STMicroelectronics STGW30M65DF2
- Part Number:
- STGW30M65DF2
- Manufacturer:
- STMicroelectronics
- Ventron No:
- 2854793-STGW30M65DF2
- Description:
- TRENCH GATE FIELD-STOP IGBT M SE
- Datasheet:
- STGW30M65DF2
STMicroelectronics STGW30M65DF2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW30M65DF2.
- Lifecycle StatusACTIVE (Last Updated: 8 months ago)
- Factory Lead Time30 Weeks
- MountThrough Hole
- Mounting TypeThrough Hole
- Package / CaseTO-247-3
- Operating Temperature-55°C~175°C TJ
- PackagingTube
- Part StatusActive
- Moisture Sensitivity Level (MSL)1 (Unlimited)
- ECCN CodeEAR99
- Max Power Dissipation258W
- Peak Reflow Temperature (Cel)NOT SPECIFIED
- Time@Peak Reflow Temperature-Max (s)NOT SPECIFIED
- Base Part NumberSTGW30
- Input TypeStandard
- Power - Max258W
- Collector Emitter Voltage (VCEO)2V
- Max Collector Current60A
- Reverse Recovery Time140 ns
- Collector Emitter Breakdown Voltage650V
- Test Condition400V, 30A, 10 Ω, 15V
- Vce(on) (Max) @ Vge, Ic2V @ 15V, 30A
- IGBT TypeTrench Field Stop
- Gate Charge80nC
- Current - Collector Pulsed (Icm)120A
- Td (on/off) @ 25°C31.6ns/115ns
- Switching Energy300μJ (on), 960μJ (off)
- RoHS StatusROHS3 Compliant
STGW30M65DF2 Description
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STGW30M65DF2 Features
· 6 μs of minimum short-circuit withstand time · VCE(sat) = 1.55 V (typ.) @ IC = 30 A · Tight parameters distribution · Safer paralleling · Low thermal resistance · Soft and very fast recovery antiparallel diode
STGW30M65DF2 Applications
· Motor control · UPS · PFC
These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. The devices are part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where low-loss and short-circuit functionality are essential. Furthermore, the positive VCE(sat) temperature coefficient and tight parameter distribution result in safer paralleling operation.
STGW30M65DF2 Features
· 6 μs of minimum short-circuit withstand time · VCE(sat) = 1.55 V (typ.) @ IC = 30 A · Tight parameters distribution · Safer paralleling · Low thermal resistance · Soft and very fast recovery antiparallel diode
STGW30M65DF2 Applications
· Motor control · UPS · PFC
STGW30M65DF2 More Descriptions
Trench gate field-stop IGBT M series, 650 V 30 A low loss
SRWG Series 650 V 60 A 258 W Through Hole IGBT Trench Field Stop - TO-247-3
TRANSISTOR, IGBT, 650V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:258W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
SRWG Series 650 V 60 A 258 W Through Hole IGBT Trench Field Stop - TO-247-3
TRANSISTOR, IGBT, 650V, 60A, TO-247; Continuous Collector Current:60A; Collector Emitter Saturation Voltage:1.55V; Power Dissipation:258W; Collector Emitter Voltage Max:650V; No. of Pins:3Pins; Operating Temperature Max:175°C RoHS Compliant: Yes
The three parts on the right have similar specifications to STGW30M65DF2.
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ImagePart NumberManufacturerLifecycle StatusFactory Lead TimeMountMounting TypePackage / CaseOperating TemperaturePackagingPart StatusMoisture Sensitivity Level (MSL)ECCN CodeMax Power DissipationPeak Reflow Temperature (Cel)Time@Peak Reflow Temperature-Max (s)Base Part NumberInput TypePower - MaxCollector Emitter Voltage (VCEO)Max Collector CurrentReverse Recovery TimeCollector Emitter Breakdown VoltageTest ConditionVce(on) (Max) @ Vge, IcIGBT TypeGate ChargeCurrent - Collector Pulsed (Icm)Td (on/off) @ 25°CSwitching EnergyRoHS StatusNumber of PinsElement ConfigurationPower DissipationCollector Emitter Saturation VoltageHeightLengthWidthRadiation HardeningLead FreeWeightTransistor Element MaterialSeriesJESD-609 CodeNumber of TerminationsTerminal FinishAdditional FeatureSubcategoryVoltage - Rated DCCurrent RatingPin CountNumber of ElementsTurn On Delay TimeTransistor ApplicationRise TimePolarity/Channel TypeTurn-Off Delay TimeTurn On TimeContinuous Collector CurrentTurn Off Time-Nom (toff)Gate-Emitter Voltage-MaxGate-Emitter Thr Voltage-MaxREACH SVHCPbfree CodeDrain to Source Voltage (Vdss)Continuous Drain Current (ID)JEDEC-95 CodeInput CapacitanceView Compare
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STGW30M65DF2ACTIVE (Last Updated: 8 months ago)30 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeActive1 (Unlimited)EAR99258WNOT SPECIFIEDNOT SPECIFIEDSTGW30Standard258W2V60A140 ns650V400V, 30A, 10 Ω, 15V2V @ 15V, 30ATrench Field Stop80nC120A31.6ns/115ns300μJ (on), 960μJ (off)ROHS3 Compliant--------------------------------------
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-20 WeeksThrough HoleThrough HoleTO-247-3-55°C~175°C TJTubeActive1 (Unlimited)EAR99283W--STGW40Standard-600V80A41ns600V400V, 40A, 10 Ω, 15V2.3V @ 15V, 40ATrench Field Stop226nC160A52ns/208ns456μJ (on), 411μJ (off)ROHS3 Compliant3Single283W2.35V20.15mm15.75mm5.15mmNoLead Free----------------------------
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ACTIVE (Last Updated: 8 months ago)8 WeeksThrough HoleThrough HoleTO-247-3-55°C~150°C TJTubeActive1 (Unlimited)EAR99200W--STGW20Standard-600V60A44ns600V390V, 20A, 3.3 Ω, 15V2.5V @ 15V, 20A-100nC150A31ns/100ns220μJ (on), 330μJ (off)ROHS3 Compliant3Single200W2.5V20.15mm15.75mm5.15mmNoLead Free38.000013gSILICONPowerMESH™e33Tin (Sn)ULTRA FASTInsulated Gate BIP Transistors600V30A3131 nsPOWER CONTROL11.5nsN-CHANNEL100 ns42.5 ns30A280 ns20V5.75VNo SVHC-----
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--Through HoleThrough HoleTO-247-3-55°C~150°C TJTubeObsolete1 (Unlimited)EAR99250W--STGW40Standard-600V70A45 ns600V390V, 30A, 10 Ω, 15V2.5V @ 15V, 30A-126nC230A33ns/168ns302μJ (on), 349μJ (off)ROHS3 Compliant3Single250W2.1V20.15mm15.75mm5.15mmNoLead Free38.000013gSILICONPowerMESH™e33Tin (Sn)-Insulated Gate BIP Transistors600V40A3133 nsPOWER CONTROL12nsN-CHANNEL168 ns46 ns40A280 ns20V5.75VNo SVHCyes650V40ATO-247AC2.9nF
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