STMicroelectronics STGW30H60DF
- Part Number:
- STGW30H60DF
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854688-STGW30H60DF
- Description:
- IGBT 600V 60A 260W TO247
- Datasheet:
- STGW30H60DF
STMicroelectronics STGW30H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30H60DF.
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Operating Temperature-40°C~175°C TJ
- PackagingTube
- Part StatusObsolete
- Moisture Sensitivity Level (MSL)Not Applicable
- ECCN CodeEAR99
- Max Power Dissipation260W
- Base Part NumberSTGW30
- Element ConfigurationSingle
- Power Dissipation260W
- Input TypeStandard
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current60A
- Reverse Recovery Time110 ns
- Collector Emitter Breakdown Voltage600V
- Collector Emitter Saturation Voltage2.4V
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.4V @ 15V, 30A
- IGBT TypeTrench Field Stop
- Gate Charge105nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C50ns/160ns
- Switching Energy350μJ (on), 400μJ (off)
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
STGW30H60DF Description
STGW30H60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. An easier paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGW30H60DF Features
Advanced proprietary trench gate and field stop structure Low conduction and switching losses Positive VCE(sat) temperature coefficient Very tight parameter distribution Package: to-247
STGW30H60DF Applications
Inverter UPS PFC
STGW30H60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. An easier paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.
STGW30H60DF Features
Advanced proprietary trench gate and field stop structure Low conduction and switching losses Positive VCE(sat) temperature coefficient Very tight parameter distribution Package: to-247
STGW30H60DF Applications
Inverter UPS PFC
STGW30H60DF More Descriptions
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-247 Tube
600 V, 30 A high speed trench gate field-stop IGBT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
STMICROELECTRONICS STGW30H60DF
600 V, 30 A high speed trench gate field-stop IGBT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
STMICROELECTRONICS STGW30H60DF
The three parts on the right have similar specifications to STGW30H60DF.
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ImagePart NumberManufacturerMountMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationBase Part NumberElement ConfigurationPower DissipationInput TypeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageCollector Emitter Saturation VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRadiation HardeningRoHS StatusFactory Lead TimeNumber of PinsHeightLengthWidthLead FreeLifecycle StatusWeightSubcategoryPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Power - MaxPolarity/Channel TypeVoltage - Collector Emitter Breakdown (Max)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCContact PlatingTransistor Element MaterialSeriesNumber of TerminationsPin CountJESD-30 CodeNumber of ElementsTurn On Delay TimeTransistor ApplicationTurn-Off Delay TimeJEDEC-95 CodeTurn On TimeTurn Off Time-Nom (toff)View Compare
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STGW30H60DFThrough HoleThrough HoleTO-247-3-40°C~175°C TJTubeObsoleteNot ApplicableEAR99260WSTGW30Single260WStandard600V60A110 ns600V2.4V400V, 30A, 10 Ω, 15V2.4V @ 15V, 30ATrench Field Stop105nC120A50ns/160ns350μJ (on), 400μJ (off)NoROHS3 Compliant-------------------------------
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Through HoleThrough HoleTO-247-3-55°C~175°C TJTubeActive1 (Unlimited)EAR99283WSTGW40Single283WStandard600V80A41ns600V2.35V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A52ns/208ns456μJ (on), 411μJ (off)NoROHS3 Compliant20 Weeks320.15mm15.75mm5.15mmLead Free------------------------
-
Through HoleThrough HoleTO-247-3-55°C~175°C TJTubeActive1 (Unlimited)EAR99468WSTGW40Single-Standard1.2kV80A355 ns1.2kV1.85V600V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop125nC160A35ns/140ns1.5mJ (on), 2.25mJ (off)-ROHS3 Compliant30 Weeks3---Lead FreeACTIVE (Last Updated: 8 months ago)38.000013gInsulated Gate BIP TransistorsNOT SPECIFIEDNOT SPECIFIED468WN-CHANNEL1200V20V7VNo SVHC-------------
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Through HoleThrough HoleTO-247-3-55°C~150°C TJTubeActive1 (Unlimited)EAR99140WSTGW19Single-Standard600V42A31 ns600V-390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A-53nC60A25ns/97ns85μJ (on), 189μJ (off)NoROHS3 Compliant8 Weeks----Lead FreeACTIVE (Last Updated: 8 months ago)-Insulated Gate BIP Transistors--140WN-CHANNEL-20V5.75V-TinSILICONPowerMESH™33R-PSFM-T3125 nsPOWER CONTROL144 nsTO-247AC32 ns272 ns
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