IXYS IXYH40N120C3D1
- Part Number:
- IXYH40N120C3D1
- Manufacturer:
- IXYS
- Ventron No:
- 3813899-IXYH40N120C3D1
- Description:
- IGBT 1200V 64A 480W TO247
- Datasheet:
- IXYH40N120C3D1
IXYS IXYH40N120C3D1 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXYH40N120C3D1.
- Factory Lead Time28 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesGenX3™, XPT™
- Published2013
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- Additional FeatureAVALANCHE RATED
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation480W
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Power Dissipation480W
- Case ConnectionCOLLECTOR
- Input TypeStandard
- Turn On Delay Time24 ns
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time125 ns
- Collector Emitter Voltage (VCEO)1.2kV
- Max Collector Current64A
- Reverse Recovery Time195ns
- JEDEC-95 CodeTO-247AD
- Collector Emitter Breakdown Voltage1.2kV
- Voltage - Collector Emitter Breakdown (Max)1200V
- Collector Emitter Saturation Voltage4.8V
- Turn On Time99 ns
- Test Condition600V, 40A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic4V @ 15V, 40A
- Turn Off Time-Nom (toff)178 ns
- Gate Charge85nC
- Current - Collector Pulsed (Icm)105A
- Td (on/off) @ 25°C24ns/125ns
- Switching Energy3.9mJ (on), 660μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5V
- Height21.46mm
- Length16.26mm
- Width5.3mm
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
IXYH40N120C3D1 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXYH40N120C3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXYH40N120C3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXYH40N120C3D1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXYH40N120C3D1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
The three parts on the right have similar specifications to IXYH40N120C3D1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingSeriesPublishedPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsAdditional FeatureSubcategoryMax Power DissipationPin CountNumber of ElementsElement ConfigurationPower DissipationCase ConnectionInput TypeTurn On Delay TimeTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageVoltage - Collector Emitter Breakdown (Max)Collector Emitter Saturation VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxHeightLengthWidthRoHS StatusLead FreePower - MaxCurrent - Collector (Ic) (Max)IGBT TypeView Compare
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IXYH40N120C3D128 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)3AVALANCHE RATEDInsulated Gate BIP Transistors480W31Single480WCOLLECTORStandard24 nsPOWER CONTROLN-CHANNEL125 ns1.2kV64A195nsTO-247AD1.2kV1200V4.8V99 ns600V, 40A, 10 Ω, 15V4V @ 15V, 40A178 ns85nC105A24ns/125ns3.9mJ (on), 660μJ (off)20V5V21.46mm16.26mm5.3mmROHS3 CompliantLead Free----
-
28 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeGenX3™, XPT™2012Active1 (Unlimited)3-Insulated Gate BIP Transistors416W-1Single416WCOLLECTORStandard23 nsPOWER CONTROLN-CHANNEL126 ns1.2kV66A195nsTO-247AD1.2kV1200V3.7V71 ns600V, 30A, 10 Ω, 15V3.3V @ 15V, 30A296 ns69nC133A19ns/130ns2.6mJ (on), 1.1mJ (off)20V5V21.46mm16.26mm5.3mmROHS3 CompliantLead Free---
-
28 WeeksThrough HoleThrough HoleTO-247-33SILICON-55°C~150°C TJTubeGenX3™, XPT™2013Active1 (Unlimited)3-Insulated Gate BIP Transistors500W-1Single500WCOLLECTORStandard-POWER CONTROLN-CHANNEL-900V90A100nsTO-247AD900V-2.2V81 ns450V, 40A, 5 Ω, 15V2.5V @ 15V, 40A237 ns74nC180A27ns/78ns1.9mJ (on), 1mJ (off)20V5.5V---ROHS3 CompliantLead Free---
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24 Weeks-Through HoleTO-247-3 Variant---55°C~150°C TJTubeXPT™-Active1 (Unlimited)---------Standard---------4500V--960V, 30A, 10 Ω, 15V3.9V @ 15V, 30A-88nC200A-------ROHS3 Compliant-430W60APT
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