STP10NK80ZFP

STMicroelectronics STP10NK80ZFP

Part Number:
STP10NK80ZFP
Manufacturer:
STMicroelectronics
Ventron No:
2480002-STP10NK80ZFP
Description:
MOSFET N-CH 800V 9A TO-220FP
ECAD Model:
Datasheet:
STP10NK80ZFP

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Specifications
STMicroelectronics STP10NK80ZFP technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STP10NK80ZFP.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    12 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3 Full Pack
  • Number of Pins
    3
  • Weight
    4.535924g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    SuperMESH™
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Resistance
    900mOhm
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    FET General Purpose Power
  • Technology
    MOSFET (Metal Oxide)
  • Base Part Number
    STP10
  • Pin Count
    3
  • Number of Elements
    1
  • Power Dissipation-Max
    40W Tc
  • Element Configuration
    Single
  • Operating Mode
    ENHANCEMENT MODE
  • Power Dissipation
    40W
  • Case Connection
    ISOLATED
  • Turn On Delay Time
    30 ns
  • FET Type
    N-Channel
  • Transistor Application
    SWITCHING
  • Rds On (Max) @ Id, Vgs
    900m Ω @ 4.5A, 10V
  • Vgs(th) (Max) @ Id
    4.5V @ 100μA
  • Input Capacitance (Ciss) (Max) @ Vds
    2180pF @ 25V
  • Current - Continuous Drain (Id) @ 25°C
    9A Tc
  • Gate Charge (Qg) (Max) @ Vgs
    72nC @ 10V
  • Rise Time
    20ns
  • Drive Voltage (Max Rds On,Min Rds On)
    10V
  • Vgs (Max)
    ±30V
  • Fall Time (Typ)
    17 ns
  • Turn-Off Delay Time
    65 ns
  • Continuous Drain Current (ID)
    9A
  • Threshold Voltage
    3.75V
  • JEDEC-95 Code
    TO-220AB
  • Gate to Source Voltage (Vgs)
    30V
  • Drain Current-Max (Abs) (ID)
    9A
  • Drain to Source Breakdown Voltage
    800V
  • Avalanche Energy Rating (Eas)
    290 mJ
  • Height
    9.3mm
  • Length
    10.4mm
  • Width
    4.6mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STP10NK80ZFP Overview
In this case, the MOSFET is susceptible to avalanche breakdown, applied energy is termed avalanche energy, and the avalanche energy rating (Eas) for the MOSFET is 290 mJ.As an op amp's input capacitance parameter, CI, is defined as the capacitance between the input terminals when one input is grounded, this device's maximum input capacitance is 2180pF @ 25V.This device conducts a continuous drain current (ID) of 9A, which is the maximum continuous current transistor can conduct.Using VGS=800V and a specified value of ID, the drain-source breakdown voltage is VDS at which a specified value of ID flows. This device has a drain-source breakdown voltage of 800V (that is, no charge flow from drain to source).The drain current is the maximum continuous current this device can conduct, which is 9A.When the device is turned off, a turn-off delay time of 65 ns occurs as the input capacitance charges before drain current conduction commences.Before drain current conduction can begin, the device's turning-on delay time takes time to charge its input capacitance. This delay time is 30 ns.Voltage at the gate-source terminal of a FET transistor, called the gate-source voltage, or VGS, can be 30V.Activation of any electrical operation happens at threshold voltage, and this transistor has 3.75V threshold voltage.In order to reduce power consumption, this device uses a drive voltage of 10V volts (10V).

STP10NK80ZFP Features
the avalanche energy rating (Eas) is 290 mJ
a continuous drain current (ID) of 9A
a drain-to-source breakdown voltage of 800V voltage
the turn-off delay time is 65 ns
a threshold voltage of 3.75V


STP10NK80ZFP Applications
There are a lot of STMicroelectronics
STP10NK80ZFP applications of single MOSFETs transistors.


Motor drives and Uninterruptible Power Supplies
Micro Solar Inverter
DC/DC converters
Power Tools
Motor Drives and Uninterruptible Power Supples
Synchronous Rectification
Battery Protection Circuit
Telecom 1 Sever Power Supplies
Industrial Power Supplies
PFC stages, hard switching PWM stages and resonant switching
STP10NK80ZFP More Descriptions
N-Channel 800V - 0.8 Ohm - 9A - TO-220FP Zener-Protected SuperMESH(TM) POWER MOSFET
Trans MOSFET N-CH 800V 9A 3-Pin(3 Tab) TO-220FP Tube / MOSFET N-CH 800V 9A TO-220FP
Power Field-Effect Transistor, 9A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB
MOSFET, N, TO-220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):900mohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:3.75V; Power Dissipation Pd:40W; Transistor Case Style:TO-220FP; No. of Pins:3; SVHC:No SVHC (20-Jun-2011); Cont Current Id @ 100°C:6A; Current Id Max:9A; On State resistance @ Vgs = 10V:900mohm; Package / Case:TO-220FP; Power Dissipation Pd:40W; Power Dissipation Pd:40W; Pulse Current Idm:36A; Termination Type:Through Hole; Voltage Vds Typ:800V; Voltage Vgs Max:3.75V; Voltage Vgs Rds on Measurement:10V
Product Comparison
The three parts on the right have similar specifications to STP10NK80ZFP.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Resistance
    Terminal Finish
    Subcategory
    Technology
    Base Part Number
    Pin Count
    Number of Elements
    Power Dissipation-Max
    Element Configuration
    Operating Mode
    Power Dissipation
    Case Connection
    Turn On Delay Time
    FET Type
    Transistor Application
    Rds On (Max) @ Id, Vgs
    Vgs(th) (Max) @ Id
    Input Capacitance (Ciss) (Max) @ Vds
    Current - Continuous Drain (Id) @ 25°C
    Gate Charge (Qg) (Max) @ Vgs
    Rise Time
    Drive Voltage (Max Rds On,Min Rds On)
    Vgs (Max)
    Fall Time (Typ)
    Turn-Off Delay Time
    Continuous Drain Current (ID)
    Threshold Voltage
    JEDEC-95 Code
    Gate to Source Voltage (Vgs)
    Drain Current-Max (Abs) (ID)
    Drain to Source Breakdown Voltage
    Avalanche Energy Rating (Eas)
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Rated DC
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Current Rating
    Time@Peak Reflow Temperature-Max (s)
    Qualification Status
    Drain-source On Resistance-Max
    Pulsed Drain Current-Max (IDM)
    Max Operating Temperature
    Min Operating Temperature
    Additional Feature
    Configuration
    Drain to Source Voltage (Vdss)
    View Compare
  • STP10NK80ZFP
    STP10NK80ZFP
    ACTIVE (Last Updated: 8 months ago)
    12 Weeks
    Through Hole
    Through Hole
    TO-220-3 Full Pack
    3
    4.535924g
    SILICON
    -55°C~150°C TJ
    Tube
    SuperMESH™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    900mOhm
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP10
    3
    1
    40W Tc
    Single
    ENHANCEMENT MODE
    40W
    ISOLATED
    30 ns
    N-Channel
    SWITCHING
    900m Ω @ 4.5A, 10V
    4.5V @ 100μA
    2180pF @ 25V
    9A Tc
    72nC @ 10V
    20ns
    10V
    ±30V
    17 ns
    65 ns
    9A
    3.75V
    TO-220AB
    30V
    9A
    800V
    290 mJ
    9.3mm
    10.4mm
    4.6mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STP16NS25
    -
    -
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    SILICON
    -65°C~150°C TJ
    Tube
    MESH OVERLAY™
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    -
    Matte Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP16N
    3
    1
    140W Tc
    Single
    ENHANCEMENT MODE
    140W
    -
    -
    N-Channel
    SWITCHING
    280m Ω @ 8A, 10V
    4V @ 250μA
    1270pF @ 25V
    16A Tc
    83nC @ 10V
    26ns
    10V
    ±20V
    32 ns
    -
    16A
    -
    TO-220AB
    20V
    -
    250V
    600 mJ
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    250V
    NOT SPECIFIED
    not_compliant
    16A
    NOT SPECIFIED
    Not Qualified
    0.28Ohm
    64A
    -
    -
    -
    -
    -
  • STP11NM60FD
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    -
    -
    -
    Tube
    FDmesh™
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    450mOhm
    Tin (Sn)
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP11N
    3
    1
    160W Tc
    Single
    ENHANCEMENT MODE
    160W
    -
    20 ns
    N-Channel
    SWITCHING
    450m Ω @ 5.5A, 10V
    5V @ 250μA
    900pF @ 25V
    11A Tc
    40nC @ 10V
    16ns
    10V
    ±30V
    15 ns
    -
    11A
    -
    TO-220AB
    30V
    -
    600V
    -
    15.75mm
    10.4mm
    4.6mm
    -
    No
    ROHS3 Compliant
    Lead Free
    600V
    -
    -
    11A
    -
    -
    -
    44A
    150°C
    -65°C
    AVALANCHE RATED
    -
    -
  • STP16N60M2
    ACTIVE (Last Updated: 8 months ago)
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    -
    -
    -
    150°C TJ
    Tube
    MDmesh™ M2
    -
    Active
    1 (Unlimited)
    -
    EAR99
    -
    -
    FET General Purpose Power
    MOSFET (Metal Oxide)
    STP16N
    -
    -
    110W Tc
    -
    ENHANCEMENT MODE
    -
    -
    -
    N-Channel
    -
    320m Ω @ 6A, 10V
    4V @ 250μA
    700pF @ 100V
    12A Tc
    19nC @ 10V
    -
    10V
    ±25V
    -
    -
    12A
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    Single
    600V
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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