STGW30M65DF2

STMicroelectronics STGW30M65DF2

Part Number:
STGW30M65DF2
Manufacturer:
STMicroelectronics
Ventron No:
2854793-STGW30M65DF2
Description:
TRENCH GATE FIELD-STOP IGBT M SE
ECAD Model:
Datasheet:
STGW30M65DF2

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STGW30M65DF2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30M65DF2.
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Factory Lead Time
    30 Weeks
  • Mount
    Through Hole
  • Mounting Type
    Through Hole
  • Package / Case
    TO-247-3
  • Operating Temperature
    -55°C~175°C TJ
  • Packaging
    Tube
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • ECCN Code
    EAR99
  • Max Power Dissipation
    258W
  • Peak Reflow Temperature (Cel)
    NOT SPECIFIED
  • Time@Peak Reflow Temperature-Max (s)
    NOT SPECIFIED
  • Base Part Number
    STGW30
  • Input Type
    Standard
  • Power - Max
    258W
  • Collector Emitter Voltage (VCEO)
    2V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    140 ns
  • Collector Emitter Breakdown Voltage
    650V
  • Test Condition
    400V, 30A, 10 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2V @ 15V, 30A
  • IGBT Type
    Trench Field Stop
  • Gate Charge
    80nC
  • Current - Collector Pulsed (Icm)
    120A
  • Td (on/off) @ 25°C
    31.6ns/115ns
  • Switching Energy
    300μJ (on), 960μJ (off)
  • RoHS Status
    ROHS3 Compliant
Description
STGW30M65DF2                  Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.  
STGW30M65DF2                   Features
· 6 μs of minimum short-circuit withstand time · VCE(sat) = 1.55 V (typ.) @ IC = 30 A · Tight parameters distribution · Safer paralleling · Low thermal resistance · Soft and very fast recovery antiparallel diode
STGW30M65DF2                    Applications
· Motor control · UPS · PFC

STGW30M65DF2 More Descriptions
Trench gate field-stop IGBT M series, 650 V 30 A low loss
SRWG Series 650 V 60 A 258 W Through Hole IGBT Trench Field Stop - TO-247-3
TRANSISTOR, IGBT, 650V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:258W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
Product Comparison
The three parts on the right have similar specifications to STGW30M65DF2.
  • Image
    Part Number
    Manufacturer
    Lifecycle Status
    Factory Lead Time
    Mount
    Mounting Type
    Package / Case
    Operating Temperature
    Packaging
    Part Status
    Moisture Sensitivity Level (MSL)
    ECCN Code
    Max Power Dissipation
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    Base Part Number
    Input Type
    Power - Max
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    IGBT Type
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    RoHS Status
    Number of Pins
    Element Configuration
    Power Dissipation
    Collector Emitter Saturation Voltage
    Height
    Length
    Width
    Radiation Hardening
    Lead Free
    Weight
    Transistor Element Material
    Series
    JESD-609 Code
    Number of Terminations
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Current Rating
    Pin Count
    Number of Elements
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Turn On Time
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    REACH SVHC
    Pbfree Code
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    JEDEC-95 Code
    Input Capacitance
    View Compare
  • STGW30M65DF2
    STGW30M65DF2
    ACTIVE (Last Updated: 8 months ago)
    30 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    258W
    NOT SPECIFIED
    NOT SPECIFIED
    STGW30
    Standard
    258W
    2V
    60A
    140 ns
    650V
    400V, 30A, 10 Ω, 15V
    2V @ 15V, 30A
    Trench Field Stop
    80nC
    120A
    31.6ns/115ns
    300μJ (on), 960μJ (off)
    ROHS3 Compliant
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40V60DF
    -
    20 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~175°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    283W
    -
    -
    STGW40
    Standard
    -
    600V
    80A
    41ns
    600V
    400V, 40A, 10 Ω, 15V
    2.3V @ 15V, 40A
    Trench Field Stop
    226nC
    160A
    52ns/208ns
    456μJ (on), 411μJ (off)
    ROHS3 Compliant
    3
    Single
    283W
    2.35V
    20.15mm
    15.75mm
    5.15mm
    No
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW20NC60VD
    ACTIVE (Last Updated: 8 months ago)
    8 Weeks
    Through Hole
    Through Hole
    TO-247-3
    -55°C~150°C TJ
    Tube
    Active
    1 (Unlimited)
    EAR99
    200W
    -
    -
    STGW20
    Standard
    -
    600V
    60A
    44ns
    600V
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    -
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    ROHS3 Compliant
    3
    Single
    200W
    2.5V
    20.15mm
    15.75mm
    5.15mm
    No
    Lead Free
    38.000013g
    SILICON
    PowerMESH™
    e3
    3
    Tin (Sn)
    ULTRA FAST
    Insulated Gate BIP Transistors
    600V
    30A
    3
    1
    31 ns
    POWER CONTROL
    11.5ns
    N-CHANNEL
    100 ns
    42.5 ns
    30A
    280 ns
    20V
    5.75V
    No SVHC
    -
    -
    -
    -
    -
  • STGW40NC60WD
    -
    -
    Through Hole
    Through Hole
    TO-247-3
    -55°C~150°C TJ
    Tube
    Obsolete
    1 (Unlimited)
    EAR99
    250W
    -
    -
    STGW40
    Standard
    -
    600V
    70A
    45 ns
    600V
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    -
    126nC
    230A
    33ns/168ns
    302μJ (on), 349μJ (off)
    ROHS3 Compliant
    3
    Single
    250W
    2.1V
    20.15mm
    15.75mm
    5.15mm
    No
    Lead Free
    38.000013g
    SILICON
    PowerMESH™
    e3
    3
    Tin (Sn)
    -
    Insulated Gate BIP Transistors
    600V
    40A
    3
    1
    33 ns
    POWER CONTROL
    12ns
    N-CHANNEL
    168 ns
    46 ns
    40A
    280 ns
    20V
    5.75V
    No SVHC
    yes
    650V
    40A
    TO-247AC
    2.9nF
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.