Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > IXGP20N100
IXGP20N100

IXYS IXGP20N100

Part Number:
IXGP20N100
Manufacturer:
IXYS
Ventron No:
3813770-IXGP20N100
Description:
IGBT 1000V 40A 150W TO220
ECAD Model:
Datasheet:
IXGP20N100

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
IXYS IXGP20N100 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGP20N100.
  • Factory Lead Time
    8 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Weight
    2.299997g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2003
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    150W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*20N100
  • Pin Count
    3
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Power - Max
    150W
  • Transistor Application
    MOTOR CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1kV
  • Max Collector Current
    40A
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    1kV
  • Voltage - Collector Emitter Breakdown (Max)
    1000V
  • Collector Emitter Saturation Voltage
    3V
  • Turn On Time
    60 ns
  • Test Condition
    800V, 20A, 47 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3V @ 15V, 20A
  • Turn Off Time-Nom (toff)
    1220 ns
  • IGBT Type
    PT
  • Gate Charge
    73nC
  • Current - Collector Pulsed (Icm)
    80A
  • Td (on/off) @ 25°C
    30ns/350ns
  • Switching Energy
    3.5mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    700ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGP20N100                                  DESCRIPTION  IGBTs are widely used as switching devices in the inverter circuit (for DC-to-AC conversion) for driving small to large motors. IGBTs for inverter applications are used in home appliances such as air conditioners and refrigerators, industrial motors, and automotive main motor controllers to improve their efficiency.
IXGP20N100                                  Feature                                  High Efficiency (Up to 96%) • On/Off Inhibit • Under-Voltage Lockout • Output Current Limit • Overtemperature Shutdown • Operating Temperature: -40°C to 85°C • Surface Mount Package Available
IXGP20N100                                 APPLICATIONS                                    General-Purpose, Industrial Controls, HVAC Systems • Wide-Input Voltage • Test and Measurement, (7 V to 36 V) / (15 V to 36 V) Medical Instrumentation 
IXGP20N100 More Descriptions
IGBT 1000V 40A 150W TO220
Contact for details
Product Comparison
The three parts on the right have similar specifications to IXGP20N100.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Subcategory
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    Qualification Status
    Number of Elements
    Element Configuration
    Case Connection
    Input Type
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Series
    JESD-609 Code
    ECCN Code
    Terminal Finish
    Terminal Position
    Reach Compliance Code
    Configuration
    REACH SVHC
    View Compare
  • IXGP20N100
    IXGP20N100
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2003
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    150W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*20N100
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    150W
    MOTOR CONTROL
    N-CHANNEL
    1kV
    40A
    TO-220AB
    1kV
    1000V
    3V
    60 ns
    800V, 20A, 47 Ω, 15V
    3V @ 15V, 20A
    1220 ns
    PT
    73nC
    80A
    30ns/350ns
    3.5mJ (off)
    20V
    5V
    700ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGP12N120A2
    IXGP12N120A2
    IXYS
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    yes
    Active
    1 (Unlimited)
    3
    -
    75W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*12N120
    3
    Not Qualified
    1
    Single
    COLLECTOR
    Standard
    75W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    24A
    TO-220AB
    1.2kV
    1200V
    -
    45 ns
    960V, 12A, 100 Ω, 15V
    3V @ 15V, 12A
    1750 ns
    PT
    24nC
    48A
    15ns/680ns
    5.4mJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    IXGP20N100 vs IXGP12N120A2
  • IXGP30N60C3C1
    IXGP30N60C3C1
    IXYS
    26 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2009
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    220W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*30N60
    3
    Not Qualified
    1
    -
    COLLECTOR
    Standard
    220W
    POWER CONTROL
    N-CHANNEL
    3V
    60A
    TO-220AB
    600V
    -
    3V
    37 ns
    300V, 20A, 5 Ω, 15V
    3V @ 15V, 20A
    160 ns
    PT
    38nC
    150A
    17ns/42ns
    120μJ (on), 90μJ (off)
    20V
    5.5V
    -
    ROHS3 Compliant
    GenX3™
    e3
    EAR99
    PURE TIN
    SINGLE
    unknown
    SINGLE WITH BUILT-IN DIODE
    No SVHC
    IXGP20N100 vs IXGP30N60C3C1
  • IXGP15N120B
    IXGP15N120B
    IXYS
    8 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    2.299997g
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    yes
    Active
    1 (Unlimited)
    3
    Insulated Gate BIP Transistors
    150W
    NOT SPECIFIED
    NOT SPECIFIED
    IXG*15N120
    3
    Not Qualified
    1
    Single
    -
    Standard
    150W
    POWER CONTROL
    N-CHANNEL
    1.2kV
    30A
    TO-220AB
    1.2kV
    1200V
    3.2V
    43 ns
    960V, 15A, 10 Ω, 15V
    3.2V @ 15V, 15A
    660 ns
    PT
    69nC
    60A
    25ns/180ns
    1.75mJ (off)
    20V
    5V
    -
    ROHS3 Compliant
    HiPerFAST™
    -
    -
    -
    -
    -
    -
    -
    IXGP20N100 vs IXGP15N120B
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for IXGP20N100
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.