STMicroelectronics STGW10M65DF2

Name: STGW10M65DF2
Brand: STMicroelectronics
SKU: 2854708-STGW10M65DF2
Availability: InStock
Rating: 5 (1 reviews)

Part Number:: STGW10M65DF2

Manufacturer:: STMicroelectronics

Ventron No:: 2854708-STGW10M65DF2

Description:: TRENCH GATE FIELD-STOP IGBT M SE

ECAD Model:

Datasheet:: STGW10M65DF2

Specifications

STMicroelectronics STGW10M65DF2 technical specifications, attributes, parameters and parts with similar specifications to STMicroelectronics STGW10M65DF2.

Lifecycle Status
ACTIVE (Last Updated: 8 months ago)
Factory Lead Time
30 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Series
M
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
STGW10
Input Type
Standard
Power - Max
115W
Reverse Recovery Time
96ns
Voltage - Collector Emitter Breakdown (Max)
650V
Current - Collector (Ic) (Max)
20A
Test Condition
400V, 10A, 22 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 10A
IGBT Type
Trench Field Stop
Gate Charge
28nC
Current - Collector Pulsed (Icm)
40A
Td (on/off) @ 25°C
19ns/91ns
Switching Energy
120μJ (on), 270μJ (off)
RoHS Status
ROHS3 Compliant

Description

STGW10M65DF2 Overview
This product is manufactured by STMicroelectronics and belongs to the category of Transistors - IGBTs - Single. The images we provide are for reference only, for detailed product information please see specification sheet STGW10M65DF2 or the datasheet in PDF format. As a professional electronic components distributor, Ventron has five million electronic components available. Additionally, we have over 500,000 electronic components in stock ready for immediate shipment. If you have requirements, you can send us a quotation form to get the price of STGW10M65DF2. We attach great importance to our customers' purchasing experience and are willing to establish a long-term cooperative relationship with you. If you have any questions or requirements, please feel free to contact us.

STGW10M65DF2 More Descriptions

Cap Ceramic 220pF 50V C0G 5% SMD 0805 125°C Punched Paper T/R
Trench gate field-stop IGBT M series, 650 V 10 A low loss
Trans IGBT Chip N 650V 20A 3-Pin TO-247 Tube
Igbt |Stmicroelectronics STGW10M65DF2
IGBT Transistors PTD HIGH VOLTAGE
TRENCH GATE FIELD-STOP IGBT M SE

Product Comparison

The three parts on the right have similar specifications to STGW10M65DF2.

Image

Part Number

Manufacturer

Lifecycle Status

Factory Lead Time

Mounting Type

Package / Case

Operating Temperature

Packaging

Series

Part Status

Moisture Sensitivity Level (MSL)

Base Part Number

Input Type

Power - Max

Reverse Recovery Time

Voltage - Collector Emitter Breakdown (Max)

Current - Collector (Ic) (Max)

Test Condition

Vce(on) (Max) @ Vge, Ic

IGBT Type

Gate Charge

Current - Collector Pulsed (Icm)

Td (on/off) @ 25°C

Switching Energy

RoHS Status

Mount

ECCN Code

Max Power Dissipation

Element Configuration

Power Dissipation

Collector Emitter Voltage (VCEO)

Max Collector Current

Collector Emitter Breakdown Voltage

Collector Emitter Saturation Voltage

Radiation Hardening

Number of Pins

Weight

Transistor Element Material

JESD-609 Code

Number of Terminations

Terminal Finish

Additional Feature

Subcategory

Voltage - Rated DC

Current Rating

Pin Count

Number of Elements

Turn On Delay Time

Transistor Application

Rise Time

Polarity/Channel Type

Turn-Off Delay Time

Turn On Time

Continuous Collector Current

Turn Off Time-Nom (toff)

Gate-Emitter Voltage-Max

Gate-Emitter Thr Voltage-Max

Height

Width

Length

REACH SVHC

Lead Free

Pbfree Code

Drain to Source Voltage (Vdss)

Continuous Drain Current (ID)

JEDEC-95 Code

Input Capacitance

View Compare
STGW10M65DF2

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

30 Weeks

Through Hole

TO-247-3

-55°C~175°C TJ

Tube

M

Active

1 (Unlimited)

STGW10

Standard

115W

96ns

650V

20A

400V, 10A, 22 Ω, 15V

2V @ 15V, 10A

Trench Field Stop

28nC

40A

19ns/91ns

120μJ (on), 270μJ (off)

ROHS3 Compliant

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-
STGW30H60DF

STMicroelectronics

-

-

Through Hole

TO-247-3

-40°C~175°C TJ

Tube

-

Obsolete

Not Applicable

STGW30

Standard

-

110 ns

-

-

400V, 30A, 10 Ω, 15V

2.4V @ 15V, 30A

Trench Field Stop

105nC

120A

50ns/160ns

350μJ (on), 400μJ (off)

ROHS3 Compliant

Through Hole

EAR99

260W

Single

260W

600V

60A

600V

2.4V

No

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

STGW10M65DF2 vs STGW30H60DF
STGW20NC60VD

STMicroelectronics

ACTIVE (Last Updated: 8 months ago)

8 Weeks

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

PowerMESH™

Active

1 (Unlimited)

STGW20

Standard

-

44ns

-

-

390V, 20A, 3.3 Ω, 15V

2.5V @ 15V, 20A

-

100nC

150A

31ns/100ns

220μJ (on), 330μJ (off)

ROHS3 Compliant

Through Hole

EAR99

200W

Single

200W

600V

60A

600V

2.5V

No

3

38.000013g

SILICON

e3

3

Tin (Sn)

ULTRA FAST

Insulated Gate BIP Transistors

600V

30A

3

1

31 ns

POWER CONTROL

11.5ns

N-CHANNEL

100 ns

42.5 ns

30A

280 ns

20V

5.75V

20.15mm

5.15mm

15.75mm

No SVHC

Lead Free

-

-

-

-

-

STGW10M65DF2 vs STGW20NC60VD
STGW40NC60WD

STMicroelectronics

-

-

Through Hole

TO-247-3

-55°C~150°C TJ

Tube

PowerMESH™

Obsolete

1 (Unlimited)

STGW40

Standard

-

45 ns

-

-

390V, 30A, 10 Ω, 15V

2.5V @ 15V, 30A

-

126nC

230A

33ns/168ns

302μJ (on), 349μJ (off)

ROHS3 Compliant

Through Hole

EAR99

250W

Single

250W

600V

70A

600V

2.1V

No

3

38.000013g

SILICON

e3

3

Tin (Sn)

-

Insulated Gate BIP Transistors

600V

40A

3

1

33 ns

POWER CONTROL

12ns

N-CHANNEL

168 ns

46 ns

40A

280 ns

20V

5.75V

20.15mm

5.15mm

15.75mm

No SVHC

Lead Free

yes

650V

40A

TO-247AC

2.9nF

STGW10M65DF2 vs STGW40NC60WD