STMicroelectronics STGW40S120DF3

Name: STGW40S120DF3
Brand: STMicroelectronics
SKU: 2854709-STGW40S120DF3
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGW40S120DF3

Manufacturer:: STMicroelectronics

Ventron No:: 2854709-STGW40S120DF3

Description:: IGBT 1200V 40A TO247

ECAD Model:

Datasheet:: STGW40S120DF3

Specifications

STMicroelectronics STGW40S120DF3 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW40S120DF3.

Factory Lead Time
41 Weeks
Mount
Surface Mount
Mounting Type
Through Hole
Package / Case
TO-247-3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Max Power Dissipation
468W
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGW40
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
468W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Collector Emitter Voltage (VCEO)
2.15V
Max Collector Current
80A
Reverse Recovery Time
355 ns
Collector Emitter Breakdown Voltage
1.2kV
Voltage - Collector Emitter Breakdown (Max)
1200V
Turn On Time
50 ns
Test Condition
600V, 40A, 15 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.15V @ 15V, 40A
Turn Off Time-Nom (toff)
158.46 ns
IGBT Type
Trench Field Stop
Gate Charge
129nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
35ns/148ns
Switching Energy
1.43mJ (on), 3.83mJ (off)
REACH SVHC
No SVHC
RoHS Status
ROHS3 Compliant

Description

STGW40S120DF3 Description
STGW40S120DF3, part of the S series of 1200 V IGBTs, is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate field-stop structure. It is specifically designed to achieve maximal efficiency in low-frequency industrial systems. Due to its positive VCE(sat) temperature coefficient and tight parameter distribution, a safer paralleling operation can be achieved.

STGW40S120DF3 Features
Available in the TO-247 package Tight parameter distribution Safer paralleling Low thermal resistance Soft and fast recovery antiparallel diode

STGW40S120DF3 Applications
Industrial drives UPS Solar Welding

STGW40S120DF3 More Descriptions

Trans IGBT Chip N-CH 1200V 80A 468000mW 3-Pin(3 Tab) TO-247 Tube
Trench gate field-stop IGBT, S series 1200 V, 40 A low drop
IGBT, SINGLE, 1.2KV, 80A, TO-247-3; DC Collector Current: 80A; Collector Emitter Saturation Voltage Vce(on): 1.65V; Power Dissipation Pd: 468W; Collector Emitter Voltage V(br)ceo: 1.2kV; Transistor Case Style: TO-247; No. of Pins: 3Pins; Operating Temperature Max: 175°C; Product Range: -; Automotive Qualification Standard: -; MSL: -; SVHC: No SVHC (17-Dec-2015)

Product Comparison

The three parts on the right have similar specifications to STGW40S120DF3.

Image

Part Number

Manufacturer

Factory Lead Time

Mount

Mounting Type

Package / Case

Transistor Element Material

Operating Temperature

Packaging

Part Status

Moisture Sensitivity Level (MSL)

Number of Terminations

ECCN Code

Max Power Dissipation

Terminal Position

Peak Reflow Temperature (Cel)

Time@Peak Reflow Temperature-Max (s)

Base Part Number

JESD-30 Code

Number of Elements

Configuration

Case Connection

Input Type

Power - Max

Transistor Application

Polarity/Channel Type

Collector Emitter Voltage (VCEO)

Max Collector Current

Reverse Recovery Time

Collector Emitter Breakdown Voltage

Voltage - Collector Emitter Breakdown (Max)

Turn On Time

Test Condition

Vce(on) (Max) @ Vge, Ic

Turn Off Time-Nom (toff)

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

REACH SVHC

RoHS Status

Number of Pins

Subcategory

Element Configuration

Power Dissipation

Collector Emitter Saturation Voltage

Gate-Emitter Voltage-Max

Height

Length

Width

Radiation Hardening

Lifecycle Status

Weight

Gate-Emitter Thr Voltage-Max

Lead Free

Series

JESD-609 Code

Pbfree Code

Terminal Finish

Voltage - Rated DC

Current Rating

Pin Count

Turn On Delay Time

Rise Time

Drain to Source Voltage (Vdss)

Turn-Off Delay Time

Continuous Drain Current (ID)

JEDEC-95 Code

Input Capacitance

Continuous Collector Current

View Compare
STGW40S120DF3

STMicroelectronics

41 Weeks

Surface Mount

Through Hole

TO-247-3

SILICON

-55°C~175°C TJ

Tube

Active

Not Applicable

3

EAR99

468W

SINGLE

NOT SPECIFIED

NOT SPECIFIED

STGW40

R-PSFM-T3

1

SINGLE WITH BUILT-IN DIODE

COLLECTOR

Standard

468W

POWER CONTROL

N-CHANNEL

2.15V

80A

355 ns

1.2kV

1200V

50 ns

600V, 40A, 15 Ω, 15V

2.15V @ 15V, 40A

158.46 ns

Trench Field Stop

129nC

160A

35ns/148ns

1.43mJ (on), 3.83mJ (off)

No SVHC

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGW40V60DLF

STMicroelectronics

20 Weeks

Through Hole

Through Hole

TO-247-3

-

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

-

EAR99

283W

-

-

-

STGW40

-

-

-

-

Standard

-

-

N-CHANNEL

600V

80A

-

600V

-

-

400V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

-

Trench Field Stop

226nC

160A

-/208ns

411μJ (off)

-

ROHS3 Compliant

3

Insulated Gate BIP Transistors

Single

283W

2.35V

20V

20.15mm

15.75mm

5.15mm

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGW40S120DF3 vs STGW40V60DLF
STGW40M120DF3

STMicroelectronics

30 Weeks

Through Hole

Through Hole

TO-247-3

-

-55°C~175°C TJ

Tube

Active

1 (Unlimited)

-

EAR99

468W

-

NOT SPECIFIED

NOT SPECIFIED

STGW40

-

-

-

-

Standard

468W

-

N-CHANNEL

1.2kV

80A

355 ns

1.2kV

1200V

-

600V, 40A, 10 Ω, 15V

2.3V @ 15V, 40A

-

Trench Field Stop

125nC

160A

35ns/140ns

1.5mJ (on), 2.25mJ (off)

No SVHC

ROHS3 Compliant

3

Insulated Gate BIP Transistors

Single

-

1.85V

20V

-

-

-

-

ACTIVE (Last Updated: 8 months ago)

38.000013g

7V

Lead Free

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGW40S120DF3 vs STGW40M120DF3
STGW40NC60WD

STMicroelectronics

-

Through Hole

Through Hole

TO-247-3

SILICON

-55°C~150°C TJ

Tube

Obsolete

1 (Unlimited)

3

EAR99

250W

-

-

-

STGW40

-

1

-

-

Standard

-

POWER CONTROL

N-CHANNEL

600V

70A

45 ns

600V

-

46 ns

390V, 30A, 10 Ω, 15V

2.5V @ 15V, 30A

280 ns

-

126nC

230A

33ns/168ns

302μJ (on), 349μJ (off)

No SVHC

ROHS3 Compliant

3

Insulated Gate BIP Transistors

Single

250W

2.1V

20V

20.15mm

15.75mm

5.15mm

No

-

38.000013g

5.75V

Lead Free

PowerMESH™

e3

yes

Tin (Sn)

600V

40A

3

33 ns

12ns

650V

168 ns

40A

TO-247AC

2.9nF

40A

STGW40S120DF3 vs STGW40NC60WD