FGB5N60UNDF

Fairchild/ON Semiconductor FGB5N60UNDF

Part Number:
FGB5N60UNDF
Manufacturer:
Fairchild/ON Semiconductor
Ventron No:
3813847-FGB5N60UNDF
Description:
IGBT 600V 10A 73.5W D2PAK
ECAD Model:
Datasheet:
FGB5N60UNDF

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Specifications
Fairchild/ON Semiconductor FGB5N60UNDF technical specifications, attributes, parameters and parts with similar specifications to Fairchild/ON Semiconductor FGB5N60UNDF.
  • Lifecycle Status
    ACTIVE (Last Updated: 4 days ago)
  • Factory Lead Time
    5 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
  • Number of Pins
    3
  • Weight
    1.31247g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2013
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • HTS Code
    8541.29.00.95
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    73.5W
  • Terminal Form
    GULL WING
  • JESD-30 Code
    R-PSSO-G2
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    73.5W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    10A
  • Reverse Recovery Time
    35 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.4V
  • Turn On Time
    7.5 ns
  • Test Condition
    400V, 5A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 5A
  • Turn Off Time-Nom (toff)
    151.6 ns
  • IGBT Type
    NPT
  • Gate Charge
    12.1nC
  • Current - Collector Pulsed (Icm)
    15A
  • Td (on/off) @ 25°C
    5.4ns/25.4ns
  • Switching Energy
    80μJ (on), 70μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    8.5V
  • Fall Time-Max (tf)
    202ns
  • Height
    4.83mm
  • Length
    10.67mm
  • Width
    9.65mm
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
FGB5N60UNDF Description
FGB5N60UNDF is a 600V Short Circuit Rated IGBT. Using advanced NPT IGBT technology, Fairchild's the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machines, CNC, motor control, and home appliances. The Operating and Storage Temperature Range is between -55 and 150℃. And the Transistor FGB5N60UNDF is in the TO-263AB/D2-PAK package with 73.5W power dissipation.

FGB5N60UNDF Features
Short Circuit Rated 10 us High Current Capability High Input Impedance Fast Switching RoHS Compliant

FGB5N60UNDF Applications
Sewing Machine CNC Home Appliances Motor Control
FGB5N60UNDF More Descriptions
Trans IGBT Chip N-CH 600V 10A 3-Pin(2 Tab) D2PAK Rail - Tape and Reel
IGBT, SINGLE, 600V, 10A, TO-263AB; DC Collector Current: 10A; Collector Emitter Saturation Voltage Vce(on): 1.9V; Power Dissipation Pd: 73.5W; Collector Emitter Voltage V(br)ceo: 600V; T; Available until stocks are exhausted
Using advanced NPT IGBT technology, Fairchild’s the NPT IGBTs offer the optimum performance for low-power inverter-driven applications where low-losses and short-circuit ruggedness features are essential, such as sewing machine, CNC, motor control and home appliances.
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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