STMicroelectronics STP10NK80ZFP
- Part Number:
- STP10NK80ZFP
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2480002-STP10NK80ZFP
- Description:
- MOSFET N-CH 800V 9A TO-220FP
- Datasheet:
- STP10NK80ZFP
STMicroelectronics STP10NK80ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NK80ZFP.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time12 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-220-3 Full Pack
- Number of Pins3
- Weight4.535924g
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesSuperMESH™
- JESD-609 Codee3
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- Resistance900mOhm
- Terminal FinishMatte Tin (Sn)
- SubcategoryFET General Purpose Power
- TechnologyMOSFET (Metal Oxide)
- Base Part NumberSTP10
- Pin Count3
- Number of Elements1
- Power Dissipation-Max40W Tc
- Element ConfigurationSingle
- Operating ModeENHANCEMENT MODE
- Power Dissipation40W
- Case ConnectionISOLATED
- Turn On Delay Time30 ns
- FET TypeN-Channel
- Transistor ApplicationSWITCHING
- Rds On (Max) @ Id, Vgs900m Ω @ 4.5A, 10V
- Vgs(th) (Max) @ Id4.5V @ 100μA
- Input Capacitance (Ciss) (Max) @ Vds2180pF @ 25V
- Current - Continuous Drain (Id) @ 25°C9A Tc
- Gate Charge (Qg) (Max) @ Vgs72nC @ 10V
- Rise Time20ns
- Drive Voltage (Max Rds On,Min Rds On)10V
- Vgs (Max)±30V
- Fall Time (Typ)17 ns
- Turn-Off Delay Time65 ns
- Continuous Drain Current (ID)9A
- Threshold Voltage3.75V
- JEDEC-95 CodeTO-220AB
- Gate to Source Voltage (Vgs)30V
- Drain Current-Max (Abs) (ID)9A
- Drain to Source Breakdown Voltage800V
- Avalanche Energy Rating (Eas)290 mJ
- Height9.3mm
- Length10.4mm
- Width4.6mm
- REACH SVHCNo SVHC
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STP10NK80ZFP Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 290 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2180pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP10NK80ZFP Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
a threshold voltage of 3.75V
STP10NK80ZFP Applications
There are a lot of STMicroelectronics
STP10NK80ZFP applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 290 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2180pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).
STP10NK80ZFP Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
a threshold voltage of 3.75V
STP10NK80ZFP Applications
There are a lot of STMicroelectronics
STP10NK80ZFP applications of single MOSFETs transistors.
Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STP10NK80ZFP More Descriptions
N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET
Trans MOSFET N-CH 800V 9A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
Trans MOSFET N-CH 800V 9A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
The three parts on the right have similar specifications to STP10NK80ZFP.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsWeightTransistor Element MaterialOperating TemperaturePackagingSeriesJESD-609 CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeResistanceTerminal FinishSubcategoryTechnologyBase Part NumberPin CountNumber of ElementsPower Dissipation-MaxElement ConfigurationOperating ModePower DissipationCase ConnectionTurn On Delay TimeFET TypeTransistor ApplicationRds On (Max) @ Id, VgsVgs(th) (Max) @ IdInput Capacitance (Ciss) (Max) @ VdsCurrent - Continuous Drain (Id) @ 25°CGate Charge (Qg) (Max) @ VgsRise TimeDrive Voltage (Max Rds On,Min Rds On)Vgs (Max)Fall Time (Typ)Turn-Off Delay TimeContinuous Drain Current (ID)Threshold VoltageJEDEC-95 CodeGate to Source Voltage (Vgs)Drain Current-Max (Abs) (ID)Drain to Source Breakdown VoltageAvalanche Energy Rating (Eas)HeightLengthWidthREACH SVHCRadiation HardeningRoHS StatusLead FreeVoltage - Rated DCPeak Reflow Temperature (Cel)Reach Compliance CodeCurrent RatingTime@Peak Reflow Temperature-Max (s)Qualification StatusDrain-source On Resistance-MaxPulsed Drain Current-Max (IDM)Max Operating TemperatureMin Operating TemperatureAdditional FeatureConfigurationDrain to Source Voltage (Vdss)View Compare
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STP10NK80ZFPACTIVE (Last Updated: 8 months ago)12 WeeksThrough HoleThrough HoleTO-220-3 Full Pack34.535924gSILICON-55°C~150°C TJTubeSuperMESH™e3Active1 (Unlimited)3EAR99900mOhmMatte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP103140W TcSingleENHANCEMENT MODE40WISOLATED30 nsN-ChannelSWITCHING900m Ω @ 4.5A, 10V4.5V @ 100μA2180pF @ 25V9A Tc72nC @ 10V20ns10V±30V17 ns65 ns9A3.75VTO-220AB30V9A800V290 mJ9.3mm10.4mm4.6mmNo SVHCNoROHS3 CompliantLead Free--------------
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--Through HoleThrough HoleTO-220-33-SILICON-65°C~150°C TJTubeMESH OVERLAY™e3Obsolete1 (Unlimited)3EAR99-Matte Tin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP16N31140W TcSingleENHANCEMENT MODE140W--N-ChannelSWITCHING280m Ω @ 8A, 10V4V @ 250μA1270pF @ 25V16A Tc83nC @ 10V26ns10V±20V32 ns-16A-TO-220AB20V-250V600 mJ-----ROHS3 Compliant-250VNOT SPECIFIEDnot_compliant16ANOT SPECIFIEDNot Qualified0.28Ohm64A-----
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ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-33---TubeFDmesh™e3Active1 (Unlimited)3EAR99450mOhmTin (Sn)FET General Purpose PowerMOSFET (Metal Oxide)STP11N31160W TcSingleENHANCEMENT MODE160W-20 nsN-ChannelSWITCHING450m Ω @ 5.5A, 10V5V @ 250μA900pF @ 25V11A Tc40nC @ 10V16ns10V±30V15 ns-11A-TO-220AB30V-600V-15.75mm10.4mm4.6mm-NoROHS3 CompliantLead Free600V--11A---44A150°C-65°CAVALANCHE RATED--
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ACTIVE (Last Updated: 8 months ago)16 WeeksThrough HoleThrough HoleTO-220-3---150°C TJTubeMDmesh™ M2-Active1 (Unlimited)-EAR99--FET General Purpose PowerMOSFET (Metal Oxide)STP16N--110W Tc-ENHANCEMENT MODE---N-Channel-320m Ω @ 6A, 10V4V @ 250μA700pF @ 100V12A Tc19nC @ 10V-10V±25V--12A-----------ROHS3 Compliant------------Single600V
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