Home > Products > Discrete Semiconductor Products > Transistors - IGBTs - Single > STGW20NC60VD
STGW20NC60VD

STMicroelectronics STGW20NC60VD

Part Number:
STGW20NC60VD
Manufacturer:
STMicroelectronics
Ventron No:
2854615-STGW20NC60VD
Description:
IGBT 600V 60A 200W TO247
ECAD Model:
Datasheet:
STGW20NC60VD

Quick Request Quote

Please send RFQ , We will respond immediately.

Part Number
Quantity
Company
E-mail
Phone
Comments
Specifications
STMicroelectronics STGW20NC60VD technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW20NC60VD.
  • Factory Lead Time
    8 Weeks
  • Lifecycle Status
    ACTIVE (Last Updated: 8 months ago)
  • Package / Case
    TO-247-3
  • Mounting Type
    Through Hole
  • Mount
    Through Hole
  • Number of Pins
    3
  • Weight
    38.000013g
  • Transistor Element Material
    SILICON
  • Series
    PowerMESH™
  • Packaging
    Tube
  • Operating Temperature
    -55°C~150°C TJ
  • JESD-609 Code
    e3
  • Part Status
    Active
  • Moisture Sensitivity Level (MSL)
    1 (Unlimited)
  • Number of Terminations
    3
  • ECCN Code
    EAR99
  • Terminal Finish
    Tin (Sn)
  • Additional Feature
    ULTRA FAST
  • Subcategory
    Insulated Gate BIP Transistors
  • Voltage - Rated DC
    600V
  • Max Power Dissipation
    200W
  • Current Rating
    30A
  • Base Part Number
    STGW20
  • Pin Count
    3
  • Number of Elements
    1
  • Element Configuration
    Single
  • Power Dissipation
    200W
  • Input Type
    Standard
  • Turn On Delay Time
    31 ns
  • Transistor Application
    POWER CONTROL
  • Rise Time
    11.5ns
  • Polarity/Channel Type
    N-CHANNEL
  • Turn-Off Delay Time
    100 ns
  • Collector Emitter Voltage (VCEO)
    600V
  • Max Collector Current
    60A
  • Reverse Recovery Time
    44ns
  • Collector Emitter Breakdown Voltage
    600V
  • Collector Emitter Saturation Voltage
    2.5V
  • Turn On Time
    42.5 ns
  • Test Condition
    390V, 20A, 3.3 Ω, 15V
  • Vce(on) (Max) @ Vge, Ic
    2.5V @ 15V, 20A
  • Continuous Collector Current
    30A
  • Turn Off Time-Nom (toff)
    280 ns
  • Gate Charge
    100nC
  • Current - Collector Pulsed (Icm)
    150A
  • Td (on/off) @ 25°C
    31ns/100ns
  • Switching Energy
    220μJ (on), 330μJ (off)
  • Gate-Emitter Voltage-Max
    20V
  • Gate-Emitter Thr Voltage-Max
    5.75V
  • Height
    20.15mm
  • Width
    5.15mm
  • Length
    15.75mm
  • RoHS Status
    ROHS3 Compliant
  • Radiation Hardening
    No
  • REACH SVHC
    No SVHC
  • Lead Free
    Lead Free
Description
Description
The STGW20NC60VD is a 30 A, 600 V, very fast IGBT. This IGBT makes excellent use of the cutting-edge Power MESHTM technology to balance switching performance and minimal on-state behavior. The insulated-gate bipolar transistor is referred to as IGBT. It has an insulated gate terminal and is a bipolar transistor. The IGBT combines a control input with a MOS structure and a bipolar power transistor that serves as an output switch in a single piece of hardware.

Features
Very soft ultra fast recovery antiparallel diode
High current capability
High frequency operation up to 50 kHz
Very low on-state voltage drop
Superior on-state current density

Applications
Motor drive
SMPS and PFC in both hard switch and resonant topologies
High frequency inverters, UPS
Solar inverters
Chopper and inverters
STGW20NC60VD More Descriptions
Trans IGBT Chip N-CH 600V 60A 200000mW 3-Pin(3 Tab) TO-247 Tube
STMICROELECTRONICS STGW20NC60VD IGBT Single Transistor, 60 A, 2.5 V, 200 W, 600 V, TO-247, 3 Pins
Insulated Gate Bipolar Transistor, 60A I(C), 600V V(BR)CES, N-Channel, TO-247
IGBTs Insulated Gate Bipolar Transistor N-Ch 600 Volt 30 Amp
Transistor IGBT N-Ch 600V 60A TO247
IGBT, 600V, 20A, TO-247; DC Collector Current: 60A; Collector Emitter Saturation Voltage Vce(on): 2.5V; Power Dissipation Pd: 200W; Collector Emitter Voltage V(br)ceo: 600V; Transistor Case Style: TO-247; No. of Pins: 3Pins; O
CoC and 2-years warranty / RFQ for pricing
French Electronic Distributor since 1988
200W 60A 600V TO-247AC-3 IGBTs ROHS
Product Comparison
The three parts on the right have similar specifications to STGW20NC60VD.
  • Image
    Part Number
    Manufacturer
    Factory Lead Time
    Lifecycle Status
    Package / Case
    Mounting Type
    Mount
    Number of Pins
    Weight
    Transistor Element Material
    Series
    Packaging
    Operating Temperature
    JESD-609 Code
    Part Status
    Moisture Sensitivity Level (MSL)
    Number of Terminations
    ECCN Code
    Terminal Finish
    Additional Feature
    Subcategory
    Voltage - Rated DC
    Max Power Dissipation
    Current Rating
    Base Part Number
    Pin Count
    Number of Elements
    Element Configuration
    Power Dissipation
    Input Type
    Turn On Delay Time
    Transistor Application
    Rise Time
    Polarity/Channel Type
    Turn-Off Delay Time
    Collector Emitter Voltage (VCEO)
    Max Collector Current
    Reverse Recovery Time
    Collector Emitter Breakdown Voltage
    Collector Emitter Saturation Voltage
    Turn On Time
    Test Condition
    Vce(on) (Max) @ Vge, Ic
    Continuous Collector Current
    Turn Off Time-Nom (toff)
    Gate Charge
    Current - Collector Pulsed (Icm)
    Td (on/off) @ 25°C
    Switching Energy
    Gate-Emitter Voltage-Max
    Gate-Emitter Thr Voltage-Max
    Height
    Width
    Length
    RoHS Status
    Radiation Hardening
    REACH SVHC
    Lead Free
    Terminal Position
    Peak Reflow Temperature (Cel)
    Time@Peak Reflow Temperature-Max (s)
    JESD-30 Code
    Configuration
    Case Connection
    Power - Max
    Voltage - Collector Emitter Breakdown (Max)
    IGBT Type
    Contact Plating
    JEDEC-95 Code
    Pbfree Code
    Drain to Source Voltage (Vdss)
    Continuous Drain Current (ID)
    Input Capacitance
    View Compare
  • STGW20NC60VD
    STGW20NC60VD
    STMicroelectronics
    8 Weeks
    ACTIVE (Last Updated: 8 months ago)
    TO-247-3
    Through Hole
    Through Hole
    3
    38.000013g
    SILICON
    PowerMESH™
    Tube
    -55°C~150°C TJ
    e3
    Active
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    ULTRA FAST
    Insulated Gate BIP Transistors
    600V
    200W
    30A
    STGW20
    3
    1
    Single
    200W
    Standard
    31 ns
    POWER CONTROL
    11.5ns
    N-CHANNEL
    100 ns
    600V
    60A
    44ns
    600V
    2.5V
    42.5 ns
    390V, 20A, 3.3 Ω, 15V
    2.5V @ 15V, 20A
    30A
    280 ns
    100nC
    150A
    31ns/100ns
    220μJ (on), 330μJ (off)
    20V
    5.75V
    20.15mm
    5.15mm
    15.75mm
    ROHS3 Compliant
    No
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
  • STGW40S120DF3
    STGW40S120DF3
    STMicroelectronics
    41 Weeks
    -
    TO-247-3
    Through Hole
    Surface Mount
    -
    -
    SILICON
    -
    Tube
    -55°C~175°C TJ
    -
    Active
    Not Applicable
    3
    EAR99
    -
    -
    -
    -
    468W
    -
    STGW40
    -
    1
    -
    -
    Standard
    -
    POWER CONTROL
    -
    N-CHANNEL
    -
    2.15V
    80A
    355 ns
    1.2kV
    -
    50 ns
    600V, 40A, 15 Ω, 15V
    2.15V @ 15V, 40A
    -
    158.46 ns
    129nC
    160A
    35ns/148ns
    1.43mJ (on), 3.83mJ (off)
    -
    -
    -
    -
    -
    ROHS3 Compliant
    -
    No SVHC
    -
    SINGLE
    NOT SPECIFIED
    NOT SPECIFIED
    R-PSFM-T3
    SINGLE WITH BUILT-IN DIODE
    COLLECTOR
    468W
    1200V
    Trench Field Stop
    -
    -
    -
    -
    -
    -
    STGW20NC60VD vs STGW40S120DF3
  • STGW19NC60HD
    STGW19NC60HD
    STMicroelectronics
    8 Weeks
    ACTIVE (Last Updated: 8 months ago)
    TO-247-3
    Through Hole
    Through Hole
    -
    -
    SILICON
    PowerMESH™
    Tube
    -55°C~150°C TJ
    -
    Active
    1 (Unlimited)
    3
    EAR99
    -
    -
    Insulated Gate BIP Transistors
    -
    140W
    -
    STGW19
    3
    1
    Single
    -
    Standard
    25 ns
    POWER CONTROL
    -
    N-CHANNEL
    144 ns
    600V
    42A
    31 ns
    600V
    -
    32 ns
    390V, 12A, 10 Ω, 15V
    2.5V @ 15V, 12A
    -
    272 ns
    53nC
    60A
    25ns/97ns
    85μJ (on), 189μJ (off)
    20V
    5.75V
    -
    -
    -
    ROHS3 Compliant
    No
    -
    Lead Free
    -
    -
    -
    R-PSFM-T3
    -
    -
    140W
    -
    -
    Tin
    TO-247AC
    -
    -
    -
    -
    STGW20NC60VD vs STGW19NC60HD
  • STGW40NC60WD
    STGW40NC60WD
    STMicroelectronics
    -
    -
    TO-247-3
    Through Hole
    Through Hole
    3
    38.000013g
    SILICON
    PowerMESH™
    Tube
    -55°C~150°C TJ
    e3
    Obsolete
    1 (Unlimited)
    3
    EAR99
    Tin (Sn)
    -
    Insulated Gate BIP Transistors
    600V
    250W
    40A
    STGW40
    3
    1
    Single
    250W
    Standard
    33 ns
    POWER CONTROL
    12ns
    N-CHANNEL
    168 ns
    600V
    70A
    45 ns
    600V
    2.1V
    46 ns
    390V, 30A, 10 Ω, 15V
    2.5V @ 15V, 30A
    40A
    280 ns
    126nC
    230A
    33ns/168ns
    302μJ (on), 349μJ (off)
    20V
    5.75V
    20.15mm
    5.15mm
    15.75mm
    ROHS3 Compliant
    No
    No SVHC
    Lead Free
    -
    -
    -
    -
    -
    -
    -
    -
    -
    -
    TO-247AC
    yes
    650V
    40A
    2.9nF
    STGW20NC60VD vs STGW40NC60WD
Certification
  • ISO 9001
  • ISO 13485
  • ISO 45001
  • ASA
  • ESD
  • DUNS
  • SMTA
  • ROHS
Related parts for STGW20NC60VD
Popular Search Part Number Related Keywords Search Tags

Latest News

  • cost

    Help you to save your cost and time.

  • package

    Reliable package for your goods.

  • fast

    Fast Reliable Delivery to save time.

  • service

    Quality premium after-sale service.