STMicroelectronics STGB10NB37LZ

Name: STGB10NB37LZ
Brand: STMicroelectronics
SKU: 4538903-STGB10NB37LZ
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGB10NB37LZ

Manufacturer:: STMicroelectronics

Ventron No:: 4538903-STGB10NB37LZ

Description:: IGBT 440V 20A 125W D2PAK

ECAD Model:

Datasheet:: STGB10NB37LZ

Specifications

STMicroelectronics STGB10NB37LZ technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGB10NB37LZ.

Mount
Surface Mount
Mounting Type
Surface Mount
Package / Case
TO-263-3, D2Pak (2 Leads Tab), TO-263AB
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~175°C TJ
Packaging
Tube
Series
PowerMESH™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
2
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn) - annealed
Additional Feature
VOLTAGE CLAMPING
Subcategory
Insulated Gate BIP Transistors
Max Power Dissipation
125W
Terminal Form
GULL WING
Peak Reflow Temperature (Cel)
245
Time@Peak Reflow Temperature-Max (s)
30
Base Part Number
STGB10
Pin Count
3
JESD-30 Code
R-PSSO-G2
Number of Elements
1
Element Configuration
Single
Power Dissipation
125W
Case Connection
COLLECTOR
Input Type
Standard
Transistor Application
AUTOMOTIVE IGNITION
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
1.8V
Max Collector Current
20A
Collector Emitter Breakdown Voltage
440V
Collector Emitter Saturation Voltage
1.2V
Turn On Time
860 ns
Test Condition
328V, 10A, 1k Ω, 5V
Vce(on) (Max) @ Vge, Ic
1.8V @ 4.5V, 10A
Turn Off Time-Nom (toff)
17800 ns
Gate Charge
28nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
1.3μs/8μs
Switching Energy
2.4mJ (on), 5mJ (off)
Gate-Emitter Thr Voltage-Max
2.4V
Height
4.6mm
Length
10.4mm
Width
9.35mm
Radiation Hardening
No
RoHS Status
ROHS3 Compliant

Description

Description
The STGB10NB37LZ is an internally clamped 10 A - 410 V IGBT. The sophisticated PowerMESHTM technology is used in this IGBT, resulting in a superb trade-off between switching performance and low on-state behavior. The gate emitter Zener provides ESD protection, while the built-in collector-gate Zener provides very precise active clamping.

Features
High current capability
High voltage clamping feature
Low threshold voltage
Low on-voltage drop
Low gate charge

Applications
Automotive ignition
SMPS (Switched mode power supply)
UPS (Uninterruptible power supply)
AC and DC motor drives offering speed control
Chopper and inverters
Solar inverters

STGB10NB37LZ More Descriptions

Trans IGBT Chip N-CH 440V 20A Automotive 3-Pin(2 Tab) D2PAK Tube
IGBT, SMD, 400V, 20A, D2-PAK; DC Collector Current: 20A; Collector Emitter Saturation Voltage Vce(on): 1.8V; Power Dissipation Pd: 125W; Collector Emitter Voltage V(br)ceo: 410V; Transistor Case Style: TO-263; No. of Pins: 3Pi
IGBT, SMD, 400V, 20A, D2-PAK; Transistor Type:IGBT; Transistor Polarity:N Channel; Voltage, Vces:400V; Current Ic Continuous a Max:20A; Voltage, Vce Sat Max:1.8V; Power Dissipation:125W; Case Style:D2-PAK; Termination Type:SMD; ;RoHS Compliant: Yes

Product Comparison

The three parts on the right have similar specifications to STGB10NB37LZ.

Image

Part Number

Manufacturer

Mount

Mounting Type

Package / Case

Number of Pins

Transistor Element Material

Operating Temperature

Packaging

Series

JESD-609 Code

Pbfree Code

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Terminal Finish

Additional Feature

Subcategory

Max Power Dissipation

Terminal Form

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

Pin Count

JESD-30 Code

Number of Elements

Element Configuration

Power Dissipation

Case Connection

Input Type

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

Gate-Emitter Thr Voltage-Max

Height

Length

Width

Radiation Hardening

RoHS Status

Lifecycle Status

Factory Lead Time

Voltage - Rated DC

Current Rating

Rise Time

Reverse Recovery Time

Max Breakdown Voltage

Lead Free

Turn On Delay Time

Turn-Off Delay Time

Continuous Drain Current (ID)

View Compare
STGB10NB37LZ

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-65°C~175°C TJ

Tube

PowerMESH™

e3

yes

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn) - annealed

VOLTAGE CLAMPING

Insulated Gate BIP Transistors

125W

GULL WING

245

30

STGB10

3

R-PSSO-G2

1

Single

125W

COLLECTOR

Standard

AUTOMOTIVE IGNITION

N-CHANNEL

1.8V

20A

440V

1.2V

860 ns

328V, 10A, 1k Ω, 5V

1.8V @ 4.5V, 10A

17800 ns

28nC

40A

1.3μs/8μs

2.4mJ (on), 5mJ (off)

2.4V

4.6mm

10.4mm

9.35mm

No

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-
STGB14NC60KDT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~150°C TJ

Tape & Reel (TR)

PowerMESH™

-

-

Active

1 (Unlimited)

-

-

-

-

-

80W

-

-

-

STGB14

-

-

-

Single

80W

-

Standard

-

-

600V

25A

600V

2.1V

-

390V, 7A, 10 Ω, 15V

2.5V @ 15V, 7A

-

34.4nC

50A

22.5ns/116ns

82μJ (on), 155μJ (off)

-

4.6mm

10.4mm

9.35mm

No

ROHS3 Compliant

ACTIVE (Last Updated: 8 months ago)

8 Weeks

600V

25A

8.5ns

37 ns

600V

Lead Free

-

-

-

STGB10NB37LZ vs STGB14NC60KDT4
STGB20N40LZ

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

-

-55°C~175°C TJ

Cut Tape (CT)

Automotive, AEC-Q101, PowerMESH™

-

-

Active

1 (Unlimited)

-

EAR99

-

-

-

150W

-

-

-

STGB20

-

-

-

Single

150W

-

Logic

-

-

425V

25A

390V

1.5V

-

300V, 10A, 1k Ω, 5V

1.6V @ 4V, 6A

-

24nC

40A

700ns/4.3μs

-

-

4.6mm

10.4mm

9.35mm

No

ROHS3 Compliant

ACTIVE (Last Updated: 7 months ago)

8 Weeks

-

-

-

-

390V

Lead Free

700 ns

4.3 μs

-

STGB10NB37LZ vs STGB20N40LZ
STGB20NB37LZT4

STMicroelectronics

Surface Mount

Surface Mount

TO-263-3, D2Pak (2 Leads Tab), TO-263AB

3

SILICON

-55°C~175°C TJ

Tape & Reel (TR)

PowerMESH™

e3

-

Obsolete

1 (Unlimited)

2

EAR99

Matte Tin (Sn)

-

Insulated Gate BIP Transistors

200W

GULL WING

245

30

STGB20

3

R-PSSO-G2

1

Single

200W

COLLECTOR

Standard

POWER CONTROL

N-CHANNEL

375V

40A

425V

2V

2900 ns

250V, 20A, 1k Ω, 4.5V

2V @ 4.5V, 20A

15000 ns

51nC

80A

2.3μs/2μs

11.8mJ (off)

2V

-

-

-

No

ROHS3 Compliant

-

-

-

20A

-

-

425V

Lead Free

2.3 μs

2 μs

20A

STGB10NB37LZ vs STGB20NB37LZT4