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IXGT24N170

IXYS IXGT24N170

Part Number:
IXGT24N170
Manufacturer:
IXYS
Ventron No:
3813775-IXGT24N170
Description:
IGBT 1700V 50A 250W TO268
ECAD Model:
Datasheet:
IXGT24N170

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Specifications
IXYS IXGT24N170 technical specifications, attributes, parameters and parts with similar specifications to IXYS IXGT24N170.
  • Factory Lead Time
    24 Weeks
  • Mount
    Surface Mount
  • Mounting Type
    Surface Mount
  • Package / Case
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
  • Weight
    4.500005g
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2008
  • JESD-609 Code
    e3
  • Pbfree Code
    yes
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    2
  • Terminal Finish
    Matte Tin (Sn)
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    250W
  • Terminal Form
    GULL WING
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Reach Compliance Code
    not_compliant
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    IXG*24N170
  • Pin Count
    4
  • JESD-30 Code
    R-PSSO-G2
  • Qualification Status
    Not Qualified
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    250W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.7kV
  • Max Collector Current
    50A
  • Collector Emitter Breakdown Voltage
    1.7kV
  • Voltage - Collector Emitter Breakdown (Max)
    1700V
  • Collector Emitter Saturation Voltage
    2.5V
  • Turn On Time
    105 ns
  • Test Condition
    1360V, 50A, 5 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    3.3V @ 15V, 24A
  • Turn Off Time-Nom (toff)
    560 ns
  • IGBT Type
    NPT
  • Gate Charge
    106nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    42ns/200ns
  • Switching Energy
    8mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5V
  • Fall Time-Max (tf)
    500ns
  • RoHS Status
    ROHS3 Compliant
Description
IXGT24N170 Overview
This product is manufactured by IXYS and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet IXGT24N170 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of IXGT24N170. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.
IXGT24N170 More Descriptions
Trans IGBT Chip N-CH 1.7KV 50A 3-Pin(2 Tab) TO-268
IGBT 1700V 50A 250W TO268
Product Comparison
The three parts on the right have similar specifications to IXGT24N170.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Weight
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    JESD-609 Code
    Pbfree Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Terminal Finish
    Subcategory
    Max Power Dissipation
    Terminal Form
    Peak Reflow Temperature (Cel)
    Reach Compliance Code
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Pin Count
    JESD-30 Code
    Qualification Status
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Collector Emitter Breakdown Voltage
    Voltage - Collector Emitter Breakdown (Max)
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Fall Time-Max (tf)
    RoHS Status
    Power - Max
    Lead Free
    Number of Pins
    Reverse Recovery Time
    Height
    Length
    Width
    View Compare
  • IXGT24N170
    IXGT24N170
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    IXG*24N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    250W
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.7kV
    50A
    1.7kV
    1700V
    2.5V
    105 ns
    1360V, 50A, 5 Ω, 15V
    3.3V @ 15V, 24A
    560 ns
    NPT
    106nC
    150A
    42ns/200ns
    8mJ (off)
    20V
    5V
    500ns
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
  • IXGT24N170A
    IXGT24N170A
    IXYS
    24 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    Insulated Gate BIP Transistors
    250W
    GULL WING
    NOT SPECIFIED
    -
    NOT SPECIFIED
    IXG*24N170
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.7kV
    24A
    1.7kV
    1700V
    4.5V
    98 ns
    850V, 24A, 10 Ω, 15V
    6V @ 15V, 16A
    275 ns
    NPT
    140nC
    75A
    21ns/336ns
    2.97mJ (on), 790μJ (off)
    20V
    5V
    80ns
    ROHS3 Compliant
    250W
    Lead Free
    -
    -
    -
    -
    -
    IXGT24N170 vs IXGT24N170A
  • IXGT20N120
    IXGT20N120
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2002
    e3
    yes
    Active
    1 (Unlimited)
    2
    Matte Tin (Sn)
    -
    150W
    GULL WING
    NOT SPECIFIED
    not_compliant
    NOT SPECIFIED
    IXG*20N120
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    MOTOR CONTROL
    N-CHANNEL
    1.2kV
    40A
    1.2kV
    1200V
    -
    57 ns
    800V, 20A, 47 Ω, 15V
    2.5V @ 15V, 20A
    1250 ns
    -
    63nC
    80A
    28ns/400ns
    6.5mJ (off)
    -
    -
    -
    ROHS3 Compliant
    150W
    -
    -
    -
    -
    -
    -
    IXGT24N170 vs IXGT20N120
  • IXGT40N120B2D1
    IXGT40N120B2D1
    IXYS
    8 Weeks
    Surface Mount
    Surface Mount
    TO-268-3, D3Pak (2 Leads Tab), TO-268AA
    4.500005g
    SILICON
    -55°C~150°C TJ
    Tube
    2008
    e3
    yes
    Active
    1 (Unlimited)
    2
    PURE TIN
    Insulated Gate BIP Transistors
    380W
    GULL WING
    NOT SPECIFIED
    unknown
    NOT SPECIFIED
    IXG*40N120
    4
    R-PSSO-G2
    Not Qualified
    1
    Single
    -
    COLLECTOR
    Standard
    POWER CONTROL
    N-CHANNEL
    1.2kV
    75A
    1.2kV
    1200V
    -
    79 ns
    960V, 40A, 2 Ω, 15V
    3.5V @ 15V, 40A
    770 ns
    PT
    138nC
    200A
    21ns/290ns
    4.5mJ (on), 3mJ (off)
    20V
    5V
    270ns
    ROHS3 Compliant
    380W
    -
    3
    100 ns
    5.1mm
    16.05mm
    14mm
    IXGT24N170 vs IXGT40N120B2D1
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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