STMicroelectronics STGW40V60DLF
- Part Number:
- STGW40V60DLF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854655-STGW40V60DLF
- Description:
- IGBT 600V 80A 283W TO247
- ECAD Model:
-
- Datasheet:
- STGW40V60DLF
STMicroelectronics STGW40V60DLF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW40V60DLF.
- Factory Lead Time20 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation283W
- Base Part NumberSTGW40
- Element ConfigurationSingle
- Power Dissipation283W
- Input TypeStandard
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current80A
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.35V
- Test Condition400V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.3V @ 15V, 40A
- IGBT TypeTrench Field Stop
- Gate Charge226nC
- Current - Collector Pulsed (Icm)160A
- Td (on/off) @ 25°C-/208ns
- Switching Energy411μJ (off)
- Gate-Emitter Voltage-Max20V
- Height20.15mm
- Length15.75mm
- Width5.15mm
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGW40V60DLF Description
An IGBT called the STGW40V60DLF was created employing a cutting-edge, proprietary trench gate field stop construction. The component is a part of the V series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high-frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and very narrow parameter distribution.
STGW40V60DLF Features
Safe paralleling
Tail-less switching off
Low thermal resistance
Tight parameters distribution
VCE(sat)= 1.8 V (typ.) @ IC= 40 A
Designed for soft commutation only
Low VFsoft recovery co-packaged diode
Maximum junction temperature: TJ= 175 °C
STGW40V60DLF Applications
Industrial
Personal electronics
Communications equipment
An IGBT called the STGW40V60DLF was created employing a cutting-edge, proprietary trench gate field stop construction. The component is a part of the V series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of very high-frequency converters. Additionally, safer paralleling operation is produced by a positive VCE(sat)temperature coefficient and very narrow parameter distribution.
STGW40V60DLF Features
Safe paralleling
Tail-less switching off
Low thermal resistance
Tight parameters distribution
VCE(sat)= 1.8 V (typ.) @ IC= 40 A
Designed for soft commutation only
Low VFsoft recovery co-packaged diode
Maximum junction temperature: TJ= 175 °C
STGW40V60DLF Applications
Industrial
Personal electronics
Communications equipment
STGW40V60DLF More Descriptions
Trench gate field-stop IGBT, V series 600 V, 40 A very high speed
IGBT, 600V, 80A, 175DEG C, 283W; Available until stocks are exhausted Alternative available
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3 Tab) TO-247 Tube
Igbt, 600V, 80A, 175Deg C, 283W Rohs Compliant: Yes |Stmicroelectronics STGW40V60DLF
IGBT, 600V, 80A, 175DEG C, 283W; Available until stocks are exhausted Alternative available
Trans IGBT Chip N-CH 600V 80A 283000mW 3-Pin(3 Tab) TO-247 Tube
Igbt, 600V, 80A, 175Deg C, 283W Rohs Compliant: Yes |Stmicroelectronics STGW40V60DLF
The three parts on the right have similar specifications to STGW40V60DLF.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeSubcategoryMax Power DissipationBase Part NumberElement ConfigurationPower DissipationInput TypePolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxHeightLengthWidthRadiation HardeningRoHS StatusTransistor Element MaterialNumber of TerminationsTerminal PositionPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)JESD-30 CodeNumber of ElementsConfigurationCase ConnectionPower - MaxTransistor ApplicationReverse Recovery TimeVoltage - Collector Emitter Breakdown (Max)Turn On TimeTurn Off Time-Nom (toff)REACH SVHCLifecycle StatusSeriesCurrent - Collector (Ic) (Max)Lead FreeView Compare
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STGW40V60DLF20 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTubeActive1 (Unlimited)EAR99Insulated Gate BIP Transistors283WSTGW40Single283WStandardN-CHANNEL600V80A600V2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A-/208ns411μJ (off)20V20.15mm15.75mm5.15mmNoROHS3 Compliant--------------------- -
41 WeeksSurface MountThrough HoleTO-247-3--55°C~175°C TJTubeActiveNot ApplicableEAR99-468WSTGW40--StandardN-CHANNEL2.15V80A1.2kV-600V, 40A, 15 Ω, 15V2.15V @ 15V, 40ATrench Field Stop129nC160A35ns/148ns1.43mJ (on), 3.83mJ (off)-----ROHS3 CompliantSILICON3SINGLENOT SPECIFIEDNOT SPECIFIEDR-PSFM-T31SINGLE WITH BUILT-IN DIODECOLLECTOR468WPOWER CONTROL355 ns1200V50 ns158.46 nsNo SVHC----
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30 Weeks-Through HoleTO-247-3--55°C~175°C TJTubeActive1 (Unlimited)---STGW10--Standard-----400V, 10A, 22 Ω, 15V2V @ 15V, 10ATrench Field Stop28nC40A19ns/91ns120μJ (on), 270μJ (off)-----ROHS3 Compliant---------115W-96ns650V---ACTIVE (Last Updated: 8 months ago)M20A-
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20 WeeksThrough HoleThrough HoleTO-247-33-55°C~175°C TJTubeActive1 (Unlimited)EAR99-283WSTGW40Single283WStandard-600V80A600V2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A52ns/208ns456μJ (on), 411μJ (off)-20.15mm15.75mm5.15mmNoROHS3 Compliant-----------41ns-------Lead Free
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