STGW19NC60HD

STMicroelectronics STGW19NC60HD

Part Number:
STGW19NC60HD
Manufacturer:
STMicroelectronics
Ventron No:
2854578-STGW19NC60HD
Description:
IGBT 600V 42A 140W TO247
ECAD Model:
Datasheet:
STGW19NC60HD

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STGW19NC60HD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW19NC60HD.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    8 Weeks
  • Contact Plating
    Tin
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Transistor Element Material
    SILICON
  • Operating Temperature
    -55°C~150°C TJ
  • Packaging
    Tube
  • Series
    PowerMESH™
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Subcategory
    Insulated Gate BIP Transistors
  • Max Power Dissipation
    140W
  • Base Part Number
    STGW19
  • Pin Count
    3
  • JESD-30 Code
    R-PSFM-T3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Input Type
    Standard
  • Turn On Delay Time
    25 ns
  • Power - Max
    140W
  • Transistor Application
    POWER CONTROL
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    144 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    42A
  • Reverse Recovery Time
    31 ns
  • JEDEC-95 Code
    TO-247AC
  • Collector Emitter Breakdown Voltage
    600V
  • Turn On Time
    32 ns
  • Test Condition
    390V, 12A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 12A
  • Turn Off Time-Nom (toff)
    272 ns
  • Gate Charge
    53nC
  • Current - Collector Pulsed (Icm)
    60A
  • Td (on/off) @ 25°C
    25ns/97ns
  • Switching Energy
    85μJ (on), 189μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Radiation Hardening
    No
  • RoHS Status
    ROHS3 Compliant
  • Lead Free
    Lead Free
Description
STGW19NC60HD IGBT Description
The STGW19NC60HD is an ultra-fast IGBT device. It uses the sophisticated Power MESHTM technique, which results in a good balance of switching performance and low on-state behavior. The STGW19NC60HD, when combined with cutting-edge packaging and protections for high reliability and safety, assists designers in finding the perfect solutions for tailored, high-efficiency applications that will last a long time.

STGW19NC60HD IGBT Features
Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode Maximum Collector current: 19 A Maximum Collector to Emitter Voltage: 600 V Maximum junction temperature: 175 ?C

STGW19NC60HD IGBT Applications
High-Frequency Motor Drivers SMPS PFC Home Appliances Applications Voltage Converters
STGW19NC60HD More Descriptions
19 A, 600 V, very fast IGBT with Ultrafast diode
STGW Series High Frequency Motor Both Hard Through Hole IGBT - TO-247-3
IGBT, SINGLE, 600V, 42A, TO-247; DC Collector Current: 42A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3P
Igbt, Single, 600V, 42A, To-247; Continuous Collector Current:42A; Collector Emitter Saturation Voltage:2V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Stmicroelectronics STGW19NC60HD
Product Comparison
The three parts on the right have similar specifications to STGW19NC60HD.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Contact Plating
    Mount
    Mounting Type
    Package / Case
    Transistor Element Material
    Operating Temperature
    Packaging
    Series
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Subcategory
    Max Power Dissipation
    Base Part Number
    Pin Count
    JESD-30 Code
    Number of Elements
    Element Configuration
    Input Type
    Turn On Delay Time
    Power - Max
    Transistor Application
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    JEDEC-95 Code
    Collector Emitter Breakdown Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Radiation Hardening
    RoHS Status
    Lead Free
    Voltage - Collector Emitter Breakdown (Max)
    Current - Collector (Ic) (Max)
    IGBT Type
    Power Dissipation
    Collector Emitter Saturation Voltage
    Number of Pins
    Weight
    JESD-609 Code
    Terminal Finish
    Additional Feature
    Voltage - Rated DC
    Current Rating
    Rise Time
    Continuous Collector Current
    Height
    Width
    Length
    REACH SVHC
    View Compare
  • STGW19NC60HD
    STGW19NC60HD
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Tin
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    140W
    STGW19
    3
    R-PSFM-T3
    1
    Single
    Standard
    25 ns
    140W
    POWER CONTROL
    N-CHANNEL
    144 ns
    600V
    42A
    31 ns
    TO-247AC
    600V
    32 ns
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    272 ns
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW10M65DF2
    ACTIVE (Last Updated: 8 months ago)
    30 Weeks
    -
    -
    Through Hole
    TO-247-3
    -
    -55°C~175°C TJ
    Tube
    M
    Active
    1 (Unlimited)
    -
    -
    -
    -
    STGW10
    -
    -
    -
    -
    Standard
    -
    115W
    -
    -
    -
    -
    -
    96ns
    -
    -
    -
    400V, 10A, 22 Ω, 15V
    2V @ 15V, 10A
    -
    28nC
    40A
    19ns/91ns
    120μJ (on), 270μJ (off)
    -
    -
    -
    ROHS3 Compliant
    -
    650V
    20A
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW30H60DF
    -
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    -
    -40°C~175°C TJ
    Tube
    -
    Obsolete
    Not Applicable
    -
    EAR99
    -
    260W
    STGW30
    -
    -
    -
    Single
    Standard
    -
    -
    -
    -
    -
    600V
    60A
    110 ns
    -
    600V
    -
    400V, 30A, 10 Ω, 15V
    2.4V @ 15V, 30A
    -
    105nC
    120A
    50ns/160ns
    350μJ (on), 400μJ (off)
    -
    -
    No
    ROHS3 Compliant
    -
    -
    -
    Trench Field Stop
    260W
    2.4V
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW20NC60VD
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    -
    Through Hole
    Through Hole
    TO-247-3
    SILICON
    -55°C~150°C TJ
    Tube
    PowerMESH™
    Active
    1 (Unlimited)
    3
    EAR99
    Insulated Gate BIP Transistors
    200W
    STGW20
    3
    -
    1
    Single
    Standard
    31 ns
    -
    POWER CONTROL
    N-CHANNEL
    100 ns
    600V
    60A
    44ns
    -
    600V
    42.5 ns
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    280 ns
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20V
    5.75V
    No
    ROHS3 Compliant
    Lead Free
    -
    -
    -
    200W
    2.5V
    3
    38.000013g
    e3
    Tin (Sn)
    ULTRA FAST
    600V
    30A
    11.5ns
    30A
    20.15mm
    5.15mm
    15.75mm
    No SVHC
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.