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STGW40V60DF

STMicroelectronics STGW40V60DF

Part Number:
STGW40V60DF
Manufacturer:
STMicroelectronics
Ventron No:
2854618-STGW40V60DF
Description:
IGBT 600V 80A 283W TO247
ECAD Model:
Datasheet:
STGW40V60DF

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Specifications
STMicroelectronics STGW40V60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW40V60DF.
  • Factory Lead Time
    20 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    283W
  • Base Part Number
    STGW40
  • Element Configuration
    Single
  • Power Dissipation
    283W
  • Input Type
    Standard
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    80A
  • Reverse Recovery Time
    41ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.35V
  • Test Condition
    400V, 40A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    226nC
  • Current - Collector Pulsed (Icm)
    160A
  • Td (on/off) @ 25°C
    52ns/208ns
  • Switching Energy
    456μJ (on), 411μJ (off)
  • Height
    20.15mm
  • Length
    15.75mm
  • Width
    5.15mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGW40V60DF Description These devices are IGBTs developed using an advanced proprietary trench gate field stop structure.  These devices are part of the V series IGBTs, which represent an optimum compromise between conduction and switching losses to maximize the efficiency of very high-frequency converters. Furthermore, the positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGW40V60DF Features Maximum junction temperature: TJ = 175 °C Tail-less switching off VCE(sat) = 1.8 V (Typ.) @ IC = 40 A Tight parameters distribution Safe paralleling Low thermal resistance Very fast soft recovery antiparallel diode

STGW40V60DF Applications Welding Power factor correction UPS Solar inverters Chargers


STGW40V60DF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3 Tab) TO-247 Tube
Igbt, Single, 600V, 80A, To-247; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.8V; Power Dissipation:283W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:175°C Rohs Compliant: Yes |Stmicroelectronics STGW40V60DF
Product Comparison
The three parts on the right have similar specifications to STGW40V60DF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Height
    Length
    Width
    Radiation Hardening
    RoHS Status
    Lead Free
    Lifecycle Status
    Weight
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Contact Plating
    JESD-30 Code
    Power - Max
    JEDEC-95 Code
    View Compare
  • STGW40V60DF
    STGW40V60DF
    STMicroelectronics
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    283W
    STGW40
    Single
    283W
    Standard
    600V
    80A
    41ns
    600V
    2.35V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    226nC
    160A
    52ns/208ns
    456μJ (on), 411μJ (off)
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW30H60DF
    STGW30H60DF
    STMicroelectronics
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -40°C~175°C TJ
    Tube
    Obsolete
    Not Applicable
    EAR99
    260W
    STGW30
    Single
    260W
    Standard
    600V
    60A
    110 ns
    600V
    2.4V
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    Trench Field Stop
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    -
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGW40V60DF vs STGW30H60DF
  • STGW20NC60VD
    STGW20NC60VD
    STMicroelectronics
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    200W
    STGW20
    Single
    200W
    Standard
    600V
    60A
    44ns
    600V
    2.5V
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    -
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20.15mm
    15.75mm
    5.15mm
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    38.000013g
    SILICON
    PowerMESH™
    e3
    3
    Tin (Sn)
    ULTRA FAST
    Insulated Gate BIP Transistors
    600V
    30A
    3
    1
    31 ns
    POWER CONTROL
    11.5ns
    N-CHANNEL
    100 ns
    42.5 ns
    30A
    280 ns
    20V
    5.75V
    No SVHC
    -
    -
    -
    -
    STGW40V60DF vs STGW20NC60VD
  • STGW19NC60HD
    STGW19NC60HD
    STMicroelectronics
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    140W
    STGW19
    Single
    -
    Standard
    600V
    42A
    31 ns
    600V
    -
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    -
    -
    -
    No
    ROHS3 Compliant
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    -
    SILICON
    PowerMESH™
    -
    3
    -
    -
    Insulated Gate BIP Transistors
    -
    -
    3
    1
    25 ns
    POWER CONTROL
    -
    N-CHANNEL
    144 ns
    32 ns
    -
    272 ns
    20V
    5.75V
    -
    Tin
    R-PSFM-T3
    140W
    TO-247AC
    STGW40V60DF vs STGW19NC60HD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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