STMicroelectronics STGW19NC60HD
- Part Number:
- STGW19NC60HD
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854578-STGW19NC60HD
- Description:
- IGBT 600V 42A 140W TO247
- Datasheet:
- STGW19NC60HD
STMicroelectronics STGW19NC60HD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW19NC60HD.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time8 Weeks
- Contact PlatingTin
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Transistor Element MaterialSILICON
- Operating Temperature-55°C~150°C TJ
- PackagingTube
- SeriesPowerMESH™
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- Number of Terminations3
- ECCN CodeEAR99
- SubcategoryInsulated Gate BIP Transistors
- Max Power Dissipation140W
- Base Part NumberSTGW19
- Pin Count3
- JESD-30 CodeR-PSFM-T3
- Number of Elements1
- Element ConfigurationSingle
- Input TypeStandard
- Turn On Delay Time25 ns
- Power - Max140W
- Transistor ApplicationPOWER CONTROL
- Polarity/Channel TypeN-CHANNEL
- Turn-Off Delay Time144 ns
- Collector Emitter Voltage (VCEO)600V
- Max Collector Current42A
- Reverse Recovery Time31 ns
- JEDEC-95 CodeTO-247AC
- Collector Emitter Breakdown Voltage600V
- Turn On Time32 ns
- Test Condition390V, 12A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2.5V @ 15V, 12A
- Turn Off Time-Nom (toff)272 ns
- Gate Charge53nC
- Current - Collector Pulsed (Icm)60A
- Td (on/off) @ 25°C25ns/97ns
- Switching Energy85μJ (on), 189μJ (off)
- Gate-Emitter Voltage-Max20V
- Gate-Emitter Thr Voltage-Max5.75V
- Radiation HardeningNo
- RoHS StatusROHS3 Compliant
- Lead FreeLead Free
STGW19NC60HD IGBT Description
The STGW19NC60HD is an ultra-fast IGBT device. It uses the sophisticated Power MESHTM technique, which results in a good balance of switching performance and low on-state behavior. The STGW19NC60HD, when combined with cutting-edge packaging and protections for high reliability and safety, assists designers in finding the perfect solutions for tailored, high-efficiency applications that will last a long time.
STGW19NC60HD IGBT Features
Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode Maximum Collector current: 19 A Maximum Collector to Emitter Voltage: 600 V Maximum junction temperature: 175 ?C
STGW19NC60HD IGBT Applications
High-Frequency Motor Drivers SMPS PFC Home Appliances Applications Voltage Converters
The STGW19NC60HD is an ultra-fast IGBT device. It uses the sophisticated Power MESHTM technique, which results in a good balance of switching performance and low on-state behavior. The STGW19NC60HD, when combined with cutting-edge packaging and protections for high reliability and safety, assists designers in finding the perfect solutions for tailored, high-efficiency applications that will last a long time.
STGW19NC60HD IGBT Features
Low on-voltage drop (VCE(sat)) Very soft Ultrafast recovery anti-parallel diode Maximum Collector current: 19 A Maximum Collector to Emitter Voltage: 600 V Maximum junction temperature: 175 ?C
STGW19NC60HD IGBT Applications
High-Frequency Motor Drivers SMPS PFC Home Appliances Applications Voltage Converters
STGW19NC60HD More Descriptions
19 A, 600 V, very fast IGBT with Ultrafast diode
STGW Series High Frequency Motor Both Hard Through Hole IGBT - TO-247-3
IGBT, SINGLE, 600V, 42A, TO-247; DC Collector Current: 42A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3P
Igbt, Single, 600V, 42A, To-247; Continuous Collector Current:42A; Collector Emitter Saturation Voltage:2V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Stmicroelectronics STGW19NC60HD
STGW Series High Frequency Motor Both Hard Through Hole IGBT - TO-247-3
IGBT, SINGLE, 600V, 42A, TO-247; DC Collector Current: 42A; Collector Emitter Saturation Voltage Vce(on): 2V; Power Dissipation Pd: 140W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3P
Igbt, Single, 600V, 42A, To-247; Continuous Collector Current:42A; Collector Emitter Saturation Voltage:2V; Power Dissipation:140W; Collector Emitter Voltage Max:600V; No. Of Pins:3Pins; Operating Temperature Max:150°C Rohs Compliant: Yes |Stmicroelectronics STGW19NC60HD
The three parts on the right have similar specifications to STGW19NC60HD.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeContact PlatingMountMounting TypePackage / CaseTransistor Element MaterialOperating TemperaturePackagingSeriesPart StatusMoisture Sensitivity Level (MSL)Number of TerminationsECCN CodeSubcategoryMax Power DissipationBase Part NumberPin CountJESD-30 CodeNumber of ElementsElement ConfigurationInput TypeTurn On Delay TimePower - MaxTransistor ApplicationPolarity/Channel TypeTurn-Off Delay TimeCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeJEDEC-95 CodeCollector Emitter Breakdown VoltageTurn On TimeTest ConditionVce(on) (Max) @ Vge, IcTurn Off Time-Nom (toff)Gate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyGate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxRadiation HardeningRoHS StatusLead FreeVoltage - Collector Emitter Breakdown (Max)Current - Collector (Ic) (Max)IGBT TypePower DissipationCollector Emitter Saturation VoltageNumber of PinsWeightJESD-609 CodeTerminal FinishAdditional FeatureVoltage - Rated DCCurrent RatingRise TimeContinuous Collector CurrentHeightWidthLengthREACH SVHCView Compare
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STGW19NC60HDACTIVE (Last Updated: 8 months ago)8 WeeksTinThrough HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubePowerMESH™Active1 (Unlimited)3EAR99Insulated Gate BIP Transistors140WSTGW193R-PSFM-T31SingleStandard25 ns140WPOWER CONTROLN-CHANNEL144 ns600V42A31 nsTO-247AC600V32 ns390V, 12A, 10 Ω, 15V2.5V @ 15V, 12A272 ns53nC60A25ns/97ns85μJ (on), 189μJ (off)20V5.75VNoROHS3 CompliantLead Free-------------------
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ACTIVE (Last Updated: 8 months ago)30 Weeks--Through HoleTO-247-3--55°C~175°C TJTubeMActive1 (Unlimited)----STGW10----Standard-115W-----96ns---400V, 10A, 22 Ω, 15V2V @ 15V, 10A-28nC40A19ns/91ns120μJ (on), 270μJ (off)---ROHS3 Compliant-650V20ATrench Field Stop---------------
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---Through HoleThrough HoleTO-247-3--40°C~175°C TJTube-ObsoleteNot Applicable-EAR99-260WSTGW30---SingleStandard-----600V60A110 ns-600V-400V, 30A, 10 Ω, 15V2.4V @ 15V, 30A-105nC120A50ns/160ns350μJ (on), 400μJ (off)--NoROHS3 Compliant---Trench Field Stop260W2.4V-------------
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ACTIVE (Last Updated: 8 months ago)8 Weeks-Through HoleThrough HoleTO-247-3SILICON-55°C~150°C TJTubePowerMESH™Active1 (Unlimited)3EAR99Insulated Gate BIP Transistors200WSTGW203-1SingleStandard31 ns-POWER CONTROLN-CHANNEL100 ns600V60A44ns-600V42.5 ns390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A280 ns100nC150A31ns/100ns220μJ (on), 330μJ (off)20V5.75VNoROHS3 CompliantLead Free---200W2.5V338.000013ge3Tin (Sn)ULTRA FAST600V30A11.5ns30A20.15mm5.15mm15.75mmNo SVHC
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