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STGW40M120DF3

STMicroelectronics STGW40M120DF3

Part Number:
STGW40M120DF3
Manufacturer:
STMicroelectronics
Ventron No:
2854585-STGW40M120DF3
Description:
IGBT 1200V 80A 468W TO-247
ECAD Model:
Datasheet:
STGW40M120DF3

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Specifications
STMicroelectronics STGW40M120DF3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW40M120DF3.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Number of Pins
    3
  • Weight
    38.000013g
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    468W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGW40
  • Element Configuration
    Single
  • Input Type
    Standard
  • Power - Max
    468W
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.2kV
  • Max Collector Current
    80A
  • Reverse Recovery Time
    355 ns
  • Collector Emitter Breakdown Voltage
    1.2kV
  • Voltage - Collector Emitter Breakdown (Max)
    1200V
  • Collector Emitter Saturation Voltage
    1.85V
  • Test Condition
    600V, 40A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.3V @ 15V, 40A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    125nC
  • Current - Collector Pulsed (Icm)
    160A
  • Td (on/off) @ 25°C
    35ns/140ns
  • Switching Energy
    1.5mJ (on), 2.25mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    7V
  • REACH SVHC
    No SVHC
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGW40M120DF3 Description

STGW40M120DF3 is a Trench gate field-stop IGBT, M series 1200 V, 40 A low loss, built with a patented trench gate field-stop structure. The device is part of the M family of IGBTs, which provide the best compromise in performance for inverter systems that require low-loss and short-circuit capability. A positive VCE(sat) temperature coefficient and a narrow parameter distribution also make paralleling safer. It can be utilized in UPS, solar, welding, and industrial drives, according to the STGW40M120DF3 datasheet.


STGW40M120DF3 Features

Safer paralleling
Low thermal resistance
Tight parameters distribution
10 μs of short-circuit withstand time
VCE(sat) = 1.85 V (typ.) @ IC = 40 A
Soft and fast recovery antiparallel diode


STGW40M120DF3 Applications


UPS
Solar
Welding
Industrial drives
STGW40M120DF3 More Descriptions
Trench gate field-stop IGBT, M series 1200 V, 40 A low loss
Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3 Tab) TO-247 Tube
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.85V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of
Igbt, Single, 1.2Kv, 80A, To-247-3; Continuous Collector Current:80A; Collector Emitter Saturation Voltage:1.85V; Power Dissipation:468W; Collector Emitter Voltage Max:1.2Kv; No. Of Pins:3Pins; Operating Temperature Max:175°C; Msl:- Rohs Compliant: Yes |Stmicroelectronics STGW40M120DF3
Product Comparison
The three parts on the right have similar specifications to STGW40M120DF3.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Element Configuration
    Input Type
    Power - Max
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    RoHS Status
    Lead Free
    Power Dissipation
    Height
    Length
    Width
    Radiation Hardening
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Rise Time
    Turn-Off Delay Time
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Contact Plating
    JESD-30 Code
    JEDEC-95 Code
    View Compare
  • STGW40M120DF3
    STGW40M120DF3
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    468W
    NOT SPECIFIED
    NOT SPECIFIED
    STGW40
    Single
    Standard
    468W
    N-CHANNEL
    1.2kV
    80A
    355 ns
    1.2kV
    1200V
    1.85V
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    125nC
    160A
    35ns/140ns
    1.5mJ (on), 2.25mJ (off)
    20V
    7V
    No SVHC
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40V60DLF
    STGW40V60DLF
    STMicroelectronics
    -
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    -
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    283W
    -
    -
    STGW40
    Single
    Standard
    -
    N-CHANNEL
    600V
    80A
    -
    600V
    -
    2.35V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    226nC
    160A
    -/208ns
    411μJ (off)
    20V
    -
    -
    ROHS3 Compliant
    -
    283W
    20.15mm
    15.75mm
    5.15mm
    No
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    STGW40M120DF3 vs STGW40V60DLF
  • STGW20NC60VD
    STGW20NC60VD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    3
    38.000013g
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    200W
    -
    -
    STGW20
    Single
    Standard
    -
    N-CHANNEL
    600V
    60A
    44ns
    600V
    -
    2.5V
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    -
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20V
    5.75V
    No SVHC
    ROHS3 Compliant
    Lead Free
    200W
    20.15mm
    15.75mm
    5.15mm
    No
    SILICON
    PowerMESH™
    e3
    3
    Tin (Sn)
    ULTRA FAST
    600V
    30A
    3
    1
    31 ns
    POWER CONTROL
    11.5ns
    100 ns
    42.5 ns
    30A
    280 ns
    -
    -
    -
    STGW40M120DF3 vs STGW20NC60VD
  • STGW19NC60HD
    STGW19NC60HD
    STMicroelectronics
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -
    -
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    Insulated Gate BIP Transistors
    140W
    -
    -
    STGW19
    Single
    Standard
    140W
    N-CHANNEL
    600V
    42A
    31 ns
    600V
    -
    -
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    20V
    5.75V
    -
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    No
    SILICON
    PowerMESH™
    -
    3
    -
    -
    -
    -
    3
    1
    25 ns
    POWER CONTROL
    -
    144 ns
    32 ns
    -
    272 ns
    Tin
    R-PSFM-T3
    TO-247AC
    STGW40M120DF3 vs STGW19NC60HD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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