addition, during operation, we should strictly abide by safety regulations and operating procedures, and beware of potential safety hazards such as electric shock and short circuit.
Frequently Asked Questions
1. What is IR2110 MOSFET?
The IR2110/IR2113 are high voltage, high speed power MOSFET and IGBT drivers with independent high and low side referenced output chan- nels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output, down to 3.3V logic.
2. What is the output voltage of IR2110?
The operating supply voltage range for IR2110 is 10 to 20 volt and the output current is 2.5A. IR2210 can withstand voltage up to 500v (offset voltage). Its output pins can provide a peak current of up to 2 amperes.
3. Why is IR2110 used?
IR2110 is the most popular high and low side driver IC. Logic inputs of this IC are compatible with standard CMOS or LSTTL outputs. The output drivers feature a high pulse current buffer stage designed for minimum driver cross-conduction. The maximum output current for this IC is 2.5A and supply current is 340µA.
4. Why do we need MOSFET drivers?
Gate drivers are beneficial to MOSFET operation because the high-current drive provided to the MOSFET gate decreases the switching time between the gate ON/OFF stages which leads to increased MOSFET power and thermal efficiency.
