Renesas Electronics America RJP60V0DPM-00#T1
- Part Number:
- RJP60V0DPM-00#T1
- Manufacturer:
- Renesas Electronics America
- Ventron No:
- 3813818-RJP60V0DPM-00#T1
- Description:
- IGBT 600V 45A 40W TO-3PFM
- Datasheet:
- RJP60V0DPM-00#T1
Renesas Electronics America RJP60V0DPM-00#T1 technical specifications, attributes, parameters and parts with similar specifications to Renesas Electronics America RJP60V0DPM-00#T1.
- Factory Lead Time16 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-3PFM, SC-93-3
- Number of Pins3
- Transistor Element MaterialSILICON
- Operating Temperature150°C TJ
- PackagingTube
- Pbfree Codeyes
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation40W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Pin Count3
- Number of Elements1
- Element ConfigurationSingle
- Case ConnectionISOLATED
- Input TypeStandard
- Power - Max40W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Collector Emitter Voltage (VCEO)2.1V
- Max Collector Current45A
- Collector Emitter Breakdown Voltage600V
- Turn On Time85 ns
- Test Condition300V, 22A, 5 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.1V @ 15V, 22A
- Turn Off Time-Nom (toff)170 ns
- IGBT TypeTrench
- Gate Charge75nC
- Td (on/off) @ 25°C45ns/100ns
- Gate-Emitter Thr Voltage-Max7.5V
- RoHS StatusROHS3 Compliant
RJP60V0DPM-00#T1 Overview
This product is manufactured by Renesas Electronics America and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RJP60V0DPM-00#T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RJP60V0DPM-00#T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
This product is manufactured by Renesas Electronics America and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet RJP60V0DPM-00#T1 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of RJP60V0DPM-00#T1. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
RJP60V0DPM-00#T1 More Descriptions
Trans IGBT Chip N-CH 600V 45A 3-Pin TO-3PFM Tube
IGBT Transistors Power Module - Lead Free
IGBT for Inverter Applications
IGBT Transistors Power Module - Lead Free
IGBT for Inverter Applications
The three parts on the right have similar specifications to RJP60V0DPM-00#T1.
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ImagePart NumberManufacturerFactory Lead TimeMountMounting TypePackage / CaseNumber of PinsTransistor Element MaterialOperating TemperaturePackagingPbfree CodePart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Pin CountNumber of ElementsElement ConfigurationCase ConnectionInput TypePower - MaxTransistor ApplicationPolarity/Channel TypeCollector Emitter Voltage (VCEO)Max Collector CurrentCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)IGBT TypeGate ChargeTd (on/off) @ 25°CGate-Emitter Thr Voltage-MaxRoHS StatusPublishedBase Part NumberLead FreeView Compare
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RJP60V0DPM-00#T116 WeeksThrough HoleThrough HoleTO-3PFM, SC-93-33SILICON150°C TJTubeyesActive1 (Unlimited)3EAR99Insulated Gate BIP Transistors40WNOT SPECIFIEDNOT SPECIFIED31SingleISOLATEDStandard40WPOWER CONTROLN-CHANNEL2.1V45A600V85 ns300V, 22A, 5 Ω, 15V2.1V @ 15V, 22A170 nsTrench75nC45ns/100ns7.5VROHS3 Compliant----
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16 WeeksThrough HoleThrough HoleTO-3P-3, SC-65-3--150°C TJTubeyesActive1 (Unlimited)---140WNOT SPECIFIEDNOT SPECIFIED4---Standard140W--2.2V45A600V-300V, 22A, 5 Ω, 15V2.2V @ 15V, 22A--45nC35ns/90ns-ROHS3 Compliant2011RJP60DLead Free
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16 WeeksSurface MountSurface MountSC-83--150°C TJTape & Reel (TR)-Obsolete1 (Unlimited)---122WNOT SPECIFIEDNOT SPECIFIED4---Standard122W--1.82V50A600V-400V, 30A, 5 Ω, 15V1.82V @ 15V, 25A-Trench-46ns/70ns-ROHS3 Compliant2011RJP60F-
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16 WeeksThrough HoleThrough HoleTO-3PFM, SC-93-33-150°C TJTubeyesActive1 (Unlimited)-EAR99Insulated Gate BIP Transistors41.2WNOT SPECIFIEDNOT SPECIFIED3-Single-Standard41.2W-N-CHANNEL1.82V60A600V-400V, 30A, 5 Ω, 15V1.82V @ 15V, 30A-Trench-45ns/70ns-ROHS3 Compliant2011RJP60F-
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