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IRG4BC30FD1PBF

Infineon Technologies IRG4BC30FD1PBF

Part Number:
IRG4BC30FD1PBF
Manufacturer:
Infineon Technologies
Ventron No:
3813768-IRG4BC30FD1PBF
Description:
IGBT 600V 31A 100W TO220AB
ECAD Model:
Datasheet:
IRG4BC30FD1PBF

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Specifications
Infineon Technologies IRG4BC30FD1PBF technical specifications, attributes, parameters and parts with similar specifications to Infineon Technologies IRG4BC30FD1PBF.
  • Factory Lead Time
    16 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-220-3
  • Number of Pins
    3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Published
    2000
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • Termination
    Through Hole
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    100W
  • Current Rating
    31A
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    100W
  • Case Connection
    COLLECTOR
  • Input Type
    Standard
  • Transistor Application
    POWER CONTROL
  • Rise Time
    24ns
  • Polarity/Channel Type
    N-CHANNEL
  • Collector Emitter Voltage (VCEO)
    1.8V
  • Max Collector Current
    31A
  • Reverse Recovery Time
    46 ns
  • JEDEC-95 Code
    TO-220AB
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    1.8V
  • Turn On Time
    46 ns
  • Test Condition
    480V, 17A, 23 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    1.8V @ 15V, 17A
  • Turn Off Time-Nom (toff)
    740 ns
  • Gate Charge
    57nC
  • Current - Collector Pulsed (Icm)
    124A
  • Td (on/off) @ 25°C
    22ns/250ns
  • Switching Energy
    370μJ (on), 1.42mJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    6V
  • Height
    15.24mm
  • Length
    10.54mm
  • Width
    4.69mm
  • REACH SVHC
    No SVHC
  • Radiation Hardening
    No
  • RoHS Status
    RoHS Compliant
  • Lead Free
    Lead Free
Description
IRG4BC30FD1PBF Description
IRG4BC30FD1PBF is a single IGBT from the manufacturer Infineon Technologies with the breakdown voltage of 600V. The operating temperature of the IRG4BC30FD1PBF is -55°C~150°C TJ and its maximum power dissipation is 100W. IRG4BC30FD1PBF has 3 pins and it is available in Tube packaging way. The Collector Emitter Saturation Voltage of IRG4BC30FD1PBF is 1.8V.

IRG4BC30FD1PBF Features
Switching Energy: 370μJ (on), 1.42mJ (off)
Gate-Emitter Thr Voltage-Max: 6V
Test Condition: 480V, 17A, 23 Ω, 15V
Max Collector Current: 31A
Voltage - Rated DC: 600V

IRG4BC30FD1PBF Applications
Power Management
Consumer Electronics
Portable Devices
Industrial
IRG4BC30FD1PBF More Descriptions
600V Fast 1-5 kHz Hard Switching Copack IGBT in a TO-220AB package >20kHz resonant mode
Trans IGBT Chip N-CH 600V 31A 3-Pin(3 Tab) TO-220AB Tube
IGBT, 600V, 31A, TO-220; Transistor Type:IGBT; DC Collector Current:31A; Collector Emitter Voltage Vces:1.8V; Power Dissipation Pd:100W; Collector Emitter Voltage V(br)ceo:600V; Operating Temperature Range:-55°C to 150°C; Transistor Case Style:TO-220AB; No. of Pins:3; SVHC:No SVHC (19-Dec-2011); Current Ic Continuous a Max:31A; Fall Time Max:210ns; Package / Case:TO-220AB; Power Dissipation Max:100W; Power Dissipation Pd:100W; Power Dissipation Pd:100W; Pulsed Current Icm:120A; Rise Time:24ns; Termination Type:Through Hole; Transistor Polarity:N Channel; Voltage Vces:600V
Product Comparison
The three parts on the right have similar specifications to IRG4BC30FD1PBF.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Number of Pins
    Transistor Element Material
    Operating Temperature
    Packaging
    Published
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    Termination
    ECCN Code
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Number of Elements
    Element Configuration
    Power Dissipation
    Case Connection
    Input Type
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Length
    Width
    REACH SVHC
    Radiation Hardening
    RoHS Status
    Lead Free
    Surface Mount
    JESD-609 Code
    Terminal Finish
    Terminal Position
    Terminal Form
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Qualification Status
    Configuration
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    Power Dissipation-Max (Abs)
    Fall Time-Max (tf)
    Additional Feature
    Turn On Delay Time
    Turn-Off Delay Time
    View Compare
  • IRG4BC30FD1PBF
    IRG4BC30FD1PBF
    Infineon Technologies
    16 Weeks
    Through Hole
    Through Hole
    TO-220-3
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    3
    Through Hole
    EAR99
    Insulated Gate BIP Transistors
    600V
    100W
    31A
    1
    Single
    100W
    COLLECTOR
    Standard
    POWER CONTROL
    24ns
    N-CHANNEL
    1.8V
    31A
    46 ns
    TO-220AB
    600V
    1.8V
    46 ns
    480V, 17A, 23 Ω, 15V
    1.8V @ 15V, 17A
    740 ns
    57nC
    124A
    22ns/250ns
    370μJ (on), 1.42mJ (off)
    20V
    6V
    15.24mm
    10.54mm
    4.69mm
    No SVHC
    No
    RoHS Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • IRG4BC20FD-STRR
    IRG4BC20FD-STRR
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tape & Reel (TR)
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    -
    -
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    37ns
    -
    -
    -
    63 ns
    480V, 9A, 50 Ω, 15V
    2V @ 15V, 9A
    610 ns
    27nC
    64A
    43ns/240ns
    250μJ (on), 640μJ (off)
    -
    -
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    MATTE TIN OVER NICKEL
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    Not Qualified
    SINGLE WITH BUILT-IN DIODE
    60W
    600V
    16A
    -
    -
    -
    -
    -
    IRG4BC30FD1PBF vs IRG4BC20FD-STRR
  • IRG4BC30S-S
    IRG4BC30S-S
    Infineon Technologies
    -
    -
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    -
    SILICON
    -55°C~150°C TJ
    Tube
    2000
    Obsolete
    1 (Unlimited)
    2
    -
    EAR99
    Insulated Gate BIP Transistors
    -
    -
    -
    1
    -
    -
    COLLECTOR
    Standard
    POWER CONTROL
    -
    N-CHANNEL
    -
    -
    -
    -
    -
    -
    40 ns
    480V, 18A, 23 Ω, 15V
    1.6V @ 15V, 18A
    1550 ns
    50nC
    68A
    22ns/540ns
    260μJ (on), 3.45mJ (off)
    20V
    6V
    -
    -
    -
    -
    -
    Non-RoHS Compliant
    -
    YES
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    -
    SINGLE
    100W
    600V
    34A
    100W
    590ns
    -
    -
    -
    IRG4BC30FD1PBF vs IRG4BC30S-S
  • IRG4BC40W-SPBF
    IRG4BC40W-SPBF
    Infineon Technologies
    8 Weeks
    Surface Mount, Through Hole
    Surface Mount
    TO-263-3, D2Pak (2 Leads Tab), TO-263AB
    3
    SILICON
    -55°C~150°C TJ
    Tube
    2004
    Last Time Buy
    1 (Unlimited)
    2
    -
    EAR99
    Insulated Gate BIP Transistors
    600V
    160W
    40A
    1
    Dual
    160W
    COLLECTOR
    Standard
    POWER CONTROL
    23ns
    N-CHANNEL
    2.5V
    40A
    -
    -
    600V
    2.05V
    48 ns
    480V, 20A, 10 Ω, 15V
    2.5V @ 15V, 20A
    294 ns
    98nC
    160A
    27ns/100ns
    110μJ (on), 230μJ (off)
    20V
    6V
    4.83mm
    10.668mm
    4.826mm
    No SVHC
    No
    ROHS3 Compliant
    Lead Free
    -
    e3
    Matte Tin (Sn) - with Nickel (Ni) barrier
    SINGLE
    GULL WING
    260
    30
    R-PSSO-G2
    -
    -
    -
    -
    -
    -
    110ns
    LOW CONDUCTION LOSS
    27 ns
    100 ns
    IRG4BC30FD1PBF vs IRG4BC40W-SPBF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
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