STGW30H60DF

STMicroelectronics STGW30H60DF

Part Number:
STGW30H60DF
Manufacturer:
STMicroelectronics
Ventron No:
2854688-STGW30H60DF
Description:
IGBT 600V 60A 260W TO247
ECAD Model:
Datasheet:
STGW30H60DF

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Specifications
STMicroelectronics STGW30H60DF technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30H60DF.
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Operating Temperature
    -40°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Obsolete
  • Moisture Sensitivity Level (MSL)
    Not Applicable
  • ECCN Code
    EAR99
  • Max Power Dissipation
    260W
  • Base Part Number
    STGW30
  • Element Configuration
    Single
  • Power Dissipation
    260W
  • Input Type
    Standard
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    110 ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.4V
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.4V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    105nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    50ns/160ns
  • Switching Energy
    350μJ (on), 400μJ (off)
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
Description
STGW30H60DF Description
STGW30H60DF is a type of IGBT developed by STMicroelectronics based on an advanced proprietary trench gate and field stop structure. It is able to provide low conduction and switching losses, which maximize the efficiency of very high-frequency converters. An easier paralleling operation can be achieved due to its positive VCE(sat) temperature coefficient and very tight parameter distribution.

STGW30H60DF Features
Advanced proprietary trench gate and field stop structure Low conduction and switching losses Positive VCE(sat) temperature coefficient  Very tight parameter distribution Package: to-247

STGW30H60DF Applications
Inverter UPS PFC
STGW30H60DF More Descriptions
Trans IGBT Chip N-CH 600V 60A 260000mW 3-Pin(3 Tab) TO-247 Tube
600 V, 30 A high speed trench gate field-stop IGBT
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
STMICROELECTRONICS STGW30H60DF
Product Comparison
The three parts on the right have similar specifications to STGW30H60DF.
  • Image
    Part Number
    Manufacturer
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Base Part Number
    Element Configuration
    Power Dissipation
    Input Type
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Radiation Hardening
    RoHS Status
    Factory Lead Time
    Number of Pins
    Height
    Length
    Width
    Lead Free
    Lifecycle Status
    Weight
    Subcategory
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Power - Max
    Polarity/Channel Type
    Voltage - Collector Emitter Breakdown (Max)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Contact Plating
    Transistor Element Material
    Series
    Number of Terminations
    Pin Count
    JESD-30 Code
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Turn-Off Delay Time
    JEDEC-95 Code
    Turn On Time
    Turn Off Time-Nom (toff)
    View Compare
  • STGW30H60DF
    STGW30H60DF
    Through Hole
    Through Hole
    TO-247-3
    -40°C~175°C TJ
    Tube
    Obsolete
    Not Applicable
    EAR99
    260W
    STGW30
    Single
    260W
    Standard
    600V
    60A
    110 ns
    600V
    2.4V
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    Trench Field Stop
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    No
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40V60DF
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    283W
    STGW40
    Single
    283W
    Standard
    600V
    80A
    41ns
    600V
    2.35V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    226nC
    160A
    52ns/208ns
    456μJ (on), 411μJ (off)
    No
    ROHS3 Compliant
    20 Weeks
    3
    20.15mm
    15.75mm
    5.15mm
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40M120DF3
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    468W
    STGW40
    Single
    -
    Standard
    1.2kV
    80A
    355 ns
    1.2kV
    1.85V
    600V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    125nC
    160A
    35ns/140ns
    1.5mJ (on), 2.25mJ (off)
    -
    ROHS3 Compliant
    30 Weeks
    3
    -
    -
    -
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    38.000013g
    Insulated Gate BIP Transistors
    NOT SPECIFIED
    NOT SPECIFIED
    468W
    N-CHANNEL
    1200V
    20V
    7V
    No SVHC
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW19NC60HD
    Through Hole
    Through Hole
    TO-247-3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    140W
    STGW19
    Single
    -
    Standard
    600V
    42A
    31 ns
    600V
    -
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    No
    ROHS3 Compliant
    8 Weeks
    -
    -
    -
    -
    Lead Free
    ACTIVE (Last Updated: 8 months ago)
    -
    Insulated Gate BIP Transistors
    -
    -
    140W
    N-CHANNEL
    -
    20V
    5.75V
    -
    Tin
    SILICON
    PowerMESH™
    3
    3
    R-PSFM-T3
    1
    25 ns
    POWER CONTROL
    144 ns
    TO-247AC
    32 ns
    272 ns
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

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